Patents by Inventor Bohr-Ran Huang

Bohr-Ran Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Supercapacitor electrode, manufacturing method thereof, and supercapacitor
    Patent number: 11170943
    Abstract: A supercapacitor electrode includes a substrate and at least one nitrogen-doped ultra-nanocrystalline diamond layer. The nitrogen-doped ultra-nanocrystalline diamond layer is disposed on the substrate. The nitrogen-doped ultra-nanocrystalline diamond layer is a dense continuous film. A conductivity of the supercapacitor electrode is 130 S/cm or more. In addition, a manufacturing method of a supercapacitor electrode is provided.
    Type: Grant
    Filed: May 3, 2020
    Date of Patent: November 9, 2021
    Assignee: National Taiwan University of Science and Technology
    Inventors: Bohr-Ran Huang, Adhimoorthy Saravanan, Shyan-Kay Jou
  • SUPERCAPACITOR ELECTRODE, MANUFACTURING METHOD THEREOF, AND SUPERCAPACITOR
    Publication number: 20210296056
    Abstract: A supercapacitor electrode includes a substrate and at least one nitrogen-doped ultra-nanocrystalline diamond layer. The nitrogen-doped ultra-nanocrystalline diamond layer is disposed on the substrate. The nitrogen-doped ultra-nanocrystalline diamond layer is a dense continuous film. A conductivity of the supercapacitor electrode is 130 S/cm or more. In addition, a manufacturing method of a supercapacitor electrode is provided.
    Type: Application
    Filed: May 3, 2020
    Publication date: September 23, 2021
    Applicant: National Taiwan University of Science and Technology
    Inventors: Bohr-Ran Huang, Adhimoorthy Saravanan, Shyan-Kay Jou
  • GAS SENSOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20200003717
    Abstract: A gas sensor includes a substrate, a thin film metallic glass, an ultrananocrystalline diamond layer and a sensor structure. The thin film metallic glass is formed on the substrate. The ultrananocrystalline diamond layer partially covers the thin film metallic glass. The sensor structure includes a seed layer formed on the ultrananocrystalline diamond layer and a plurality of nanostructures formed on the seed layer.
    Type: Application
    Filed: March 14, 2019
    Publication date: January 2, 2020
    Inventors: Jinn P. CHU, Bohr-Ran HUANG, Markos Mehretie YENESEW
  • Ultraviolet sensor and method of manufacturing the same
    Patent number: 9966490
    Abstract: An ultraviolet sensor comprises a glass substrate, a semiconductor structure, an electrode layer and a thin film metallic glass. The semiconductor structure comprises a semiconductor seed layer formed on the glass substrate and a plurality of semiconductor nanostructures formed on the semiconductor seed layer. The electrode layer is formed between the semiconductor seed layer and the plurality of semiconductor nanostructures. The thin film metallic glass is in contact with the semiconductor structure, wherein an interface between the thin film metallic glass and the semiconductor structure forms a Schottky barrier junction to inhibit dark current and increase signal-to-noise ratio.
    Type: Grant
    Filed: June 5, 2017
    Date of Patent: May 8, 2018
    Assignee: NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Bohr-Ran Huang, Jinn Chu, You-Syuan Chen, Chia-Hao Chang