Abstract: A material processing apparatus includes a vacuum chamber, an electrically grounded shield and/or workpiece, multiple radio frequency-powered electrodes within the vacuum chamber, magnets, and a gas inlet operable to flow a precursor gas to a plasma area located between the electrodes. In another aspect, magnets and spaced apart radio frequency-powered electrodes are operable to create a magnetic field and a radio frequency field within a plasma, which causes a plasma enhanced chemical vapor deposition of coating material onto a workpiece or substrate within a vacuum chamber.