Patents by Inventor Bog-Gi Kim

Bog-Gi Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical-pressure tailoring of low-field, room temperature magnetoresistance in (Ca, Sr, Ba) FeMoO
    Patent number: 7195749
    Abstract: The room temperature, low field intergrain magnetoresistance (IMR) of the double perovsktite SrFe0.5MO0.5O3 is found to be highly tunable by doping either Ca or Ba into the Sr site. The dopant exerts a chemical pressure, changing the Curie temperature and the magnetic softness. The IMR at optimal doping (Sr0.2Ba0.8Fe0.5Mo0.5O3) is approximately 3.5% in 100 Oe, and increases further in high fields. The unprecedented strength of the IMR in this highly spin polarized system provides new grounds for employing novel magnetic materials for new magnetic sensing applications and spin electronics.
    Type: Grant
    Filed: April 4, 2001
    Date of Patent: March 27, 2007
    Assignee: Rutgers University
    Inventors: Sang-Wook Cheong, Bog-Gi Kim
  • Chemical-pressure tailoring of low-field, room temperature magnetoresistance in (ca, sr, ba) fe.0.5mo0.5o3
    Publication number: 20040057897
    Abstract: The room temperature, low field intergrain magnetoresistance (IMR) of the double perovsktite SrFe0.5MO0.5O3 is found to be highly tunable by doping either Ca or Ba into the Sr site. The dopant exerts a chemical pressure, changing the Curie temperature and the magnetic softness. The IMR at optimal doping (Sr0.2Ba0.8Fe0.5Mo0.5O3) is approximately 3.5% in 100 Oe, and increases further in high fields. The unprecedented strength of the IMR in this highly spin polarized system provides new grounds for employing novel magnetic materials for new magnetic sensing applications and spin electronics.
    Type: Application
    Filed: March 7, 2003
    Publication date: March 25, 2004
    Inventors: Sang-Wook Cheong, Bog-Gi Kim