Abstract: The invention relates to a method for manufacturing a thin film solar cell, comprising the sequential steps of a) depositing a positively doped Si layer (3), b1) depositing a first intrinsic a-Si:H layer (21) at a first deposition rate, b2) depositing a second intrinsic a-Si:H layer (22) at a second deposition rate, and c) depositing a negatively doped Si layer (5), whereby the second deposition rate is greater than the first deposition rate. The thin film solar cell manufactured is characterized by an increased initial and stabilized efficiency while at the same time the overall deposition rate, even by depositing two different intrinsic layers (21, 22), is kept at a reasonable and economic level.

Abstract: A photovoltaic cell comprises an electrode layer (1b) of a transparent, electrically conductive oxide which is deposited upon a transparent carrier substrate (7b). There follows a contact layer (11b) which is of first type doped amorphous silicon and has a thickness of at most 10 nm. There follows a layer (26) of first type doped amorphous silicon compound which has a bandgap which is larger than the bandgap of the material of the addressed contact layer (11b). Subsequently to the first type doped amorphous silicon compound layer (2b) there follows a layer of intrinsic type silicon compound (3b) and a layer of second type doped silicon compound (5b).