Abstract: According to various examples, a device is described. The device may include a first package substrate. The device may also include a first mold layer with a first thickness. The device may also include a second mold layer with a second thickness proximal to the first mold layer. The second thickness may be larger than the first thickness. The first mold layer may include a plurality of first interconnects coupled to the first package substrate. The second mold layer may include a plurality of second interconnects configured to couple the first package substrate to a printed circuit board.

Abstract: The present disclosure is directed to a hybrid dielectric interconnect stack for a printed circuit board having a first dielectric layer with a first dielectric constant and a first dielectric loss tangent positioned over an intermediate layer, which includes a first dielectric sublayer with a first sublayer dielectric constant and a first sublayer dielectric loss tangent, an embedded conductive layer, and a second dielectric sublayer with a second sublayer dielectric constant and a second sublayer dielectric loss tangent, in which the embedded conductive layer is positioned between the first and second dielectric sublayers, and a second dielectric layer with a second dielectric constant and a second dielectric loss tangent, in which the intermediate layer is positioned between the first and second dielectric layers.

Abstract: Disclosed embodiments include silicon interconnect bridges that are in a molded frame, where the molded frame includes passive devices and the silicon interconnect bridge includes through-silicon vias that couple to a redistribution layer on both the silicon interconnect bridge and the molded frame.

Abstract: The present disclosure is directed to semiconductor packages, and methods for making them, which includes a substrate with a top surface and a bottom surface, a substrate recess in the bottom surface of the substrate, a first device positioned over the top surface of the substrate, which has the first device at least partially overlapping the substrate recess, a mold material in the substrate recess, which has the mold material overlapping the bottom surface of the substrate adjacent to the substrate recess, a second device positioned in the substrate recess, and a plurality of interconnect vias in the substrate, which has at least one of the plurality interconnect vias coupled to the first and second devices to provide a direct signal connection therebetween that minimizes signal latency.

Abstract: Disclosed embodiments include molded interconnect bridges that are in a molded frame, where the molded frame includes passive devices that couple to a metal buildup layer that includes at least one power rail and one ground rail. The molded interconnects bridge is embedded in an integrated-circuit package substrate between a die side and a land side, and closer to the die side.

Abstract: An electronic device comprises an integrated circuit (IC) die. The IC die includes a first bonding pad surface and a first backside surface opposite the first bonding pad surface; a first active device layer arranged between the first bonding pad surface and the first backside surface; and at least one stacked through silicon via (TSV) disposed between the first backside surface and the first bonding pad surface, wherein the at least one stacked TSV includes a first buried silicon via (BSV) portion having a first width and a second BSV portion having a second width smaller than the first width, and wherein the first BSV portion extends to the first backside surface and the second BSV portion extends to the first active device layer.

Abstract: Disclosed embodiments include composite-bridge die-to-die interconnects that are on a die side of an integrated-circuit package substrate and that contacts two IC dice and a passive device that is in a molding material, where the molding material also contacts the two IC dice.

Abstract: Disclosed embodiments include composite-bridge die-to-die interconnects that are on a die side of an integrated-circuit package substrate and that contacts two IC dice and a passive device that is in a molding material, where the molding material also contacts the two IC dice.

Abstract: An electronic device comprises an integrated circuit (IC) die. The IC die includes a first bonding pad surface and a first backside surface opposite the first bonding pad surface; a first active device layer arranged between the first bonding pad surface and the first backside surface; and at least one stacked through silicon via (TSV) disposed between the first backside surface and the first bonding pad surface, wherein the at least one stacked TSV includes a first buried silicon via (BSV) portion having a first width and a second BSV portion having a second width smaller than the first width, and wherein the first BSV portion extends to the first backside surface and the second BSV portion extends to the first active device layer.

Abstract: An electronic device comprises an integrated circuit (IC) die. The IC die includes a first bonding pad surface and a first backside surface opposite the first bonding pad surface; a first active device layer arranged between the first bonding pad surface and the first backside surface; and at least one stacked through silicon via (TSV) disposed between the first backside surface and the first bonding pad surface, wherein the at least one stacked TSV includes a first buried silicon via (BSV) portion having a first width and a second BSV portion having a second width smaller than the first width, and wherein the first BSV portion extends to the first backside surface and the second BSV portion extends to the first active device layer.

Abstract: A device is provided, including a package substrate including at least one opening extending through the package substrate, and an interconnect structure including a first segment and a second segment. The first segment may extend under a bottom surface of the package substrate and may further extend beyond a footprint of the package substrate. The second segment may extend vertically from the first segment and may extend at least partially through the at least one opening of the package substrate.

Abstract: A substrate may be included in an electronic device. The substrate may include a first layer that may include a dielectric material. The first layer may define a substrate surface. The substrate may include a second layer optionally including the dielectric material. The second layer may be coupled to the first layer. A wiring trace may be located in the substrate. A recess may extend through the substrate surface, the first layer, and may extend through the second layer. A substrate interconnect may be located within the recess. The substrate interconnect may be at least partially located below the substrate surface. The substrate interconnect may be in electrical communication with the wiring trace.

Abstract: An apparatus is provided which comprises: a first package, a second package coupled with the first package, the second package comprising a mold layer having a recess on a first mold surface, a first plurality of devices adjacent to the recess and a metal redistribution layer (RDL) coupled to a second mold surface opposite the first mold surface, wherein the mold layer includes a first thickness, wherein the recess includes a second thickness, and wherein the second thickness is less than the first thickness, and an integrated circuit device coupled with both the second package at the recess and with the first package through a plurality of solder bumps. Other embodiments are also disclosed and claimed.

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device can include a semiconductor package including a package substrate, a first semiconductor die on the package substrate, a second semiconductor die on the package substrate, a third semiconductor die on the package substrate, and a bridge interconnect at least partially embedded in the package substrate. The bridge interconnect can include a first bridge section coupling the first semiconductor die to the second semiconductor die, a second bridge section coupling the second semiconductor die to the third semiconductor die, and a power-ground section between the first section and the second section, the power-ground section comprising first and second conductive traces coupled to the second semiconductor die.

Abstract: A device is provided, including a dielectric layer, a plurality of first conductive segments within the dielectric layer and spaced apart from each other by respective first spacings, and a plurality of second conductive segments within the dielectric layer and spaced apart from each other by respective second spacings. The plurality of second conductive segments may be over and spaced apart from the plurality of first conductive segments by the dielectric layer. A respective one of the first conductive segments may at least partially extend across a corresponding one of the second spacings, and a respective one of the second conductive segments may at least partially extend across a corresponding one of the first spacings.

Abstract: The present disclosure generally relates to an electronic assembly. The electronic assembly may include a substrate including a plurality of first contact pads, a plurality of second contact pads, and a plurality of third contact pads. The electronic assembly may include a first device including a first footprint coupled to the substrate at a first surface. The electronic assembly may include a frame arranged between the first device and the substrate, the frame including a dielectric material, the frame further including a main frame extending around the first device, and further including a plurality of sub-frames encircling the plurality of first contact pads and the plurality of second contact pads on the substrate, wherein the frame may further include a conductive layer extending at least partially across the main frame.

Abstract: The present disclosure generally relates to an electronic assembly. The electronic assembly may include a semiconductor package including a first surface, an opposing second surface, and a side wall. The electronic assembly may also include a printed circuit board coupled to the second surface of the semiconductor package. The electronic assembly may further include at least one passive component array including one or more passive components at least partially embedded in a mold layer, each passive component further including a first terminal and a second terminal, wherein the first terminal of the passive component may be coupled to the printed circuit board and the passive component array may be attached to the side wall of the semiconductor package.

Abstract: The present disclosure is directed to an electronic assembly and method of forming thereof. The electronic assembly may include a package substrate with a top substrate surface and an interposer coupled to the package substrate at the top substrate surface. The interposer may include a plurality of through interposer vias and an opening extending through the interposer. A power module may be arranged in the opening in the interposer and coupled to the package substrate at the top substrate surface. The power module may include a plurality of interconnects including a first interconnect coupled to a first voltage and a second interconnect coupled to a second voltage.

Abstract: A device is provided, including a package substrate including at least one opening extending through the package substrate, and an interconnect structure including a first segment and a second segment. The first segment may extend under a bottom surface of the package substrate and may further extend beyond a footprint of the package substrate. The second segment may extend vertically from the first segment and may extend at least partially through the at least one opening of the package substrate.

Abstract: Semiconductor packages, and methods for making the semiconductor packages, having an interposer structure with one or more interposer and an extension platform, which has an opening for placing the interposer, and the space between the interposer and the extension platform is filled with a polymeric material to form a unitary interposer-extension platform composite structure. A stacked structure may be formed by at least a first semiconductor chip coupled to the interposer and at least a second semiconductor chip coupled to the extension platform, and at least one bridge extending over the space that electrically couples the extension platform and the interposer. The extension platform may include a recess step section that may accommodate a plurality of passive devices to reduced power delivery inductance loop for the high-density 2.5D and 3D stacked packaging applications.