Abstract: Methods and structures for modulating an inner spacer profile include providing a fin having an epitaxial layer stack including a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes removing the plurality of dummy layers to form a first gap between adjacent semiconductor channel layers of the plurality of semiconductor channel layers. Thereafter, in some examples, the method includes conformally depositing a dielectric layer to substantially fill the first gap between the adjacent semiconductor channel layers. In some cases, the method further includes etching exposed lateral surfaces of the dielectric layer to form an etched-back dielectric layer that defines substantially V-shaped recesses. In some embodiments, the method further includes forming a substantially V-shaped inner spacer within the substantially V-shaped recesses.

Abstract: A semiconductor device includes source/drain regions, a gate structure, a first gate spacer, and a dielectric material. The source/drain regions are over a substrate. The gate structure is laterally between the source/drain regions. The first gate spacer is on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region. The dielectric material is between the first one of the source/drain regions and the void region. The dielectric material has a gradient ratio of a first chemical element to a second chemical element.

Abstract: The present disclosure provides a semiconductor device and a method for forming a semiconductor device. The semiconductor device includes a substrate, and a first gate dielectric stack over the substrate, wherein the first gate dielectric stack includes a first ferroelectric layer, and a first dielectric layer coupled to the first ferroelectric layer, wherein the first ferroelectric layer includes a first portion made of a ferroelectric material in orthorhombic phase, a second portion made of the ferroelectric material in monoclinic phase, and a third portion made of the ferroelectric material in tetragonal phase, wherein a total volume of the second portion is greater than a total volume of the first portion, and the total volume of the first portion is greater than a total volume of the third portion.

Abstract: The present invention is directed to an apparatus and method for IP mobility management for persistent connections. Without affecting the applications on the network domain, it provides for domain hand-off for a mobile node so that the mobile node can maintain the persistent connection. The mobility management apparatus may comprise a Mobility-Aware Socket module (MAS) and one or more mobility management servers. Each mobility management server communicates with a corresponding mobile node. When a mobile node roams from a first network domain to a second network domain, the mobile node and its target mobile nodes execute the MAS module to support the mobility management for persistent connections through their corresponding mobility management servers.

Abstract: The present invention is directed to an apparatus and method for IP mobility management for persistent connections. Without affecting the applications on the network domain, it provides for domain hand-off for a mobile node so that the mobile node can maintain the persistent connection. The mobility management apparatus may comprise a Mobility-Aware Socket module (MAS) and one or more mobility management servers. Each mobility management server communicates with a corresponding mobile node. When a mobile node roams from a first network domain to a second network domain, the mobile node and its target mobile nodes execute the MAS module to support the mobility management for persistent connections through their corresponding mobility management servers.