Patents by Inventor Bob Maraschin
Bob Maraschin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8490573Abstract: Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.Type: GrantFiled: December 14, 2010Date of Patent: July 23, 2013Assignee: Lam Research CorporationInventors: Yezdi Dordi, John Boyd, William Thie, Bob Maraschin, Fred C. Redeker, Joel M. Cook
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Patent number: 8419917Abstract: An electroplating head is disposed above and proximate to an upper surface of a wafer. Cations are transferred from an anode to an electroplating solution within the electroplating head. The electroplating solution flows downward through a porous electrically resistive material at an exit of the electroplating head to be disposed on the upper surface of the wafer. An electric current is established between the anode and the upper surface of the wafer through the electroplating solution. The electric current is uniformly distributed by the porous electrically resistive material present between the anode and the upper surface of the wafer. The electric current causes the cations to be attracted to the upper surface of the wafer.Type: GrantFiled: June 10, 2009Date of Patent: April 16, 2013Assignee: Lam Research CorporationInventors: Yezdi Dordi, Bob Maraschin, John Boyd, Fred C. Redeker
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Patent number: 8048283Abstract: First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.Type: GrantFiled: March 15, 2010Date of Patent: November 1, 2011Assignee: Lam Research CorporationInventors: Yezdi Dordi, Bob Maraschin, John Boyd, Fred C. Redeker, Carl Woods
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Publication number: 20110081779Abstract: Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.Type: ApplicationFiled: December 14, 2010Publication date: April 7, 2011Applicant: Lam Research CorporationInventors: Yezdi Dordi, John Boyd, William Thie, Bob Maraschin, Fred C. Redeker, Joel M. Cook
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Patent number: 7875554Abstract: Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.Type: GrantFiled: March 7, 2008Date of Patent: January 25, 2011Assignee: Lam Research CorporationInventors: Yezdi Dordi, John Boyd, William Thie, Bob Maraschin, Fred C. Redeker, Joel M. Cook
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Publication number: 20100170803Abstract: First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.Type: ApplicationFiled: March 15, 2010Publication date: July 8, 2010Applicant: Lam Research CorporationInventors: Yezdi Dordi, Bob Maraschin, John Boyd, Fred C. Redeker, Carl Woods
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Patent number: 7704367Abstract: First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.Type: GrantFiled: June 28, 2004Date of Patent: April 27, 2010Assignee: Lam Research CorporationInventors: Yezdi Dordi, Bob Maraschin, John Boyd, Fred C. Redeker, Carl Woods
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Publication number: 20090242413Abstract: An electroplating head is disposed above and proximate to an upper surface of a wafer. Cations are transferred from an anode to an electroplating solution within the electroplating head. The electroplating solution flows downward through a porous electrically resistive material at an exit of the electroplating head to be disposed on the upper surface of the wafer. An electric current is established between the anode and the upper surface of the wafer through the electroplating solution. The electric current is uniformly distributed by the porous electrically resistive material present between the anode and the upper surface of the wafer. The electric current causes the cations to be attracted to the upper surface of the wafer.Type: ApplicationFiled: June 10, 2009Publication date: October 1, 2009Applicant: Lam Research CorporationInventors: Yezdi Dordi, Bob Maraschin, John Boyd, Fred C. Redeker
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Patent number: 7582565Abstract: Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas present on a surface of the wafer. A planar member is positioned over and proximate to a top surface of the wafer. Positioning of the planar member serves to entrap electroless plating solution between the planar member and the wafer surface. Radiant energy is applied to the wafer surface to cause a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase in turn causes plating reactions to occur at the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.Type: GrantFiled: March 24, 2008Date of Patent: September 1, 2009Assignee: Lam Research CorporationInventors: Fred C. Redeker, John Boyd, Yezdi Dordi, William Thie, Bob Maraschin
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Patent number: 7563348Abstract: An electroplating head including a chamber having a fluid entrance and a fluid exit is provided. The chamber is configured to contain a flow of electroplating solution from the fluid entrance to the fluid exit. The electroplating head also includes an anode disposed within the chamber. The anode is configured to be electrically connected to a power supply. The electroplating head further includes a porous resistive material disposed at the fluid exit such that the flow of electroplating solution is required to traverse through the porous resistive material.Type: GrantFiled: June 28, 2004Date of Patent: July 21, 2009Assignee: Lam Research CorporationInventors: Yezdi Dordi, Bob Maraschin, John Boyd, Fred C. Redeker
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Publication number: 20080166885Abstract: Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas present on a surface of the wafer. A planar member is positioned over and proximate to a top surface of the wafer. Positioning of the planar member serves to entrap electroless plating solution between the planar member and the wafer surface. Radiant energy is applied to the wafer surface to cause a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase in turn causes plating reactions to occur at the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.Type: ApplicationFiled: March 24, 2008Publication date: July 10, 2008Applicant: Lam Research CorporationInventors: Fred C. Redeker, John Boyd, Yezdi Dordi, William Thie, Bob Maraschin
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Publication number: 20080153291Abstract: Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.Type: ApplicationFiled: March 7, 2008Publication date: June 26, 2008Applicant: Lam Research CorporationInventors: Yezdi Dordi, John Boyd, William Thie, Bob Maraschin, Fred C. Redeker, Joel M. Cook
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Patent number: 7368017Abstract: Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas present on a surface of the wafer. A planar member is positioned over and proximate to a top surface of the wafer. Positioning of the planar member serves to entrap electroless plating solution between the planar member and the wafer surface. Radiant energy is applied to the wafer surface to cause a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase in turn causes plating reactions to occur at the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.Type: GrantFiled: December 12, 2003Date of Patent: May 6, 2008Assignee: Lam Research CorporationInventors: Fred C. Redeker, John Boyd, Yezdi Dordi, William Thie, Bob Maraschin
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Patent number: 7358186Abstract: Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.Type: GrantFiled: December 12, 2003Date of Patent: April 15, 2008Assignee: Lam Research CorporationInventors: Yezdi Dordi, John Boyd, William Thie, Bob Maraschin, Fred C. Redeker, Joel M. Cook
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Publication number: 20050284748Abstract: An electroplating head including a chamber having a fluid entrance and a fluid exit is provided. The chamber is configured to contain a flow of electroplating solution from the fluid entrance to the fluid exit. The electroplating head also includes an anode disposed within the chamber. The anode is configured to be electrically connected to a power supply. The electroplating head further includes a porous resistive material disposed at the fluid exit such that the flow of electroplating solution is required to traverse through the porous resistive material.Type: ApplicationFiled: June 28, 2004Publication date: December 29, 2005Applicant: Lam Research CorporationInventors: Yezdi Dordi, Bob Maraschin, John Boyd, Fred Redeker
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Publication number: 20050284767Abstract: First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.Type: ApplicationFiled: June 28, 2004Publication date: December 29, 2005Applicant: Lam Research CorporationInventors: Yezdi Dordi, Bob Maraschin, John Boyd, Fred Redeker, Carl Woods
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Publication number: 20050130415Abstract: Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.Type: ApplicationFiled: December 12, 2003Publication date: June 16, 2005Applicant: Lam Research CorporationInventors: Yezdi Dordi, John Boyd, William Thie, Bob Maraschin, Fred Redeker, Joel Cook
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Publication number: 20050126932Abstract: Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas present on a surface of the wafer. A planar member is positioned over and proximate to a top surface of the wafer. Positioning of the planar member serves to entrap electroless plating solution between the planar member and the wafer surface. Radiant energy is applied to the wafer surface to cause a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase in turn causes plating reactions to occur at the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.Type: ApplicationFiled: December 12, 2003Publication date: June 16, 2005Applicant: Lam Research CorporationInventors: Fred Redeker, John Boyd, Yezdi Dordi, William Thie, Bob Maraschin