Patents by Inventor Bob Kong
Bob Kong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9023137Abstract: Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.Type: GrantFiled: August 29, 2013Date of Patent: May 5, 2015Assignee: Intermolecular, Inc.Inventors: Bob Kong, Igor Ivanov, Zhi-Wen Sun, Jinhong Tong
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Patent number: 8859427Abstract: Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.Type: GrantFiled: December 22, 2011Date of Patent: October 14, 2014Assignee: Intermolecular, Inc.Inventors: Bob Kong, Tony Chiang, Chi-I Lang, Zhi-Wen Sun, Jinhong Tong
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Patent number: 8728879Abstract: Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.Type: GrantFiled: July 12, 2012Date of Patent: May 20, 2014Assignee: Intermolecular, Inc.Inventors: Bob Kong, Tony Chiang, Chi-I Lang, Zhi-Wen Wen Sun, Jinhong Tong
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Publication number: 20130340648Abstract: Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.Type: ApplicationFiled: August 29, 2013Publication date: December 26, 2013Applicant: Intermolecular, Inc.Inventors: Bob Kong, Igor Ivanov, Zhi-Wen Sun, Jinhong Tong
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Patent number: 8551560Abstract: Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.Type: GrantFiled: May 22, 2009Date of Patent: October 8, 2013Assignee: Intermolecular, Inc.Inventors: Jinhong Tong, Zhi-Wen Sun, Chi-I Lang, Nitin Kumar, Bob Kong, Zachary Fresco
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Patent number: 8545998Abstract: Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.Type: GrantFiled: December 21, 2011Date of Patent: October 1, 2013Assignee: Intermolecular, Inc.Inventors: Bob Kong, Igor Ivanov, Zhi-Wen Sun, Jinhong Tong
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Publication number: 20120325109Abstract: Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.Type: ApplicationFiled: December 22, 2011Publication date: December 27, 2012Applicant: Intermolecular, Inc.Inventors: Bob Kong, Zhi-Wen Sun, Chi-I Lang, Jinhong Tong, Tony Chiang
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Publication number: 20120295436Abstract: Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.Type: ApplicationFiled: July 12, 2012Publication date: November 22, 2012Applicant: Intermolecular, Inc.Inventors: Bob Kong, Zhi-Wen Sun, Chi-I Lang, Jinhong Tong, Tony Chiang
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Patent number: 8278215Abstract: Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials.Type: GrantFiled: May 2, 2011Date of Patent: October 2, 2012Assignee: Intermolecular, Inc.Inventors: Zhi-Wen Sun, Bob Kong, Igor Ivanov, Tony Chiang
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Publication number: 20120091590Abstract: Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.Type: ApplicationFiled: December 21, 2011Publication date: April 19, 2012Applicant: Intermolecular, Inc.Inventors: Bob Kong, Zhi-Wen Sun, Igor Ivanov, Jihong Tong
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Patent number: 8143164Abstract: Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.Type: GrantFiled: February 9, 2009Date of Patent: March 27, 2012Assignee: Intermolecular, Inc.Inventors: Bob Kong, Zhi-Wen Sun, Chi-I Lang, Jinhong Tong, Tony Chiang
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Publication number: 20110207320Abstract: Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products.Type: ApplicationFiled: May 2, 2011Publication date: August 25, 2011Applicant: INTERMOLECULAR, INC.Inventors: Zhi-Wen Sun, Bob Kong, Igor Ivanov, Tony Chiang
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Patent number: 7968462Abstract: Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials.Type: GrantFiled: November 7, 2008Date of Patent: June 28, 2011Assignee: Intermolecular, Inc.Inventors: Zhi-Wen Sun, Bob Kong, Igor Ivanov, Tony Chiang
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Publication number: 20100203731Abstract: Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.Type: ApplicationFiled: February 9, 2009Publication date: August 12, 2010Inventors: Bob Kong, Zhi-Wen Sun, Chi-I Lang, Jinhong Tong, Tony Chiang
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Publication number: 20100055422Abstract: Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.Type: ApplicationFiled: August 28, 2008Publication date: March 4, 2010Inventors: Bob Kong, Zhi-Wen Sun, Igor Ivanov, Jinhong Tong
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Publication number: 20090291275Abstract: Methods for improving selective deposition of a capping layer on a patterned substrate are presented, the method including: receiving the patterned substrate, the patterned substrate including a conductive region and a dielectric region; forming a molecular masking layer (MML) on the dielectric region; preparing an electroless (ELESS) plating bath, where the ELESS plating bath includes: a cobalt (Co) ion source: a complexing agent: a buffer: a tungsten (W) ion source: and a reducing agent; and reacting the patterned substrate with the ELESS plating bath for an ELESS period at an ELESS temperature and an ELESS pH so that the capping layer is selectively formed on the conductive region. In some embodiments, methods further include a pH adjuster for adjusting the ELESS pH to a range of approximately 9.0 pH to 9.2 pH. In some embodiments, the pH adjuster is tetramethylammonium hydroxide (TMAH). In some embodiments, the MML is hydrophilic.Type: ApplicationFiled: May 22, 2009Publication date: November 26, 2009Inventors: Jinhong Tong, Zhi-Wen Sun, Chi-I Lang, Nitin Kumar, Bob Kong, Zachary Fresco
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Patent number: 6797312Abstract: Electroless plating solutions are disclosed for forming metal alloys, such as cobalt-tungsten alloys. In accordance with the present invention, the electroless plating solutions may be formulated so as not to contain any alkali metals. Further, the solutions can be formulated without the use of tetramethylammonium hydroxide. In a further embodiment, a plating solution can be formulated that does not require the use of a catalyst, such as a palladium catalyst prior to depositing the metal alloy on a substrate.Type: GrantFiled: January 21, 2003Date of Patent: September 28, 2004Assignee: Mattson Technology, Inc.Inventors: Bob Kong, Nanhai Li
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Publication number: 20040142114Abstract: Electroless plating solutions are disclosed for forming metal alloys, such as cobalt-tungsten alloys. In accordance with the present invention, the electroless plating solutions may be formulated so as not to contain any alkali metals. Further, the solutions can be formulated without the use of tetramethylammonium hydroxide. In a further embodiment, a plating solution can be formulated that does not require the use of a catalyst, such as a palladium catalyst prior to depositing the metal alloy on a substrate.Type: ApplicationFiled: January 21, 2003Publication date: July 22, 2004Applicant: Mattson Technology, Inc.Inventors: Bob Kong, Nanhai Li