Abstract: A semiconductor system comprises a nonvolatile memory storing a patch code, the patch code comprising a unique identifier (ID). An internal read only memory (IROM) stores a boot code, the boot code comprising a patch code execution function for executing the patch code and a linked register (LR) address for specifying a storage location where the patch code is to be executed. A static random access memory (SRAM) stores a copy of the patch code at the storage location, the copy of the patch code including the unique ID. A processor executes the copy of the patch code from the storage location. The processor executes the copy of the patch code stored at the storage location in the SRAM according to the comparison result.

Abstract: A semiconductor system comprises a nonvolatile memory storing a patch code, the patch code comprising a unique identifier (ID). An internal read only memory (IROM) stores a boot code, the boot code comprising a patch code execution function for executing the patch code and a linked register (LR) address for specifying a storage location where the patch code is to be executed. A static random access memory (SRAM) stores a copy of the patch code at the storage location, the copy of the patch code including the unique ID. A processor executes the copy of the patch code from the storage location. The processor executes the copy of the patch code stored at the storage location in the SRAM according to the comparison result.

Abstract: A memory controller includes an digitally programmable delay unit having a selectable delay time receiving a read-enable signal and outputting a delayed read-enable signal. The delay time is selected in response to an externally applied delay-control signal. A sampling unit in the memory controller outputs data received from a separate memory, in synchronization with the delayed enable signal. The delay time may be a multiple of the period of a clock signal.

Abstract: A memory controller includes an digitally programmable delay unit having a selectable delay time receiving a read-enable signal and outputting a delayed read-enable signal. The delay time is selected in response to an externally applied delay-control signal. A sampling unit in the memory controller outputs data received from a separate memory, in synchronization with the delayed enable signal. The delay time may be a multiple of the period of a clock signal.

Abstract: A method and apparatus for detecting a free page of a memory device, and a method and apparatus for decoding an error correction code by using the method and apparatus for detecting a free page are provided. Free page data read from the memory is converted into a converted codeword for inclusion as an element of an error correction code field. The converted codeword is compared to an initially set target codeword to detect an amount of non-identical bits. A page read from the memory is determined to be a free page when the amount of non-identical bits is equal to or less than an initially set threshold value.

Abstract: A method and apparatus for detecting a free page of a memory device, and a method and apparatus for decoding an error correction code by using the method and apparatus for detecting a free page are provided. Free page data read from the memory is converted into a converted codeword for inclusion as an element of an error correction code field. The converted codeword is compared to an initially set target codeword to detect an amount of non-identical bits. A page read from the memory is determined to be a free page when the amount of non-identical bits is equal to or less than an initially set threshold value.

Abstract: A method and apparatus for detecting a free page of a memory device, and a method and apparatus for decoding an error correction code by using the method and apparatus for detecting a free page are provided. Free page data read from the memory is converted into a converted codeword for inclusion as an element of an error correction code field. The converted codeword is compared to an initially set target codeword to detect an amount of non-identical bits. A page read from the memory is determined to be a free page when the amount of non-identical bits is equal to or less than an initially set threshold value.

Abstract: Provided are a method for accessing a flash memory device and a memory system including the same. In the method, first and second storage regions of a memory block of the flash memory device are set to free blocks, and each of the first and second storage regions are set to a data block independently.

Abstract: A method and apparatus for detecting a free page of a memory device, and a method and apparatus for decoding an error correction code by using the method and apparatus for detecting a free page are provided. Free page data read from the memory is converted into a converted codeword for inclusion as an element of an error correction code field. The converted codeword is compared to an initially set target codeword to detect an amount of non-identical bits. A page read from the memory is determined to be a free page when the amount of non-identical bits is equal to or less than an initially set threshold value.

Abstract: A memory controller includes an digitally programmable delay unit having a selectable delay time receiving a read-enable signal and outputting a delayed read-enable signal. The delay time is selected in response to an externally applied delay-control signal. A sampling unit in the memory controller outputs data received from a separate memory, in synchronization with the delayed enable signal. The delay time may be a multiple of the period of a clock signal.