Abstract: Methods of reshaping ferrules used in optical fiber cables assemblies are disclosed. The reshaping methods reduce a core-to-ferrule concentricity error (E), which improves coupling efficiency and optical transmission. The methods include measuring a true center of the ferrule, wherein the true center is based on an outer surface of the ferrule; and reshaping at least a portion of the ferrule to change the true center of the ferrule, wherein the reshaping includes enlarging a portion of the ferrule. A variety of reshaping techniques are also disclosed.

Abstract: Methods of reshaping ferrules used in optical fiber cables assemblies are disclosed. The reshaping methods reduce a core-to-ferrule concentricity error (E), which improves coupling efficiency and optical transmission. The methods include measuring a true center of the ferrule, wherein the true center is based on an outer surface of the ferrule; and reshaping at least a portion of the ferrule to change the true center of the ferrule, wherein the reshaping includes enlarging a portion of the ferrule. A variety of reshaping techniques are also disclosed.

Abstract: An embodiment of the instant invention is a method of oxidizing a first feature (feature 108 and/or feature 104 of FIG. 1 and feature 314 of FIG. 3) while leaving a second feature substantially unoxidized (features 110 and 112 of FIG. 1 and features 310 and 312 of FIG. 3), the method comprised of subjecting the first and second features to an oxygen-containing gas and a separate hydrogen-containing gas. Preferably, the oxygen-containing gas is comprised of gas selected from the group consisting of O2, N2O, CO2, H2O, and any combination thereof, and the hydrogen-containing gas is comprised of H2. The first feature is, preferably, comprised of polycrystalline silicon, silicon oxide, or a dielectric material, and the second feature is, preferably, comprised of tungsten.

Abstract: An embodiment of the instant invention is a method of fabricating an electronic device formed over a semiconductor substrate and having a conductive feature comprised of tungsten, the method comprising the steps of: forming a nucleation layer over the semiconductor substrate by introducing a combination of WF6, H2 and a plasma; and forming a tungsten layer on the nucleation layer by means of chemical vapor deposition. In an alternative embodiment, an insulating layer is formed on the substrate and situated between the nucleation layer and the substrate. Preferably, this embodiment additionally includes the step of forming a nitrogen-containing layer under the nucleation layer by introducing a combination of WF6, N2, H2, and a plasma. The conductive feature is, preferably, a conductive gate structure, and the insulating layer is, preferably, comprised of: an oxide, a nitride, an insulating material with a dielectric constant substantially higher than that of an oxide, and any combination thereof.

Abstract: An embodiment of the instant invention is a method of fabricating an electronic device formed over a semiconductor substrate and having a conductive feature comprised of tungsten, the method comprising the steps of: forming a nucleation layer over the semiconductor substrate by introducing a combination of WF6, H2 and a plasma; and forming a tungsten layer on the nucleation layer by means of chemical vapor deposition. In an alternative embodiment, an insulating layer is formed on the substrate and situated between the nucleation layer and the substrate. Preferably, this embodiment additionally includes the step of forming a nitrogen-containing layer under the nucleation layer by introducing a combination of WF6, N2, H2, and a plasma. The conductive feature is, preferably, a conductive gate structure, and the insulating layer is, preferably, comprised of: an oxide, a nitride, an insulating material with a dielectric constant substantially higher than that of an oxide, and any combination thereof.