Abstract: A substrate processing method, involving etching a silicon nitride layer selectively in a substrate where a silicon oxide layer and the silicon nitride layer are stacked, includes: wet-etching the silicon nitride layer with a phosphoric acid-based etching solution; and dry-etching a regrowth oxide, which is formed on a surface of the silicon oxide layer in the wet etching step, with an etching gas.

Abstract: The present invention relates to a time-temperature indicating module that causes a spread material whose degree of diffusion changes with temperature change to be absorbed and diffused into a diffusion material through induction of a crack, guides a diffusion direction of the spread material through a guide line printed in a longitudinal direction of the diffusion material and also enables a clear start time point of diffusion to be displayed.

Abstract: There is provided a method of processing a substrate comprising an ONO stack in which a silicon oxide layer and a silicon nitride layer are stacked alternately and repeatedly on the substrate. The method includes: (a) primarily dry-etching silicon nitride layers of the ONO stack; (b) producing oxygen radicals and processing silicon oxide layers of the ONO stack with the oxygen radicals; and (c) secondarily dry-etching the silicon nitride layers of the ONO stack.

Abstract: A method of processing a substrate on which films comprising a first silicon oxide film, a silicon nitride film and a second silicon oxide film are stacked from an outermost side, includes: a first etching step of etching the first silicon oxide film; and a second etching step of etching the silicon nitride film and the second silicon oxide film. In the first etching step, a residual layer of the first silicon oxide film is left. In the second etching step, the residual layer of the first silicon oxide film, the silicon nitride film and the second silicon oxide film are etched together.

Abstract: The present invention relates to a substrate processing method for selectively etching a silicon nitride layer on a substrate on which silicon oxide layers and silicon nitride layers are alternately stacked, the method including plasma etching the silicon nitride layers using plasma of a plurality of gases, wherein the plurality of gases include a first gas containing fluorine excluding nitrogen trifluoride (NF3) and a second gas containing hydrogen, and the etch profile in the thickness direction of the silicon nitride layers is controlled by adjusting the atomic ratio of fluorine to hydrogen included in the plurality of gases.

Abstract: The present invention relates to the time-temperature indicating module which allows the user to trigger the bursting of the starting member with a simple motion and generate a crack so that the spread material interposed inside spreads via the crack. The present invention also relates to the manufacturing method of the time-temperature indicating module that strengthens a sealed section of the time-temperature indicating module using laminating by heat sealing to prevent the spread material from leaking or flowing out.

Abstract: The present invention relates to a method for selectively etching a silicon oxide film by using a low-temperature process in a semiconductor manufacturing process and, more specifically, the method comprises the steps of: putting, into a reactor, a substrate having a silicon oxide film and a silicon nitride film formed thereon; setting process conditions including a process temperature having a range of 0° C. to 30° C. below zero; and supplying process gas into the reactor under the process conditions so as to selectively etch the silicon oxide film with respect to the silicon nitride film.

Abstract: The present invention relates to the time-temperature indicating module which allows the user to trigger the bursting of the starting member with a simple motion and generate a crack so that the spread material interposed inside spreads via the crack. The present invention also relates to the manufacturing method of the time-temperature indicating module that strengthens a sealed section of the time-temperature indicating module using laminating by heat sealing to prevent the spread material from leaking or flowing out.

Abstract: A method of forming a thin film pattern includes: forming a thin film on a substrate; forming an amorphous carbon layer including first and second carbon layers on the thin film, wherein the first carbon layer is formed by one of a spin-on method and a plasma enhanced chemical vapor deposition (PECVD) method and the second carbon layer is formed by a physical vapor deposition (PVD) method; forming a hard mask layer on the amorphous carbon layer; forming a PR pattern on the hard mask layer; forming a hard mask pattern by etching the hard mask layer using the PR pattern as an etch mask; forming an amorphous carbon pattern including first and second carbon patterns by etching the amorphous carbon layer using the hard mask pattern as an etch mask; and forming a thin film pattern by etching the thin film using the amorphous carbon pattern.

Abstract: A method of forming a thin film pattern includes: forming a thin film on a substrate; forming an amorphous carbon layer including first and second carbon layers on the thin film, wherein the first carbon layer is formed by one of a spin-on method and a plasma enhanced chemical vapor deposition (PECVD) method and the second carbon layer is formed by a physical vapor deposition (PVD) method; forming a hard mask layer on the amorphous carbon layer; forming a PR pattern on the hard mask layer; forming a hard mask pattern by etching the hard mask layer using the PR pattern as an etch mask; forming an amorphous carbon pattern including first and second carbon patterns by etching the amorphous carbon layer using the hard mask pattern as an etch mask; and forming a thin film pattern by etching the thin film using the amorphous carbon pattern.