Patents by Inventor Bong Il Yi

Bong Il Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride semiconductor light emitting device including electrodes of a multilayer structure
    Patent number: 7868344
    Abstract: A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.
    Type: Grant
    Filed: September 8, 2006
    Date of Patent: January 11, 2011
    Assignee: Samsung LED Co., Ltd.
    Inventors: Pil Geun Kang, Bong Il Yi, Jae Ho Han, Dong Min Jeon
  • NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING ELECTRODES OF A MULTILAYER STRUCTURE
    Publication number: 20100308366
    Abstract: A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.
    Type: Application
    Filed: September 8, 2006
    Publication date: December 9, 2010
    Inventors: Pil Geun Kang, Bong Il Yi, Jae Ho Han, Dong Min Jeon
  • Flip chip type nitride semiconductor light emitting device
    Patent number: 7297988
    Abstract: The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.
    Type: Grant
    Filed: December 28, 2005
    Date of Patent: November 20, 2007
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Seung Wan Chae, Suk Kil Yoon, Kun Yoo Ko, Hyun Wook Shim, Bong Il Yi