Patents by Inventor Bohdan Jaroszewicz

Bohdan Jaroszewicz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Monolithic active pixel dosimeter
    Patent number: 7582875
    Abstract: A monolithic active pixel dosimeter, provided with at least a sensing cell, having at least a junction sensing element. The junction sensing element includes a sensing region, having a first type of conductivity, and a charge collecting region, contiguous to the sensing region and having a second type of conductivity. The sensing cell further includes an ohmic region at least partially overlapping and extending laterally outside the charge collecting region, and an annular insulating region, abutting the ohmic region, so as to form an insulating junction surrounding both the ohmic region and the charge collection region.
    Type: Grant
    Filed: May 5, 2005
    Date of Patent: September 1, 2009
    Assignees: Universitaet Karlsruhe., Akademia Gomiczo-Hutnicza, Université Louis Pasteur, Centre National de la Recherche Scientifique, Institute of Electron Technology, Fondazione per Adroterapia Oncologica - Tera, Universite' de Geneve, Instytut Fizyki Jadrowej Im H Niewodniczanskiego
    Inventors: Massimo Caccia, Leopoldo Conte, Mario Alemi, Chiara Cappellini, Antonello Luigi Airoldi, Carla Bianchi, Raffaele Novario, Wim De Boer, Eugene Grigoriev, Halina Niemiec, Wojciech Kucewicz, Francesco Cannillo, Gilles Clauss, Claude Colledani, Grzegorz Deptuch, Wojciech Dulinski, Piotr Grabiec, Jacek Marczewski, Krzysztof Domanski, Bohdan Jaroszewicz, Krzysztof Kucharski, Laura Badano, Omella Ferrando, Georg Popowski, Agnieszka Zalewska, Adam Czermak
  • Electronic circuit for ion sensor with body effect reduction
    Patent number: 7368917
    Abstract: An electronic circuit for ion sensor with the body effect reduction includes a bridge-type floating source circuit provided with an input terminal, an output terminal reflecting the change in the potential dependent on ion concentration, and an ion-sensitive field effect transistor (ISFET) wherein one terminal of the ISFET is coupled with the output terminal; a current mirror for providing a current to the bridge-type circuit; a third transistor for receiving the operating current provided by the current mirror, identical to the current provided to the ISFET; a differential amplifying circuit, wherein one input terminal of the amplifying circuit is input with a reference voltage, and the other input terminal is coupled with the output of the bridge-type readout circuit; and a third amplifier to generate a differential output voltage compensated for the body effect, temperature and time drift effects.
    Type: Grant
    Filed: June 12, 2006
    Date of Patent: May 6, 2008
    Assignee: Chung Yuan Christian University
    Inventors: Wen-Yaw Chung, Chung-Huang Yang, Dorota Genowefa Pijanowska, Piotr Grabiec, Bohdan Jaroszewicz, Wladyslaw Torbicz
  • Electronic circuit for ion sensor with body effect reduction
    Publication number: 20070089988
    Abstract: An electronic circuit for ion sensor with the body effect reduction includes a bridge-type floating source circuit provided with an input terminal, an output terminal reflecting the change in the potential dependent on ion concentration, and an ion-sensitive field effect transistor (ISFET) wherein one terminal of the ISFET is coupled with the output terminal; a current mirror for providing a current to the bridge-type circuit; a third transistor for receiving the operating current provided by the current mirror, identical to the current provided to the ISFET; a differential amplifying circuit, wherein one input terminal of the amplifying circuit is input with a reference voltage, and the other input terminal is coupled with the output of the bridge-type readout circuit; and a third amplifier to generate a differential output voltage compensated for the body effect, temperature and time drift effects.
    Type: Application
    Filed: June 12, 2006
    Publication date: April 26, 2007
    Inventors: Wen-Yaw Chung, Chung-Huang Yang, Dorota Genowefa Pijanowska, Piotr Grabiec, Bohdan Jaroszewicz, Wladyslaw Torbicz
  • Monolithic active pixel dosimeter
    Publication number: 20060043313
    Abstract: A monolithic active pixel dosimeter, provided with at least a sensing cell, having at least a junction sensing element. The junction sensing element includes a sensing region, having a first type of conductivity, and a charge collecting region, contiguous to the sensing region and having a second type of conductivity. The sensing cell further includes an ohmic region at least partially overlapping and extending laterally outside the charge collecting region, and an annular insulating region, abutting the ohmic region, so as to form an insulating junction surrounding both the ohmic region and the charge collection region.
    Type: Application
    Filed: May 5, 2005
    Publication date: March 2, 2006
    Inventors: Massimo Caccia, Leopoldo Conte, Mario Alemi, Chiara Cappellini, Antonello Airoldi, Carla Bianchi, Raffaele Novario, Wim De Boer, Eugene Grigoriev, Halina Niemiec, Wojciech Kucewicz, Francesco Cannillo, Gilles Clauss, Claude Colledani, Grzegorz Deptuch, Wojciech Dulinski, Piotr Grabiec, Jacek Marczewski, Krzysztof Domanski, Bohdan Jaroszewicz, Krzysztof Kucharski, Laura Badano, Omella Ferrando, Georg Popowski, Agnieszka Zalewska, Adam Czermak