Patents by Inventor Bobby L. Buchanan

Bobby L. Buchanan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process of making a ferroelectric electronic component and product
    Patent number: 5070026
    Abstract: An improved process of making a ferroelectric electronic component, such as a non-volatile RAM or an electro-optic switching array, is disclosed. The process essentially includes the separate formation of two subassemblies and then connecting them by placing one on top of the other. Electrical contacts are made by "bumping" or other "flip chip" techniques.
    Type: Grant
    Filed: June 26, 1989
    Date of Patent: December 3, 1991
    Assignee: Spire Corporation
    Inventors: Anton C. Greenwald, Bobby L. Buchanan
  • Polysilicon/silicon junction field effect transistors and integrated circuits (POSFET)
    Patent number: 4546366
    Abstract: A junction field effect transistor is fabricated in crystalline silicon by using oppositely doped polysilicon as the gate (POSFET). The depletion region of the pn (or np) junction formed at the polysilicon/silicon interface is used as the gate electrode to modulate the current path through the silicon channel from source to drain, the source and drain contacts may either be conventional metal or polysilicon heavily doped of the same conductivity type as the single crystal silicon substrate.
    Type: Grant
    Filed: February 19, 1982
    Date of Patent: October 8, 1985
    Inventor: Bobby L. Buchanan
  • Method of fabricating polysilicon/silicon junction field effect transistors
    Patent number: 4333224
    Abstract: A junction field effect transistor is fabricated in crystalline silicon by using oppositely doped polysilicon as the gate (POSFET). The depletion region of the pn (or np) junction formed at the polysilicon/silicon interface is used as the gate electrode to modulate the current path through the silicon channel from source to drain, the source and drain contacts may either be conventional metal or polysilicon heavily doped of the same conductivity type as the single crystal silicon substrate.
    Type: Grant
    Filed: May 6, 1980
    Date of Patent: June 8, 1982
    Inventor: Bobby L. Buchanan