Abstract: A method for forming a pattern of carbon nanotubes includes forming a pattern on a surface-treated substrate using a photolithographic process, and laminating carbon nanotubes thereon using a chemical self-assembly process so as to form the carbon nanotubes in a monolayer or multilayer structure. A monolayer or multilayer carbon nanotube pattern may be easily formed on the substrate, e.g., glass, a silicon wafer and a plastic. Accordingly, the method can be applied to form patterned carbon nanotube layers having a high conductivity, and thus will be usefully utilized in the manufacturing processes of energy storages, for example, solar cells and batteries, flat panel displays, transistors, chemical and biological sensors, semiconductor devices and the like.

Abstract: An organic semiconductor polymer for a thin film transistor, the polymer comprising a unit having n-type semiconductor properties and a unit having p-type semiconductor properties in the polymer backbone, and an organic thin film transistor using the same.

Abstract: Disclosed is an organic gate insulating film and an organic thin film transistor using the same, in which a photo-alignment group is introduced into an organic insulating polymer, so that an organic active film has superior alignment, thereby increasing mobility. Further, the organic active film has a larger grain size, enhancing transistor characteristics.