Patents by Inventor Bohan Jiang

Bohan Jiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11689662
    Abstract: A system including a mobile application on a user's mobile device for connecting to a plurality of contact centers and providing personalized context to the user. The system includes: the mobile application; a connection from the mobile application to a central API service, wherein the central API service provides authentication tokens to the mobile application for facilitating interaction therebetween; a plurality of vendors which the user has associated with their profile and have been integrated with the central API service, wherein the vendors are operably connected with the central API service for information sharing; and a plurality of media channels connecting the plurality of vendors with the central API service, allowing the user to: view personalized context from past interactions between the user and the plurality of contact centers through the mobile application; and connect with the contact centers.
    Type: Grant
    Filed: November 4, 2021
    Date of Patent: June 27, 2023
    Inventors: John Bohan Jiang, Clive John-Chuan, William Zhao, Robert J. Culbert, Colin Kum-Teng Hung
  • Patent number: 11538923
    Abstract: A method for etching back a hard mask layer on top of dummy polysilicon gates in a gate last process comprises: step 1: forming a plurality of dummy gate structures; step 2: depositing a spin-on carbon (SOC) layer to fill the space regions between the sidewalls of the dummy gate structures to a level above the top surface of each of the plurality of dummy gate structures; step 3: performing a first etching-back to the spin-on carbon layer to remove the SOC layer outside the space regions and keep the SOC layer in the space regions below the top surfaces of each of dummy polysilicon gate; step 4: performing a second etching-back by using the remaining spin-on carbon layer as a mask to remove the hard mask layer and the sidewalls of the dummy polysilicon gates on both sides of the hard mask layer at the same time; step 5: removing the SOC layer. This technique saves one photomask and improves the process window.
    Type: Grant
    Filed: April 28, 2021
    Date of Patent: December 27, 2022
    Assignee: SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION
    Inventors: Shidong Fu, Ran Huang, Bohan Jiang, Ying Xu
  • Publication number: 20220141337
    Abstract: A system including a mobile application on a user's mobile device for connecting to a plurality of contact centers and providing personalized context to the user. The system includes: the mobile application; a connection from the mobile application to a central API service, wherein the central API service provides authentication tokens to the mobile application for facilitating interaction therebetween; a plurality of vendors which the user has associated with their profile and have been integrated with the central API service, wherein the vendors are operably connected with the central API service for information sharing; and a plurality of media channels connecting the plurality of vendors with the central API service, allowing the user to: view personalized context from past interactions between the user and the plurality of contact centers through the mobile application; and connect with the contact centers.
    Type: Application
    Filed: November 4, 2021
    Publication date: May 5, 2022
    Applicant: GENESYS TELECOMMUNICATIONS LABORATORIES, INC.
    Inventors: JOHN BOHAN JIANG, CLIVE JOHN-CHUAN, WILLIAM ZHAO, ROBERT J. CULBERT, COLIN KUM-TENG HUNG
  • Publication number: 20220102531
    Abstract: A method for etching back a hard mask layer on top of dummy polysilicon gates in a gate last process comprises: step 1: forming a plurality of dummy gate structures; step 2: depositing a spin-on carbon (SOC) layer to fill the space regions between the sidewalls of the dummy gate structures to a level above the top surface of each of the plurality of dummy gate structures; step 3: performing a first etching-back to the spin-on carbon layer to remove the SOC layer outside the space regions and keep the SOC layer in the space regions below the top surfaces of each of dummy polysilicon gate; step 4: performing a second etching-back by using the remaining spin-on carbon layer as a mask to remove the hard mask layer and the sidewalls of the dummy polysilicon gates on both sides of the hard mask layer at the same time; step 5: removing the SOC layer. This technique saves one photomask and improves the process window.
    Type: Application
    Filed: April 28, 2021
    Publication date: March 31, 2022
    Inventors: Shidong Fu, Ran Huang, Bohan Jiang, Ying Xu