Abstract: An integrated circuit (IC) package includes a bare die mounted on a substrate, and a conductive routing region including conductive routing structure and an inductor. The conductive routing structure is conductively connected to the bare die, and includes conductive elements formed in multiple conductive routing layers in the conductive routing region. The inductive device includes a winding formed in at least one conductive routing layer of the multiple conductive routing layers.

Abstract: A system and method for a high temperature strain gauge are disclosed. The system may include a mechanical component. The system may also include a strain gauge to measure a strain of the mechanical component. The strain gauge may include a first end of a first support leg mounted on the mechanical component. The strain gauge may also include a first end of a second support leg mounted on the mechanical component opposite the first support leg. The second support leg may be symmetric to the first support leg and have a size substantially similar as the first support leg. The strain gauge may also include a strain sensor between a second end of the first support leg and a second end of the second support leg.

Abstract: In some implementations, a mobile unit may analyze dust at a location. The dust may be analyzed using a machine learning model trained to analyze the dust data to determine presence of ores. The mobile unit may detect a presence of ore at the location based on analyzing the dust data. The mobile unit may generate mining information based on detecting the presence of the ore at the location. The mining information indicates the presence of the ore at the location. The mining information identifies the location. The mobile unit may provide the mining information to a mining machine to cause the mining machine to perform a digging operation at the location.

Abstract: Methods for preparing a donor silicon wafer by applying a SiGe layer on a silicon substrate wafer, depositing a silicon layer on the SiGe layer, etching the silicon layer to form an opening in the silicon layer, wet etching the SiGe layer through the opening in the silicon layer to partially remove SiGe material from the SiGe layer and preserve the silicon layer, depositing a buried oxide layer on the silicon layer, etching the buried oxide layer to form a body bias area, and depositing silicon in the body bias area; bonding a recipient handle wafer to the etched buried oxide layer of the donor silicon wafer to define a BOX; and wet etching the SiGe layer to release the donor silicon wafer from the recipient handle wafer.

Abstract: A system and method are provided for monitoring a factory, comprising during a training period of time, training a machine learning model with training data including a plurality of known spectral representations each of which is designated in the training data as normal or abnormal; and during an operating period of time receiving a first audio sample from a first microphone in an array of microphones suspended above a plurality of mechanical devices, generating a first spectral representation from the first audio sample, providing the first spectral representation to the machine learning model, and determining that the first spectral representation is abnormal.

Abstract: A system includes a first sound detection device control circuitry including a processor and at least one memory device storing logic instructions executable by the processor to perform a process to locate the first sound detection device, including (a) testing a first location for the first sound detection device by receiving sound data generated by the first sound detection device at the first location, analyzing the sound data to identify sound generated by a first sound-generating object, and analyzing a quality of the first location based on the analysis of the sound data, and (b) based on the analyzed quality of the first location, outputting a user notification including at least one of (a) an instruction to relocate the first sound detection device or (b) an instruction to add a second sound detection device in the defined space.

Abstract: There is a method for making a substrate by providing a Si top surface in a plane, and providing a GaN top surface in the plane adjacent the Si top surface, wherein a substrate is formed having a top surface comprising the Si top surface and the GaN top surface. There is a substrate having a Si top surface in a plane, and a GaN top surface in the plane adjacent the Si top surface. There is a package having a substrate with a Si top surface in a plane, and a GaN top surface in the plane adjacent the Si top surface, a CMOS chip attached to the Si top surface, a GaN transistor attached to the GaN top surface, and a metal layer connecting the CMOS chip and the GaN transistor.

Abstract: Systems and methods for imaging a crop field, probing soil of a location of the field based on the imaging of the field to obtain diagnostic data, sampling soil of a location of the field based on the imaging of the field; and spraying the field based on the imaging of the field, the probing soil, or the sampling soil. A system uses a tractor having a spray system, a drone having a tool deployment module comprising a reel and a line, a drone launch pad comprising an imaging module attachable to and detachable from the line, a probing module attachable to and detachable from the line, a sample collection module attachable to and detachable from the line, and drone batteries, a controller to receive diagnostic data from the imaging module, the probing module, or the sample collection module, and to transmit spray instructions to the spray system.

Abstract: A method includes forming a semiconductor layer on a donor substrate, the semiconductor layer comprising a semiconductor material, forming an array of cavities in the semiconductor layer, bonding a transistor substrate to the semiconductor layer, wherein the transistor substrate encloses the array of cavities to form an array of enclosed voids, performing a separation process to separate (a) the transistor substrate and a first portion of the semiconductor layer including the array of enclosed voids from (b) the donor substrate and a second portion of the semiconductor layer, and using the transistor substrate and the first portion of the semiconductor layer to form a high-electron-mobility transistor (HEMT) device with a two-dimensional electron gas (2DEG) channel region over the array of enclosed voids.

Abstract: Systems and methods track a user's line-of-sight relative to objects through a transparent LCD display to provide information about the objects to be displayed on the display proximate the line-of-sight between the object being viewed and the user's head to create an augmented reality environment for the user. A method comprising: determining a position of an object; determining a position of a transparent display; determining a line-of-sight extending between a user's eye and the object through the transparent display; determining where the line-of-sight intersects the transparent display; and displaying object information corresponding to the object via the transparent display proximate where the line-of-sight intersects the transparent display.

Abstract: A system and method for a highly integrated environmental sensor and process for manufacturing said sensor is disclosed. Examples of the present disclosure may include an integrated sensor. The integrated sensor may include a redistribution layer (RDL). The integrated sensor may also include a control circuit coupled to the RDL. The integrated sensor may additionally include an analog front-end circuit coupled to the RDL and the control circuit. The integrated sensor may further include an environmental sensor coupled to the analog front-end circuit. The environmental sensor may include a first sensing element deposited in a first trench etched on the RDL using inkjet material deposition.

Abstract: An example of the teachings herein includes a system comprising: a sensor element; a mechanical transducer to vibrate the sensor element; and a heating element to provide localized heat to the sensor element. The heating element and the mechanical transducer operate in concert to raise a temperature of the sensor element and vibrate the sensor element to dislodge contaminants from a surface of the sensor element.

Abstract: An integrated device comprising a buried oxide layer within a trench within a top surface of a substrate. A silicon layer formed over the buried oxide layer and the top surface of the substrate.

Abstract: A method includes forming a metal cathode on a substrate, anodizing an outer surface of the metal cathode to form an anodized porous layer, and forming a metal anode over the anodized porous layer, wherein the anodized porous layer defines a dielectric layer between the metal anode and the metal cathode, and wherein the metal anode, the anodized porous layer, and the metal cathode define a sensor.

Abstract: To protect chip intellectual property disclosed to supply chain foundries and assembly sites, an aspect stores chip logic for a chip function in an interposer. A method provides an interposer substrate; provides a data storage device in the interposer substrate and comprising chip logic to perform a chip function; and provides a via or connection in the interposer substrate between a bond pad and the data storage device. A system has an interposer comprising: an interposer substrate, a data storage device in the interposer substrate and comprising chip logic to perform a chip function; and a chip in signal communication with the interposer, wherein the chip does not comprise the chip logic, wherein the chip is to perform a function via the chip logic of the interposer.

Abstract: A semiconductor device having a front and a back and comprising a package substrate, an epoxy base layer applied to a back side of the package substrate, and a planar inductor in the epoxy base layer is etched to make a trench at the back of the semiconductor device in the epoxy base layer adjacent the planar inductor, and a thermal interface material is put in the trench, whereby a heat transfer antenna is formed. A semiconductor device has a package substrate having a front and a back; an epoxy base layer applied to a back side of the package substrate, a planar inductor at the back of the package substrate in the epoxy base layer, and a heat transfer antenna at the back of the package substrate in the epoxy base layer.

Abstract: Vapor cells may include a body defining a cavity within the body. The body may include a first substrate bonded to a second substrate at an interface, a first window located on a side of the first substrate opposite the second substrate, and a second window located on a side of the second substrate opposite the first substrate. The first substrate may include a first porous volume extending around a circumference of the cavity and located proximate to the first window. The second substrate may include a second porous volume extending around the circumference of the cavity, the second porous volume located proximate to the first substrate, the second porous volume located distal from the second window.

Abstract: An apparatus includes a body having walls defining a cavity therebetween, the cavity containing an amount of a subject material therein. A channel structure including a channel substrate with channels having a substantially uniform width formed therein is disposed along a portion of the walls of the body, and a liner material is disposed over portions of internal surfaces of the channels.

Abstract: An electronic device includes an integrated circuit package including a die mounted on a die carrier, a mold structure at least partially encapsulating the mounted die, and a heat transfer chimney formed on the die. The heat transfer chimney extends at least partially through the mold structure to transfer heat away from the die. The heat transfer chimney is formed from a thermally conductive compound including thermally conductive nanoparticles.

Abstract: A High-Electron-Mobility-Transistor that may include a substrate. A first buffer layer formed on the substrate. A barrier layer formed on the first buffer layer. A doped structure surrounded by the barrier layer. A second buffer layer formed on the barrier layer. A spacer formed on a portion of the doped structure. An insulating layer formed over the second buffer layer. A gate electrode formed within the spacer through the insulating layer, through the second buffer layer and partially into the barrier layer, the gate electrode connected to the doped structure. A drain terminal formed at a first side of the gate electrode. A source terminal formed at a second side of the gate electrode.