Abstract: A modular continuous vapor deposition system for the fabrication of semiconductor devices having a plurality of deposition modules isolated from each other by isolation modules which prevent the cross contamination of the different processing gases used in the deposition modules. Each of the deposition modules has a flow of a decomposable processing gas therethrough at a desired pressure, and means for generating a continuous glow discharge. The glow discharge decomposes the processing gas to deposit a layer of amorphous semiconductor material on the discrete substrate sheets as they are transported through each of the deposition modules. A plurality of gate valves effectively seal the interfaces between adjacent modules to isolate them from their immediate neighbors and are opened in a predetermined sequence to allow the substrate sheets to be transported from one module to the next. The isolation modules are connected to a vacuum source and a back-fill gas source.

Abstract: An apparatus for depositing thin films on a substrate includes at least one deposition module, a load lock module, a gate valve and a transportation mechanism for moving a substrate between the load lock and the at least one deposition module, the transportation mechanism being adapted to operate within ultra high vacuum conditions. The at least one deposition module is capable of maintaining an ultra high vacuum for depositing materials from reactive gases contained therein on a substrate. The load lock module is connected to the at least one deposition module by a gate valve and is capable of maintaining an ultra high vacuum. The transportation mechanism for moving the substrate between the load lock and the at least one deposition module is adapted to operate under ultra high vacuum conditions so that the substrate can be drawn from the load lock into the deposition module without breaking vacuum in the deposition module and contaminating the reactive gases contained therein.