Abstract: Apparatuses and methods of operating the same are described. A sensor system including a sensor, a processor, and a communication subsystem. The sensor may measure a defined area of a path located below the sensor system to obtain a sensor measurement. The processor may be coupled to the sensor. The processor may determine at least one of environmental condition information within the defined area or characteristic information associated with an object within the defined area using the sensor measurement. The communication subsystem may be coupled to the processor. The communication subsystem may send at least one of the environmental condition information or the characteristic information to a communication system of a vehicle.

Abstract: Apparatuses and methods of operating the same are described. A sensor system including a sensor, a processor, and a communication subsystem. The sensor may measure a defined area of a path located below the sensor system to obtain a sensor measurement. The processor may be coupled to the sensor. The processor may determine at least one of environmental condition information within the defined area or characteristic information associated with an object within the defined area using the sensor measurement. The communication subsystem may be coupled to the processor. The communication subsystem may send at least one of the environmental condition information or the characteristic information to a communication system of a vehicle.

Abstract: In situ wafer metrology is conducted to reliably obtain deposition thickness for each successive layer in a multi-layer deposition. A wafer to be processed is positioned in a processing station of a deposition process tool, the process tool having a reflectometer metrology apparatus for optically determining thickness of a deposited layer on the wafer. Prior to commencing a deposition, the wafer is aligned in the processing station such that an optical metrology spot generated by the reflectometer metrology apparatus will align with an unpatterned central region of a die on a wafer during a deposition conducted on the wafer in the tool. Thereafter, the thickness of a deposited layer on the wafer is reliably measured and monitored in situ.

Abstract: In situ wafer metrology is conducted to reliably obtain deposition thickness for each successive layer in a multi-layer deposition. A wafer to be processed is positioned in a processing station of a deposition process tool, the process tool having a reflectometer metrology apparatus for optically determining thickness of a deposited layer on the wafer. Prior to commencing a deposition, the wafer is aligned in the processing station such that an optical metrology spot generated by the reflectometer metrology apparatus will align with an unpatterned central region of a die on a wafer during a deposition conducted on the wafer in the tool. Thereafter, the thickness of a deposited layer on the wafer is reliably measured and monitored in situ.

Abstract: The current application is directed to an apparatus and a method for parallel testing and sorting of LED dies on a substrate wafer. The apparatus includes a moving stage and a chuck for the wafer, a wafer prober, collecting and imaging optics, sorting and separating optics, and a linear or rectangular array of light detectors. The method of testing includes moving an LED wafer or a test device on an XY stage, connecting the prober to a line of multiple LED dies or several lines of multiple LED dies, referred to as an “array of devices under test” (“ADUT”), measuring the electrical characteristics of the individual devices under test (“DUT”) in parallel, and collecting light from, and identifying the intensity and wavelength distribution of, the individual DUT in parallel.

Abstract: Provided are improved apparatus and methods for radiative treatment. In some embodiments, a semiconductor processing apparatus for radiative cure includes a process chamber and a radiation assembly external to the process chamber. The radiation assembly transmits radiation into the chamber on a substrate holder through a chamber window. A radiation detector measures radiation intensity from time to time. The assembly includes a gas inlet and exhaust operable to flow a radiation-activatable cooling gas through the radiation assembly.

Abstract: Provided are improved apparatus and methods for radiative treatment. In some embodiments, a semiconductor processing apparatus for radiative cure includes a process chamber and a radiation assembly external to the process chamber. The radiation assembly transmits radiation into the chamber on a substrate holder through a chamber window. A radiation detector measures radiation intensity from time to time. The assembly includes a gas inlet and exhaust operable to flow a radiation-activatable cooling gas through the radiation assembly.