Patents by Inventor BOISE STATE UNIVERSITY

BOISE STATE UNIVERSITY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130312142
    Abstract: A high-speed atomic force microscope (HSAFM) is disclosed herein. The HSAFM includes a cantilever, a piezotube, an optical detector, a circuit element, and a feedback controller. The cantilever has a probe, and the piezotube is arranged in proximity to the probe. The optical detector is configured to detect deflection of the cantilever, and the circuit element is abutting a first end of the cantilever and is configured to exert a force on the cantilever to resist deflection of the cantilever. The circuit element is communicably connected to the optical detector by a first feedback loop. The feedback controller is communicably connected to the piezotube and configured to modulate the piezotube along the Z-axis towards and away from the probe. And the feedback controller is communicably connected to the optical detector through a second feedback loop.
    Type: Application
    Filed: May 1, 2013
    Publication date: November 21, 2013
    Applicant: Boise State University
    Inventor: Boise State University
  • Publication number: 20130119336
    Abstract: Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus “activating” the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity.
    Type: Application
    Filed: October 22, 2012
    Publication date: May 16, 2013
    Applicant: BOISE STATE UNIVERSITY
    Inventor: BOISE STATE UNIVERSITY
  • Publication number: 20130091954
    Abstract: An apparatus for sensing strain or stress includes a body including magnetic shape-memory alloy (MSMA) material, having a first axis. A first drive coil and first sensor coil are wound around the body about the first axis. The drive coil is coupled to a power source and configured to generate an alternating magnetic field on the body. The first sensor coil is configured to detect changes in inductance of the body due to changes in magnetic permeability of the body with deformation thereof.
    Type: Application
    Filed: October 15, 2012
    Publication date: April 18, 2013
    Applicant: BOISE STATE UNIVERSITY
    Inventor: BOISE STATE UNIVERSITY