Abstract: A light emitting device including at least one first light emitting unit including an ultraviolet or violet light emitting diode chip and a first wavelength converter, at least one second light emitting unit including an ultraviolet or violet light emitting diode chip and a second wavelength converter, and at least one third light emitting unit including an ultraviolet or violet light emitting diode chip and a third wavelength converter, in which color coordinates of the first light emitting unit, the second light emitting unit, and the third light emitting unit define a triangular region in a CIE-1931 coordinate system, the triangular region including at least a portion of the Plankian locus, and a maximum color temperature of the Plankian locus included in the triangular region is 5000K or higher, and a minimum color temperature of the Plankian locus included in the triangular region is 3000K or lower.

Abstract: A light emitting device including a blue light emitting portion configured to emit blue light, a green light emitting portion configured to emit green light, and a red light emitting portion configured to emit red light, in which the blue light emitting portion includes a near-UV light emitting diode chip and a first wavelength conversion portion for wavelength conversion of near-UV light emitted from the near-UV light emitting diode chip, the blue light emitted from the blue light emitting portion includes a first peak wavelength in a wavelength band corresponding to near-UV light and a second peak wavelength in a wavelength band corresponding to blue light, and an intensity of the first peak wavelength is in a range of 0% to 20% of an intensity of the second peak wavelength.

Abstract: A light emitting element including a first light emitting diode chip to emit emitting light having a peak wavelength in the range of 350 nm to 420 nm, a second light emitting diode chip separated from the first light emitting diode chip and to emit emitting light having a peak wavelength in the range of 430 nm to 470 nm, a green phosphor formed on the first light emitting diode chip, and a red phosphor formed on the second light emitting diode chip, in which the green phosphor includes a BAM-based green phosphor.