Abstract: A display device according to an embodiment includes: a substrate; a transistor that is disposed on the substrate; a light emitting diode that is disposed on the substrate, and connected to the transistor; and a passivation layer that is disposed between the transistor and the light emitting diode, wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm.

Abstract: A display device according to an embodiment includes: a substrate; a transistor that is disposed on the substrate; a light emitting diode that is disposed on the substrate, and connected to the transistor; and a passivation layer that is disposed between the transistor and the light emitting diode, wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm.

Abstract: A method for communicating overlay networks according to an embodiment of the present disclosure includes acquiring a first authentication information from a first authentication server by the first terminal, establishing a connection with a first relay node based on the first authentication information by the first terminal, acquiring a second authentication information from a second authentication server via the first relay node by the first terminal, and communicating with the second terminal by way of the first relay node using the second authentication information by the first terminal.

Abstract: A display device includes: a substrate; a first signal line and a second signal line disposed on the substrate; and an interlayer-insulating layer disposed between the first signal line and the second signal line. The interlayer-insulating layer includes a first portion and a second portion having different heights measured from a surface of the substrate along a first direction that is perpendicular to the surface of the substrate, an upper surface of the first portion of the interlayer-insulating layer is flat, a surface of the second portion of the interlayer-insulating layer is flat, a height of the first portion is lower than a height of the second portion, the interlayer-insulating layer defines a contact hole, and the contact hole is disposed in the first portion of the interlayer-insulating layer.

Abstract: A method of fabricating a display device includes: preparing a substrate including emission areas and a non-emission area between the emission areas; forming a bank on the non-emission area to a first height; forming light conversion patterns on the emission areas to a height equal to or less than the first height; polishing a surface of a light conversion layer including the bank and the light conversion patterns so that the surface of the light conversion layer is flat; and forming a filler layer on a surface of the substrate on which the light conversion layer is provided. The polishing of the light conversion layer includes planarizing the surface of the light conversion layer so that the bank and the light conversion patterns have a second height through chemical mechanical polishing utilizing a metallic slurry.

Abstract: A display device according to an embodiment includes: a substrate; a transistor that is disposed on the substrate; a light emitting diode that is disposed on the substrate, and connected to the transistor; and a passivation layer that is disposed between the transistor and the light emitting diode, wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm.

Abstract: The present invention relates to stem cells in which a gene that activates signaling is introduced and to a method for proliferating the stem cells. More specifically, the invention relates to a method of significantly increasing the ability of stem cells to proliferate, either by transfecting stem cells with the Notch intracellular domain (NICD) to activate the Notch signaling pathway, or by transfecting stem cells with the c-MET gene and treating the transfected stem cells with the HGF ligand protein to activate the c-MET/HGF signaling pathway. According to the present invention, as a result of activating the Notch signaling pathway or the c-MET/HGF signaling pathway, stem cells having an excellent ability to proliferate can be produced in large amounts. Particularly, since neural stem cells which have been difficult to culture in vitro can be proliferated in large amounts, thus the neural stem cells will be more useful for the preparation of cell therapeutic agents for treating cranial nerve diseases.

Abstract: The present invention relates to stem cells in which a gene that activates signaling is introduced and to a method for proliferating the stem cells. More specifically, the invention relates to a method of significantly increasing the ability of stem cells to proliferate, either by transfecting stem cells with the Notch intracellular domain (NICD) to activate the Notch signaling pathway, or by transfecting stem cells with the c-MET gene and treating the transfected stem cells with the HGF ligand protein to activate the c-MET/HGF signaling pathway. According to the present invention, as a result of activating the Notch signaling pathway or the c-MET/HGF signaling pathway, stem cells having an excellent ability to proliferate can be produced in large amounts. Particularly, since neural stem cells which have been difficult to culture in vitro can be proliferated in large amounts, thus the neural stem cells will be more useful for the preparation of cell therapeutic agents for treating cranial nerve diseases.

Abstract: The present invention relates to stem cells in which a gene that activates signaling is introduced and to a method for proliferating the stem cells. More specifically, the invention relates to a method of significantly increasing the ability of stem cells to proliferate, either by transfecting stem cells with the Notch intracellular domain (NICD) to activate the Notch signaling pathway, or by transfecting stem cells with the c-MET gene and treating the transfected stem cells with the HGF ligand protein to activate the c-MET/HGF signaling pathway. According to the present invention, as a result of activating the Notch signaling pathway or the c-MET/HGF signaling pathway, stem cells having an excellent ability to proliferate can be produced in large amounts. Particularly, since neural stem cells which have been difficult to culture in vitro can be proliferated in large amounts, thus the neural stem cells will be more useful for the preparation of cell therapeutic agents for treating cranial nerve diseases.

Abstract: The present invention relates to stem cells in which a gene that activates signaling is introduced and to a method for proliferating the stem cells. More specifically, the invention relates to a method of significantly increasing the ability of stem cells to proliferate, either by transfecting stem cells with the Notch intracellular domain (NICD) to activate the Notch signaling pathway, or by transfecting stem cells with the c-MET gene and treating the transfected stem cells with the HGF ligand protein to activate the c-MET/HGF signaling pathway. According to the present invention, as a result of activating the Notch signaling pathway or the c-MET/HGF signaling pathway, stem cells having an excellent ability to proliferate can be produced in large amounts. Particularly, since neural stem cells which have been difficult to culture in vitro can be proliferated in large amounts, thus the neural stem cells will be more useful for the preparation of cell therapeutic agents for treating cranial nerve diseases.