Abstract: Disclosed are a substrate processing apparatus and a substrate processing method that are capable of detecting whether a treatment liquid has leaked from a nozzle and whether a temperature of the treatment liquid has reached a set temperature. The substrate processing apparatus includes: a housing providing an interior space; a support unit located in the interior space and supporting a substrate; a cup surrounding the support unit and having an open top; a liquid supply unit including a nozzle to supply a treatment liquid to the substrate supported by the support unit; and a waiting port which is installed in the housing and in which the nozzle waits, in which waiting port includes a liquid detection unit that detects a treatment liquid discharged from the nozzle while the nozzle is waiting.

Abstract: Disclosed is a method of processing a substrate, the method including: a substrate processing operation of processing a substrate by supplying a treatment liquid to a substrate loaded into a processing space of a processing container; and a container cleaning operation of cleaning an interior of the processing container in a state where the substrate is unloaded from the processing space, in which the container cleaning operation includes: a periodic cleaning operation of periodically cleaning the interior of the processing container; and an emergency cleaning operation of temporarily cleaning the interior of the processing container when a set condition is satisfied.

Abstract: Disclosed are a substrate treating method and a substrate treating apparatus, and more specifically, a substrate treating apparatus that treats a substrate by controlling descending airflow supplied to a treatment space. The substrate treating method includes: a substrate treating operation of treating a substrate by supplying a treatment liquid from a treatment liquid supply nozzle to the substrate located in an interior space of a housing; and a negative pressure maintaining operation of maintaining the interior space at a negative pressure.

Abstract: Disclosed is an ozone water supplying unit capable of maintaining a stable ozone concentration of ozone water supplied to a substrate, and a substrate treating apparatus including the same. The substrate treating apparatus includes: a chamber for liquid-treating a substrate loaded into a treating space with a liquid containing ozone water; and an ozone water supplying unit for supplying ozone water to the treating space, in which the ozone water supplying unit includes: an ozone water generator for generating ozone water; an ozone water supply line for supplying ozone water generated by the ozone water generator to the treating space; and a cooler provided in the ozone water supply line to cool the ozone water flowing through the ozone water supply line.

Abstract: Disclosed is a method of treating a substrate, the method including: a first pre-wet operation of supplying a first pre-wet liquid to a rotating substrate; a second pre-wet operation of supplying a second pre-wet liquid having a temperature different from the first pre-wet liquid to the rotating substrate, the second pre-wet operation being performed after the first pre-wet operation; and a chemical treatment operation of supplying a chemical that is a liquid of a different type from the first pre-wet liquid and the second pre-wet liquid to the rotating substrate, the chemical treatment operation being performed after the second pre-wet operation.

Abstract: Disclosed is an apparatus for cleaning a component, the apparatus including: a cleaning fluid supply source; a supply line for receiving cleaning fluid from the cleaning fluid supply source and connected with a first port of the component; a discharge line connected with a second port of the component; and a circulation line branched from the discharge line and connected with a third port of the component.

Abstract: Provided are a substrate processing apparatus and a substrate processing method that are capable of maintaining an etch rate of a substrate within a predetermined range by preventing the amount of dissolved oxygen from being concentrated in a specific region of the substrate when a chemical is supplied to a center of the substrate.

Abstract: Provided is a substrate processing apparatus and method capable of improving photoresist removal efficiency by using two different types of chemical liquids. The substrate processing apparatus comprises a substrate support unit for supporting and rotating a substrate; and a spray unit for discharging a substrate processing liquid onto the substrate using a nozzle structure, wherein the nozzle structure comprises a first inlet pipe for providing a first chemical liquid; a second inlet pipe for providing a second chemical liquid; a reaction space module where the first chemical liquid and the second chemical liquid are mixed; and a discharge pipe for discharging a mixture solution of the first chemical liquid and the second chemical liquid into the substrate processing liquid, wherein the first chemical liquid contains ozone gas, and the second chemical liquid contains an OH component.

Abstract: Proposed are a process fluid treatment apparatus capable of decomposing ozone in a process fluid more effectively, and a wafer cleaning apparatus and semiconductor manufacturing equipment including the same. The process fluid treatment apparatus treats the process fluid used for cleaning a wafer in the semiconductor manufacturing equipment, and includes a housing having an inner space configured to contain the process fluid, a spray nozzle configured to spray the process fluid containing ozone into the inner space in the form of mist, and a nozzle heater configured to heat the process fluid passing through the spray nozzle.

Abstract: The present disclosure relates to a filter flushing device and a filter flushing method in which a filter can be flushed and which may include: a main body in which at least one filter can be mounted; a deionized (DI) water supply unit that can selectively supply a plurality of types of DI water having different temperatures to the filter mounted in the main body at desired time intervals, thereby flushing the filter; a drain unit that drains the DI water passing through the filter to the outside of the main body; and a control unit that is electrically connected to the DI water supply unit to apply a control signal to the DI water supply unit so that a temperature and a flow rate of the DI water supplied to the main body through the DI water supply unit can be controlled.

Abstract: Provided are a liquid chemical tank module and a liquid chemical supply apparatus, the liquid chemical tank module including a tank body having a storage space capable of storing a liquid chemical, a gas ejector for ejecting an inert gas into the liquid chemical to reduce dissolved oxygen in the liquid chemical of the tank body, and a controller for applying a control signal to the gas ejector to control a flow rate of the inert gas, wherein the gas ejector includes a gas pipe extending into the storage space and at least partially dipped in the liquid chemical to supply the inert gas from outside of the tank body into the storage space, and a plurality of ejection nozzles along the extension direction of the gas pipe to eject the inert gas into the storage space or the liquid chemical in the storage space.

Abstract: The inventive concept relates to an apparatus for treating a substrate. In an embodiment, the apparatus includes a process chamber having a process space in which the substrate is treated with a fluid in a supercritical state, a support unit that supports the substrate in the process space, a fluid supply unit that supplies the fluid into the process space, a filler member disposed to face the substrate placed on the support unit in the process space, and a measurement unit that measures a state in the process space, the measurement unit being provided in the filler member.

Abstract: A spray unit in which a plurality of nozzle heads are integrally coupled and a substrate treatment apparatus including the spray unit are provided. The substrate treatment apparatus includes: a substrate support unit supporting a substrate and including a spin head, which rotates the substrate; a treatment liquid retrieval unit retrieving substrate treatment liquids used in treating the substrate; and a spray unit including a plurality of nozzle heads and pipes, which are connected to the nozzle heads, and providing the substrate treatment liquids onto the substrate through the nozzle heads and the pipes, wherein the nozzle heads are moved at the same time.

Abstract: Provided are an ozone water decomposition apparatus and method that can decompose ozone water quickly and stably.

Abstract: Disclosed is a method of decomposing ozone in ozone water. According to the present invention, a temperature of ozone water is increased by mixing ozone water with heated water, and the ozone in the ozone water is decomposed into oxygen by the increase in the temperature.

Abstract: The inventive concept relates to an apparatus for treating a substrate. In an embodiment, the apparatus includes a process chamber having a process space in which the substrate is treated with a fluid in a supercritical state, a support unit that supports the substrate in the process space, a fluid supply unit that supplies the fluid into the process space, a filler member disposed to face the substrate placed on the support unit in the process space, and a measurement unit that measures a state in the process space, the measurement unit being provided in the filler member.

Abstract: An apparatus for treating a substrate includes an injecting member having a first nozzle configured to supply a first chemical to the substrate that is mounted on the supporting unit, and a second nozzle configured to supply a second chemical, which is different from the first chemical, to the substrate that is mounted on the supporting unit, and a controller configured to supply the first chemical before supplying the second chemicals and to control the first chemical, which is variable according to a type of thin film on the substrate mounted on the supporting unit, to be supplied.

Abstract: An apparatus for treating a substrate includes an injecting member having a first nozzle configured to supply a first chemical to the substrate that is mounted on the supporting unit, and a second nozzle configured to supply a second chemical, which is different from the first chemical, to the substrate that is mounted on the supporting unit, and a controller configured to supply the first chemical before supplying the second chemicals and to control the first chemical, which is variable according to a type of thin film on the substrate mounted on the supporting unit, to be supplied.

Abstract: Provided are an apparatus and a method of cleaning a substrate. The apparatus includes a substrate supporting unit supporting a substrate, a container surrounding the substrate supporting unit and collecting an organic solvent scattered from the substrate, and a fluid supplying unit provided on one side of the container and spraying a liquid organic solvent with bubbles to the substrate. The fluid supplying unit includes a nozzle head ejecting the organic solvent to the substrate, an organic solvent supplying line supplying the organic solvent from an organic solvent storage tank to the nozzle head, and a bubble providing element provided on the organic solvent supplying line and providing bubbles to the liquid organic solvent.

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a housing defining a space for treating a substrate therein, a spin head supporting and rotating the substrate in the housing, a spray unit including a first nozzle member for spraying a first treating solution on the substrate placed on the spin head, and a controller controlling the spray unit. The controller sprays the first treating solution while moving the first nozzle member between edge and center regions of the substrate and above the substrate. The controller differently adjusts a first height at which the first treating solution is sprayed on the edge region of the substrate and a second height at which the first treating solution is sprayed on the center region of the substrate.