Patents by Inventor Bon-Keun Jun

Bon-Keun Jun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Poly-emitter type bipolar junction transistor, bipolar CMOS DMOS device, and manufacturing methods of poly-emitter type bipolar junction transistor and bipolar CMOS DMOS device
    Patent number: 8173500
    Abstract: A poly-emitter type bipolar transistor includes a buried layer formed over an upper portion of a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, a collector area formed on the epitaxial layer and connected to the buried layer, a base area formed at a part of an upper portion of the epitaxial layer, and a poly-emitter area formed on a surface of the semiconductor substrate in the base area and including a polysilicon material. A BCD device includes a poly-emitter type bipolar transistor having a poly-emitter area including a polysilicon material and at least one of a CMOS and a DMOS formed on a single wafer together with the poly-emitter type bipolar transistor.
    Type: Grant
    Filed: August 24, 2009
    Date of Patent: May 8, 2012
    Assignee: Dongbu HiTek Co., Ltd.
    Inventor: Bon-Keun Jun
  • POLY-EMITTER TYPE BIPOLAR JUNCTION TRANSISTOR, BIPOLAR CMOS DMOS DEVICE, AND MANUFACTURING METHODS OF POLY-EMITTER TYPE BIPOLAR JUNCTION TRANSISTOR AND BIPOLAR CMOS DMOS DEVICE
    Publication number: 20100051946
    Abstract: A poly-emitter type bipolar transistor includes a buried layer formed over an upper portion of a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, a collector area formed on the epitaxial layer and connected to the buried layer, a base area formed at a part of an upper portion of the epitaxial layer, and a poly-emitter area formed on a surface of the semiconductor substrate in the base area and including a polysilicon material. A BCD device includes a poly-emitter type bipolar transistor having a poly-emitter area including a polysilicon material and at least one of a CMOS and a DMOS formed on a single wafer together with the poly-emitter type bipolar transistor.
    Type: Application
    Filed: August 24, 2009
    Publication date: March 4, 2010
    Inventor: Bon-Keun Jun