Patents by Inventor Bob Carstensen

Bob Carstensen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of substantially uniformly etching non-homogeneous substrates
    Patent number: 7699998
    Abstract: A method of substantially uniformly etching oxides from non-homogeneous substrates is provided. The method utilizes a substantially non-aqueous etchant including an organic solvent and a fluorine-containing compound. The fluorine containing compound may include HF, HF:NH4F, (NH4)HF2, or TMAF:HF and mixtures thereof. The etchant may be applied to chemically non-homogeneous layers such as shallow trench isolation fill oxide layers, or to layers having a non-homogeneous composition or density at different depths within the layers, such as spin-on-glass or spin-on-dielectric films.
    Type: Grant
    Filed: August 22, 2005
    Date of Patent: April 20, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Janos Fucsko, Grady Waldo, Bob Carstensen, Satish Bedge
  • Method of substantially uniformly etching non-homogeneous substrates
    Publication number: 20070042608
    Abstract: A method of substantially uniformly etching oxides from non-homogeneous substrates is provided. The method utilizes a substantially non-aqueous etchant including an organic solvent and a fluorine-containing compound. The fluorine containing compound may include HF, HF:NH4F, (NH4)HF2, or TMAF:HF and mixtures thereof. The etchant may be applied to chemically non-homogeneous layers such as shallow trench isolation fill oxide layers, or to layers having a non-homogeneous composition or density at different depths within the layers, such as spin-on-glass or spin-on-dielectric films.
    Type: Application
    Filed: August 22, 2005
    Publication date: February 22, 2007
    Inventors: Janos Fucsko, Grady Waldo, Bob Carstensen, Satish Bedge
  • Capacitor constructions and semiconductor processing method of forming capacitor constructions
    Patent number: 6140203
    Abstract: A semiconductor processing method of forming a capacitor includes, a) providing a mass of electrically insulative oxide of a first density; b) densifying the oxide mass to a higher second density, the densified oxide mass being characterized by a wet etch rate of less than or equal to about 75 Angstroms/minute in a 100:1 by volume H.sub.
    Type: Grant
    Filed: April 12, 1999
    Date of Patent: October 31, 2000
    Assignee: Micron Technology, Inc.
    Inventors: Klaus Florian Schuegraf, Bob Carstensen
  • Capacitor constructions and semiconductor processing method of forming capacitor constructions
    Patent number: 6141204
    Abstract: A capacitor construction includes, i) a dense mass of electrically insulative oxide; ii) an electrically conductive inner capacitor plate overlying and contacting the electrically insulative oxide mass; iii) a capacitor dielectric layer overlying the inner capacitor plate and oxide mass, the capacitor dielectric layer comprising a nitride; iv) an electrically conductive outer capacitor plate overlying the capacitor dielectric layer; and v) the dense mass of electrically insulative oxide contacting the inner capacitor plate being characterized by a wet etch rate of less than or equal to about 75 Angstroms/minute in a 100:1 by volume H.sub.2 O:HF solution.
    Type: Grant
    Filed: June 3, 1998
    Date of Patent: October 31, 2000
    Assignee: Micron Technology, Inc.
    Inventors: Klaus Florian Schuegraf, Bob Carstensen
  • Capacitor constructions and semiconductor processing method of forming capacitor constructions
    Patent number: 5933723
    Abstract: A semiconductor processing method of forming a capacitor includes, a) providing a mass of electrically insulative oxide of a first density; b) densifying the oxide mass to a higher second density, the densified oxide mass being characterized by a wet etch rate of less than or equal to about 75 Angstroms/minute in a 100:1 by volume H.sub.
    Type: Grant
    Filed: October 31, 1997
    Date of Patent: August 3, 1999
    Assignee: Micron Technology, Inc.
    Inventors: Klaus Florian Schuegraf, Bob Carstensen
  • Capacitor constructions
    Patent number: 5771150
    Abstract: A capacitor construction includes, i) a dense mass of electrically insulative oxide; ii) an electrically conductive inner capacitor plate overlying and contacting the electrically insulative oxide mass; iii) a capacitor dielectric layer overlying the inner capacitor plate and oxide mass, the capacitor dielectric layer comprising a nitride; iv) an electrically conductive outer capacitor plate overlying the capacitor dielectric layer; and v) the dense mass of electrically insulative oxide contacting the inner capacitor plate being characterized by a wet etch rate of less than or equal to about 75 Angstroms/minute in a 100:1 by volume H.sub.2 O:HF solution.
    Type: Grant
    Filed: January 3, 1996
    Date of Patent: June 23, 1998
    Assignee: Micron Technology, Inc.
    Inventors: Klaus Florian Schuegraf, Bob Carstensen