Abstract: A device and a method for robotic arm automatic correction are disclosed. A main structure includes a robotic arm including an optical photographing mechanism, and a wafer storage mechanism at one side of the robotic arm and including a graphic data code. The optical photographing mechanism is in information connection with an optical recognition module that includes a data code analysis unit, an object distance analysis unit, and a wafer center analysis unit. A user uses the optical photographing mechanism to photograph the graphic data code for implementing a first round of position correction for the robotic arm. Then, the optical photographing mechanism photographs a wafer and performs an operation of focusing for calculation of a distance between the robotic arm and a center point of the wafer by means of the object distance analysis unit in combination with the wafer center analysis unit for a second round of correction.

Abstract: Disclosed in a robotic arm with vibration detection and image recognition, of which a main structure includes a wafer transportation device, a robotic arm rotatably mounted on the wafer transportation device, an image acquiring device arranged on the robotic arm, at least one first vibration detector arranged on the robotic arm, a second vibration detector arranged in an interior of the wafer transportation device, and a monitoring device arranged at one side of the wafer transportation device. The monitoring device includes a status inspecting part in information connection with the image acquiring device and a vibration inspecting part in information connection with the first vibration detector and the second vibration detector. By means of the above structure, the robotic arm is additionally provided with functions of wafer storage status inspecting, impact sensing, and lifespan predicting, so as to prevent mutual influence between machine structure operation instability and inspection error.

Abstract: Disclosed herein is novel double-stranded short interfering ribonucleic acid (siRNA) capable of suppressing the translation of Aurora-A mRNA. Also disclosed are use of the novel siRNA as disclosed herein for manufacturing a medicament suitable for treating a cancer, which is mediated through epidermal growth factor receptor (EGFR) signaling. Accordingly, a pharmaceutical composition comprising the disclosed novel siRNA molecules is provided; as well as a method of treating a subject suffering from EGFR-mediated cancer via administering to the subject the disclosed novel siRNA molecule.

Abstract: Disclosed herein is novel double-stranded short interfering ribonucleic acid (siRNA) capable of suppressing the translation of Aurora-A mRNA. Also disclosed are use of the novel siRNA as disclosed herein for manufacturing a medicament suitable for treating a cancer, which is mediated through epidermal growth factor receptor (EGFR) signaling. Accordingly, a pharmaceutical composition comprising the disclosed novel siRNA molecules is provided; as well as a method of treating a subject suffering from EGFR-mediated cancer via administering to the subject the disclosed novel siRNA molecule.

Abstract: A method for patterning an epitaxial substrate includes: (a) forming an etch mask layer over an epitaxial substrate, and patterning the etch mask layer using a patterned cover mask layer to form the etch mask layer into a plurality of spaced apart mask patterns; and (b) etching the epitaxial substrate that is exposed from the mask patterns, and removing the mask patterns such that the epitaxial substrate is formed with a plurality of spaced apart substrate patterns.

Abstract: A light emitting diode (LED) substrate includes a sapphire substrate which is characterized by having a surface consisting of irregular hexagonal pyramid structures, wherein a pitch of the irregular hexagonal pyramid structure is less than 10 ?m. A symmetrical cross-sectional plane of each of the irregular hexagonal pyramid structures has a first base angle and a second base angle, wherein the second base angle is larger than the first base angle, and the second base angle is 50° to 70°. This LED substrate has high light-emitting efficiency.

Abstract: A patterned substrate includes a substrate and a plurality of protrusions. The protrusions are formed on the substrate. Each protrusion has a top face and a base. Each pair of immediately adjacent protrusions is minimally parted by 0 to 0.2 ?m. When the distance between the adjacent protrusions falls as 0 ?m, the bases thereof contact each other. A horizontal and a vertical light emitting diode structures using the patterned substrate are also discussed.

Abstract: A light emitting diode (LED) substrate includes a sapphire substrate which is characterized by having a surface consisting of irregular hexagonal pyramid structures, wherein a pitch of the irregular hexagonal pyramid structure is less than 10 ?m. A symmetrical cross-sectional plane of each of the irregular hexagonal pyramid structures has a first base angle and a second base angle, wherein the second base angle is larger than the first base angle, and the second base angle is 50° to 70°. This LED substrate has high light-emitting efficiency.

Abstract: A light emitting diode (LED) substrate including a sapphire substrate is provided. The sapphire substrate has a surface consisting of a plurality of upper trigonal and lower hexagonal tapers, wherein each of the upper trigonal and lower hexagonal tapers is consisted of a hexagonal taper and a trigonal taper on the hexagonal taper, and a pitch of the upper trigonal and lower hexagonal tapers is less than 10 ?m. This LED substrate has high light-emitting efficiency.

Abstract: A method for patterning an epitaxial substrate includes: (a) forming an etch mask layer over an epitaxial substrate, and patterning the etch mask layer using a patterned cover mask layer to form the etch mask layer into a plurality of spaced apart mask patterns; and (b) etching the epitaxial substrate that is exposed from the mask patterns, and removing the mask patterns such that the epitaxial substrate is formed with a plurality of spaced apart substrate patterns.

Abstract: A patterned sapphire substrate manufacturing method uses two-section dip etching procedure to improve the lateral etching rate at each etching position, so as to produce a concave-convex pattern composed of a plurality of triangular pyramid structures protruded from a surface onto an upper surface of a sapphire substrate, such that less planar area of the sapphire substrate surface will remain, and a mixed solution of sulfuric acid and phosphoric acid is used in a first dip etching step, and pure phosphoric acid or a mixed solution of sulfuric acid and phosphoric acid is used in a second dip etching step for etching the sapphire substrate to control the inclination of each triangular pyramid structure precisely, and providing a better light extraction rate for later manufactured light emitting diodes.

Abstract: A test device for horizontal position of an optical disc drive, comprising a test platform having a plurality of vertical position rods mounted thereon and the rods being of similar horizontal height; and at least a sensor mounted within the area formed by the position rods located on the platform, and including at least an emitting element and a receiving element, the emitting element emitting an optical detection signal (i.e., incident wave) to an optical disc connectedly driven by the motor rotating shaft of a pick-up mechanism to be tested, by means of a reflected optical signal produced by the optical disc, the receiving element receives the signal, and the sensor produces a horizontal height measuring data, and thereby the results and the measured horizontal height data determine whether the motor horizontal position of the optical disc drive pick-up device is parallel to the horizontal axial direction of the optical disc drive pick-up device.