Abstract: Deterioration of yield may be prevented when a contact in a semiconductor device is made by a method including forming a contact hole by selectively removing an insulating layer from a semiconductor substrate, depositing a barrier layer on the insulating layer and on the surface of (or in) the contact hole, depositing an initial tungsten layer on the barrier layer to at least a predetermined thickness, removing particles generated during at least one of the depositing steps, and filling the contact hole with an additional tungsten layer.

Abstract: A semiconductor device may be manufactured by employing an ashing process for removing a photoresist in a process chamber, wherein the ashing process comprises: removing the photoresist for a first predetermined process time by flowing one or more oxygen and nitrogen source gases into the process chamber at first predetermined pressure, power, and temperature conditions; removing a surface portion of a polymer (e.g., from a previous etching process) for a second predetermined process time by flowing a mixture of one or more water source gases (e.g., H2O) and a fluorocarbon (e.g., CF4) into the process chamber at second predetermined pressure, power, and temperature conditions; and removing remaining photoresist for a third predetermined process time by flowing an oxygen source gas (e.g., O2) gas into the process chamber at third predetermined pressure, power, and temperature conditions.

Abstract: Electrical characteristics of a semiconductor device may be enhanced by completely removing a residue such as a polymer formed in a trench when the semiconductor device is manufactured by a method including: forming a via hole and a trench on a semiconductor substrate by an etching process; coating a photoresist on an entire surface of the semiconductor substrate such that the via hole and the trench may be filled thereby; removing a polymer defect in the trench while removing the coated photoresist by a plasma treatment under predetermined process conditions; and performing a wet cleaning process so as to remove a residue of the photoresist.

Abstract: A method for forming a shallow trench isolation layer that includes: forming a pad oxide on a substrate; forming a hard mask silicon nitride on the pad oxide; forming a moat pattern on the pad oxide and hard mask; etching partially the pad oxide and hard mask with the moat pattern to open the silicon nitride; and ashing process for removing the moat pattern.

Abstract: A method for etching an upper metal film of a capacitor, enables a safe etching of the upper metal film of a capacitor by exploiting an over-etch step. The method for etching the upper metal film of the capacitor includes the steps of forming a lower metal film, a lower nitride film, an upper metal film, and an upper nitride film on a substrate having a predetermined device formed thereon, and then forming a pattern thereover; etching the upper nitride film with CHF3, Ar and Cl2 using the pattern; over etching the upper metal film more than 50% with CHF3, Ar and N2 using the pattern; etching the upper metal film with CHF3, Ar and N2 using the pattern; and etching the lower nitride film with CHF3 and Ar using the pattern.

Abstract: A method for finishing a metal line for a semiconductor device is disclosed, in which polymer generated when forming the metal line including aluminum and its alloy is effectively removed and the metal line is prevented from being eroded. A chlorine radical and a chlorine compound remaining on a surface of the metal line are removed using H2O plasma and the polymer is removed using H2O gas and HF gas not plasma. Therefore, it is possible to improve reliability and yield of the semiconductor device.

Abstract: A method of performing a seasoning process for a semiconductor device processing apparatus is provided by the present invention. The method includes: forming a material layer on a test wafer; coating a photoresist on the material layer; patterning the photoresist so as to expose a central region of the wafer and cover an edge region thereof; and etching the material layer exposed by the photoresist pattern.

Abstract: An example method of manufacturing a semiconductor device having a capacitor includes sequentially depositing a lower metal layer, an insulating layer and an upper metal layer on a semiconductor substrate, removing a first photoresist pattern by using O2/N2 plasma, and removing polymer existing on the lower metal layer by using H2O/CF4 plasma. According to one example, the capacitor may include a lower electrode film, the capacitor insulating film and the upper electrode film.

Abstract: A method for fabricating a capacitor using a metal/insulator/metal (MIM) structure is disclosed. An example method for fabricating a capacitor using an MIM structure including a first metal layer, a dielectric layer, and a second metal layer etches the second metal layer and the dielectric layer in order and changes the etching conditions associated with the second metal layer prior to etching the dielectric layer.

Abstract: Electrical characteristics of a semiconductor device may be enhanced by completely removing a residue such as a polymer formed in a trench when the semiconductor device is manufactured by a method including: forming a via hole and a trench on a semiconductor substrate by an etching process; coating a photoresist on an entire surface of the semiconductor substrate such that the via hole and the trench may be filled thereby; removing a polymer defect in the trench while removing the coated photoresist by a plasma treatment under predetermined process conditions; and performing a wet cleaning process so as to remove a residue of the photoresist.

Abstract: A semiconductor device may be manufactured by employing an ashing process for removing a photoresist in a process chamber, wherein the ashing process comprises: removing the photoresist for a first predetermined process time by flowing one or more oxygen and nitrogen source gases into the process chamber at first predetermined pressure, power, and temperature conditions; removing a surface portion of a polymer (e.g., from a previous etching process) for a second predetermined process time by flowing a mixture of one or more water source gases (e.g., H2O) and a fluorocarbon (e.g., CF4) into the process chamber at second predetermined pressure, power, and temperature conditions; and removing remaining photoresist for a third predetermined process time by flowing an oxygen source gas (e.g., O2) gas into the process chamber at third predetermined pressure, power, and temperature conditions.

Abstract: A method of performing a seasoning process for a semiconductor device processing apparatus is provided by the present invention. The method includes: forming a material layer on a test wafer; coating a photoresist on the material layer; patterning the photoresist so as to expose a central region of the wafer and cover an edge region thereof; and etching the material layer exposed by the photoresist pattern.

Abstract: Deterioration of yield may be prevented when a contact in a semiconductor device is made by a method including forming a contact hole by selectively removing an insulating layer from a semiconductor substrate, depositing a barrier layer on the insulating layer and on the surface of (or in) the contact hole, depositing an initial tungsten layer on the barrier layer to at least a predetermined thickness, removing particles generated during at least one of the depositing steps, and filling the contact hole with an additional tungsten layer.

Abstract: A method for fabricating a capacitor using a metal/insulator/metal (MIM) structure is disclosed. An example method for fabricating a capacitor using an MIM structure including a first metal layer, a dielectric layer, and a second metal layer etches the second metal layer and the dielectric layer in order and changes the etching conditions associated with the second metal layer prior to etching the dielectric layer.