Patents by Inventor Bob McFadden

Bob McFadden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming gate oxide having dual thickness by oxidation process
    Patent number: 6124171
    Abstract: Transistors are formed on the substrate having two different thickness' of gate oxides. A silicon nitride mask is used to protect one of the gate oxides while the other is grown. A nitride mask is formed from a hydrogen balanced nitride layer formed using direct plasma deposited nitride with an ammonia and silane chemistry. In one embodiment the nitride mask remains in place in the completed transistor.
    Type: Grant
    Filed: September 24, 1998
    Date of Patent: September 26, 2000
    Assignee: Intel Corporation
    Inventors: Reza Arghavani, Bruce Beattie, Robert S. Chau, Jack Kavalieros, Bob McFadden