Patents by Inventor Bob Yi Zheng

Bob Yi Zheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Infrared photodetectors
    Patent number: 11652183
    Abstract: An infrared photodetector includes: a p-type and highly-doped silicon substrate; a metal structure disposed on the silicon substrate; a first electric contact to the silicon substrate; and a second electric contact to the metal structure.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: May 16, 2023
    Assignee: William Marsh Rice University
    Inventors: Bob Yi Zheng, Hangqi Zhao, Benjamin Cerjan, Mehbuba Tanzid, Peter J. Nordlander, Nancy J. Halas
  • Fully integrated CMOS-compatible photodetector with color selectivity and intrinsic gain
    Patent number: 9806217
    Abstract: A metal-semiconductor-metal photodetecting device and method of manufacturing a metal-semiconductor-metal photodetecting device that includes a p-type silicon substrate with an oxide layer disposed on the p-type silicon substrate. Schotty junctions are disposed adjacent to the oxide layer on the p-type silicon substrate and a plasmonic grating disposed on the oxide layer. The plasmonic grating provides wavelength range selectability for the photodetecting device.
    Type: Grant
    Filed: April 30, 2015
    Date of Patent: October 31, 2017
    Assignee: William Marsh Rice University
    Inventors: Bob Yi Zheng, Yumin Wang, Nancy J. Halas, Peter Nordlander
  • FULLY INTEGRATED CMOS-COMPATIBLE PHOTODETECTOR WITH COLOR SELECTIVITY AND INTRINSIC GAIN
    Publication number: 20150318415
    Abstract: A metal-semiconductor-metal photodetecting device and method of manufacturing a metal-semiconductor-metal photodetecting device that includes a p-type silicon substrate with an oxide layer disposed on the p-type silicon substrate. Schotty junctions are disposed adjacent to the oxide layer on the p-type silicon substrate and a plasmonic grating disposed on the oxide layer. The plasmonic grating provides wavelength range selectability for the photodetecting device.
    Type: Application
    Filed: April 30, 2015
    Publication date: November 5, 2015
    Inventors: Bob Yi Zheng, Yumin Wang, Naomi J. Halas, Peter Nordlander