Abstract: Provided is a monitoring apparatus including a communication unit which receives streaming data and metadata of a video from each of a plurality of cameras installed indoors when the cameras obtain videos by capturing specific areas, respectively; a metadata analysis unit which analyzes the received metadata and extracts information about an event that occurred; a video selection unit which selects a video containing an area in which the event occurred from the videos based on the extracted information about the event; and a screen unit which receives the selected video from the video selection unit and immediately displays the received video when the monitoring apparatus is operated.

Abstract: Provided is a monitoring apparatus including a communication unit which receives streaming data and metadata of a video from each of a plurality of cameras installed indoors when the cameras obtain videos by capturing specific areas, respectively; a metadata analysis unit which analyzes the received metadata and extracts information about an event that occurred; a video selection unit which selects a video containing an area in which the event occurred from the videos based on the extracted information about the event; and a screen unit which receives the selected video from the video selection unit and immediately displays the received video when the monitoring apparatus is operated.

Abstract: Provided is a monitoring apparatus including a communication unit which receives streaming data and metadata of a video from each of a plurality of cameras installed indoors when the cameras obtain videos by capturing specific areas, respectively; a metadata analysis unit which analyzes the received metadata and extracts information about an event that occurred; a video selection unit which selects a video containing an area in which the event occurred from the videos based on the extracted information about the event; and a screen unit which receives the selected video from the video selection unit and immediately displays the received video when the monitoring apparatus is operated.

Abstract: Provided is a monitoring apparatus including a communication unit which receives streaming data and metadata of a video from each of a plurality of cameras installed indoors when the cameras obtain videos by capturing specific areas, respectively; a metadata analysis unit which analyzes the received metadata and extracts information about an event that occurred; a video selection unit which selects a video containing an area in which the event occurred from the videos based on the extracted information about the event; and a screen unit which receives the selected video from the video selection unit and immediately displays the received video when the monitoring apparatus is operated.

Abstract: A fan-out semiconductor package includes: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole and having an active surface and an inactive surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; and a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip, wherein the first interconnection member and the second interconnection member each include a redistribution layer electrically connected to the connection pads, the semiconductor chip includes a passivation layer having openings exposing at least portions of the connection pads, the redistribution layer of the second interconnection member is connected to the connection pad through a via, a metal layer is disposed between the connection pad and the via, and the metal layer covers at least a portion of the connection pad.

Abstract: A semiconductor device includes a bit line disposed over a semiconductor substrate, a supporting film being perpendicular to the bit line, a first storage node contact disposed at a lower part of a region disposed between the bit line and the supporting film, and a second storage node contact having a line shape, disposed over the first storage node contact and the bit line, isolated by the supporting film, and patterned in a diagonal direction across the bit line.

Abstract: A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.

Abstract: A semiconductor device includes a bit line disposed over a semiconductor substrate, a supporting film being perpendicular to the bit line, a first storage node contact disposed at a lower part of a region disposed between the bit line and the supporting film, and a second storage node contact having a line shape, disposed over the first storage node contact and the bit line, isolated by the supporting film, and patterned in a diagonal direction across the bit line.

Abstract: A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.

Abstract: A semiconductor device includes a bit line disposed over a semiconductor substrate, a supporting film being perpendicular to the bit line, a first storage node contact disposed at a lower part of a region disposed between the bit line and the supporting film, and a second storage node contact having a line shape, disposed over the first storage node contact and the bit line, isolated by the supporting film, and patterned in a diagonal direction across the bit line.

Abstract: A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.

Abstract: Disclosed herein is a solder paste droplet ejection apparatus including: a nozzle cap forming an appearance and including a heating electric wire provided inside thereof; a nozzle unit formed inside the nozzle cap, spaced apart from the nozzle cap, and surrounded by the nozzle cap; an ejection probe formed inside the nozzle unit, spaced apart from the nozzle unit, and surrounded by the nozzle unit; and a transfer unit formed in a top portion of the nozzle cap and used for a minute movement, wherein a solder paste supplied in a space between the nozzle unit and the ejection probe is ejected in a droplet shape along the ejection probe.

Abstract: Disclosed herein are a solder sheet and a soldering method using the same. The solder sheet includes: a plurality of solder rods arranged to have a uniform height h and an area density N; and a support having an adhesive formed on one surface thereof and supporting the plurality of solder rods such that one end of each of the plurality of solder rods is attached to be perpendicular to the surface on which the adhesive is formed. Solder bumps can be formed on soldering portions of the substrate by using the solder sheet through a single process without a mask, and thus, the process can be simplified, costs can be reduced, and a defect rate can be lowered, thereby enhancing reliability.

Abstract: Disclosed herein is a nano-patterning system including a nano-patterning apparatus. The nano-patterning apparatus includes: a holder unit including a transfer unit and an insulating unit; a tip unit inserted into the holder unit, downwardly protruded, and having a flow channel; a flow path having one end connected to the flow channel through one side of the transfer unit or the insulating unit and extending to the outside to serve as a movement path allowing a nano-patterning material to move therealong; a pressing unit pressing the nano-patterning material at one side of the flow path; and a storage unit connected to the other end of the flow path and storing the nano-patterning material.

Abstract: Disclosed herein is a reflow inspection system. The reflow inspection system according to an embodiment of the present invention includes an oven, a stage on which a reflow inspection target is placed inside the oven, and which includes a temperature detecting sensor for detecting a temperature of the reflow inspection target formed on one side thereof; a light source unit formed on one side of the oven and irradiating the reflow inspection target with light, an imaging unit sucking smoke generated in the reflow inspection target, and obtaining image information of the reflow inspection target to thereby transmit the obtained image information to the outside, an image processing unit processing the image information obtained in the imaging unit, and a control unit connected to the stage, the temperature detecting sensor, and the image processing unit to perform control of a reflow inspection process.

Abstract: A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.

Abstract: A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a predetermined thickness to expose a semiconductor substrate. Then, a SEG film is grown to form an active region whose area is increased. As a result, a current driving power of a transistor located at a cell region and peripheral circuit regions is improved.

Abstract: A display apparatus including a display to display a picture; a signal processor to format a video signal to be output to the display; and a controller to output a control signal to the signal processor on the basis of a picture display state controlled through a control screen; wherein the picture display state is set by a user through the control screen, which is displayed concurrently with a plurality of reference screens displaying different values of the picture display state.

Abstract: A gate structure of a semiconductor device comprising a silicon substrate having a field oxide film, a plurality of gates formed by sequentially stacking a first gate dielectric film, a first gate conductive film, and a gate silicide film on the silicon substrate. a thermal oxide film formed on a side of the first gate conductive film, a plurality of trenches formed between the gates, a second gate oxide film formed on an interior wall of each trench; and a second conductive film formed in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film and the thermal oxide film.

Abstract: A display apparatus including a display to display a picture; a signal processor to format a video signal to be output to the display; and a controller to output a control signal to the signal processor on the basis of a picture display state controlled through a control screen; wherein the picture display state is set by a user through the control screen, which is displayed concurrently with a plurality of reference screens displaying different values of the picture display state.