Abstract: The present invention disclosures a critical dimension error analysis method, comprising: S01: performing lithography processes on a wafer, measuring the critical dimension (CD) values of the test points in each of the fields respectively; M and N are integers greater than 1; S02: removing extreme outliers from the critical dimension (CD) values; S03: rebuilding remaining CD values by a reconstruction model fitting method, and obtaining rebuilt critical dimension (CD?) values, according to relative error between CD? and CD, dividing the rebuilt critical dimension (CD?) values into scenes and the number of the scenes is A; S04: calculating components and corresponding residuals of the test points in each of the scenes under a reference system corresponding to a correction model by parameter estimation; S05: modifying machine parameters and masks by the correction model according to above calculation results.

Abstract: Example icon data migration method example electronic device, and example computer-readable storage medium are provided. In one example method, a link establishment request sent by a migration device is obtained, where the link establishment request includes a device type of the migration device, and the device type of the migration device includes a single-screen device or a multi-screen device. Reference icon data of the migration device is obtained based on the device type of the migration device and a device type of a to-be-migrated device after a link is successfully established. Actual icon data is calculated based on the reference icon data and an obtained icon layout of a first display screen. An icon corresponding to the actual icon data is displayed based on the icon layout.

Abstract: A method for treating waste gases containing low-concentration volatile organic compounds (VOCs) based on combination of adsorption and in-situ temperature-varying catalytic ozonation, relating to treatment of organic waste gases. In the method, a VOCs-containing waste gas is fed to an adsorption bed for enrichment, which includes a low-temperature regeneration process and a high-temperature regeneration process. A catalyst with high adsorption capacity and catalytic activity is loaded on the adsorption bed.

Abstract: The present invention disclosures a critical dimension error analysis method, comprising: S01: performing lithography processes on a wafer, measuring the critical dimension (CD) values of the test points in each of the fields respectively; M and N are integers greater than 1; S02: removing extreme outliers from the critical dimension (CD) values; S03: rebuilding remaining CD values by a reconstruction model fitting method, and obtaining rebuilt critical dimension (CD?) values, according to relative error between CD? and CD, dividing the rebuilt critical dimension (CD?) values into scenes and the number of the scenes is A; S04: calculating components and corresponding residuals of the test points in each of the scenes under a reference system corresponding to a correction model by parameter estimation; S05: modifying machine parameters and masks by the correction model according to above calculation results.

Abstract: The disclosed technology is generally directed to virtual machines. In one example of the technology, data associated with a virtual machine configuration request is received. A first virtual machine to be reconfigured is provided. The first virtual machine is booted. The first virtual machine is a system virtual machine, the first virtual machine is re-provisioned into be reconfigured in accordance with the virtual machine configuration request without rebooting the first virtual machine.

Abstract: The disclosed technology is generally directed to virtual machines. In one example of the technology, data associated with a virtual machine configuration request is received. A first virtual machine to be reconfigured is provided. The first virtual machine is booted. The first virtual machine is a system virtual machine, the first virtual machine is re-provisioned into be reconfigured in accordance with the virtual machine configuration request without rebooting the first virtual machine.

Abstract: The disclosed technology is generally directed to virtual machines. In one example of the technology, data associated with a virtual machine configuration request is received. A first virtual machine to be reconfigured is provided. The first virtual machine is booted. The first virtual machine is a system virtual machine, the first virtual machine is re-provisioned into be reconfigured in accordance with the virtual machine configuration request without rebooting the first virtual machine.

Abstract: The disclosed technology is generally directed to virtual machines. In one example of the technology, a first virtual machine executing on a first virtual machine host is reconfigured without rebooting the first virtual machine. The reconfiguring includes controlling the following actions. At least one compute artifact of a plurality of compute artifacts is associated with a first user that is associated with the first virtual machine. At least one compute artifact of the plurality of compute artifacts is modified. A configuration is published to the first virtual machine host.