Abstract: A recycled polishing pad includes an upper layer pad and a supplementary pad. The upper layer pad includes a first surface and a second surface opposite to the first surface. The first surface has a plurality of first grooves and the second surface has a plurality of second grooves. The upper layer pad further includes a connecting body connecting the first grooves and the second grooves. The supplementary pad is in contact with the second surface of the upper layer pad. A depth of each of the first grooves is less than a depth of each of the second grooves.

Abstract: A recycled polishing pad includes an upper layer pad and a supplementary pad. The upper layer pad includes a first surface and a second surface opposite to the first surface. The first surface has a plurality of first grooves and the second surface has a plurality of second grooves. The upper layer pad further includes a connecting body connecting the first grooves and the second grooves. The supplementary pad is in contact with the second surface of the upper layer pad. A depth of each of the first grooves is less than a depth of each of the second grooves.

Abstract: A polishing pad compound and a polishing pad, the polishing pad compound including a pre-polymer; and a hardener, wherein the pre-polymer includes about 45 wt % to about 50 wt % of a polyol, about 5 wt % to about 25 wt % of a hardness regulator, and a balance of an isocyanate.

Abstract: An apparatus for manufacturing a polishing pad includes a housing including a body, an interconnection portion, and a discharging portion, and a stirrer located in the housing, the stirrer mixing a polishing pad composition and a pore forming material with each other. A diameter of the discharging portion is in a range of about 9 mm to about 16 mm.

Abstract: Polishing pad and method of manufacturing the same, the method, whereby materials for forming a polishing layer are mixed and solidified by a chemical reaction so as to manufacture the polishing pad, the method including: grinding organic materials by using a physical method so as to form micro-organic particles; mixing the micro-organic particles formed in the operation with the materials for forming the polishing layer; mixing at least one selected from the group consisting of inert gas, a capsule type foaming agent, and a chemical foaming agent that are capable of controlling sizes of pores, with the mixture in the operation so as to form gaseous pores; performing gelling and hardening of the mixture generated in the operation so as to form a polishing layer; and processing the polishing layer so as to distribute open pores defined by opening gaseous pores on a surface of the polishing layer.

Abstract: An apparatus for manufacturing a polishing pad includes a housing including a body, an interconnection portion, and a discharging portion, and a stirrer located in the housing, the stirrer mixing a polishing pad composition and a pore forming material with each other. A diameter of the discharging portion is in a range of about 9 mm to about 16 mm.

Abstract: Polishing pad and method of manufacturing the same, the method including: (a) mixing materials for forming a polishing layer; (b) mixing at least two from among inert gas, a capsule type foaming agent, a chemical foaming agent, and liquid microelements that are capable of controlling sizes of pores, with the mixture in (a) so as to form two or more types of pores; (c) performing gelling and hardening of the mixture generated in (b) so as to form a polishing layer including the two or more types of pores; and (d) processing the polishing layer so as to distribute micropores defined by opening the two or more types of pores on a surface of the polishing layer.

Abstract: A polishing pad compound and a polishing pad, the polishing pad compound including a pre-polymer; and a hardener, wherein the pre-polymer includes about 45 wt % to about 50 wt % of a polyol, about 5 wt % to about 25 wt % of a hardness regulator, and a balance of an isocyanate.

Abstract: A slurry composition includes an acidic aqueous solution and one or both of, an amphoteric surfactant and a glycol compound. Examples of the amphoteric surfactant include a betaine compound and an amino acid compound, and examples of the amino acid compound include lysine, proline and arginine. Examples of the glycol compound include diethylene glycol, ethylene glycol and polyethylene glycol.

Abstract: A slurry composition for a chemical mechanical processing process includes about 0.05 to about 0.3 percent by weight of a ceria abrasive, about 0.005 to about 0.04 percent by weight of an anionic surfactant, about 0.0005 to about 0.003 percent by weight of a polyoxyethylene-based nonionic surfactant, about 0.2 to about 1.0 percent by weight of a salt of polyacrylic acid having an average molecular weight substantially greater than a molecular weight of the anionic surfactant, and a remainder of water. In addition, a method of polishing an object layer and a method of manufacturing a semiconductor device using the slurry composition are also provided.

Abstract: The present invention relates to a conditioner device for polishing pad and a chemical mechanical polishing (CMP) apparatus having the same. The conditioner device of the present invention comprises a rotable support plate including a support plate surface comprising a center area located about the rotational axis of the support plate, a mid area surrounding the center area, and a peripheral area surrounding the mid area, a plurality of conditioning zones located within a portion of the mid area of the support plate surface. A plurality of hard particles which are densely arranged within the conditioning zones and are attached to the support plate surface. A plurality of passages defined by the conditioning zones within which a slurry flows, the passages occupying a portion of the mid area which is not occupied by the conditioning zones, the center area and the peripheral area.

Abstract: A pad conditioner of semiconductor wafer polishing apparatus and a pad conditioner manufacturing method thereof are provided with a uniform conditioning for a polishing pad of a polishing apparatus, the polishing apparatus being for evenly planarizing a metal layer formed on the surface of wafer in a semiconductor device manufacturing processor. The pad conditioner may include a substrate constructed of a flat plate of disk shape, a coating part formed with a given thickness on the substrate, and a plurality of protrusion parts formed on the coating part, the plurality of protrusion parts having a plurality of polishing members based on the same size in a predetermined grouping or pattern.

Abstract: A slurry composition includes an acidic aqueous solution and one or both of, an amphoteric surfactant and a glycol compound. Examples of the amphoteric surfactant include a betaine compound and an amino acid compound, and examples of the amino acid compound include lysine, proline and arginine. Examples of the glycol compound include diethylene glycol, ethylene glycol and polyethylene glycol.

Abstract: A slurry composition includes an acidic aqueous solution and one or both of, an amphoteric surfactant and a glycol compound. Examples of the amphoteric surfactant include a betaine compound and an amino acid compound, and examples of the amino acid compound include lysine, proline and arginine. Examples of the glycol compound include diethylene glycol, ethylene glycol and polyethylene glycol.

Abstract: A slurry composition for a chemical mechanical processing process includes about 0.05 to about 0.3 percent by weight of a ceria abrasive, about 0.005 to about 0.04 percent by weight of an anionic surfactant, about 0.0005 to about 0.003 percent by weight of a polyoxyethylene-based nonionic surfactant, about 0.2 to about 1.0 percent by weight of a salt of polyacrylic acid having an average molecular weight substantially greater than a molecular weight of the anionic surfactant, and a remainder of water. In addition, a method of polishing an object layer and a method of manufacturing a semiconductor device using the slurry composition are also provided.

Abstract: Methods of polishing an object layer and for manufacturing a non-volatile memory device that incorporates such a polished object layer using a specially formulated slurry composition are disclosed. The slurry compositions include a ceria abrasive, a nonionic surfactant having a hydrophilic-lipophilic balance (HLB) value in a range of about 12 to about 17, and water. The nonionic surfactant is selected such that it may be adsorbed onto a hydrophobic layer to protect the hydrophobic layer from the ceria abrasive during a polishing operation. The slurry compositions may have a relatively high polishing rate for a hydrophilic layer and at the same time a relatively low polishing rate for a hydrophobic layer. Thus, the slurry compositions may be applied during a process for polishing the hydrophilic layer using the hydrophobic layer as a polishing stop layer.

Abstract: A pad conditioner may include a surface having a first region including a portion having relatively irregular shaped and friable polishing particles, and a second region including a portion having relatively regular shaped and tough polishing particles. The relatively regular shaped and tough polishing particles may be provided on the edge portion of the surface and the relatively irregular shaped and friable polishing particles may be provided on the center portion of the surface.

Abstract: The present invention relates to a conditioner device for polishing pad and a chemical mechanical polishing (CMP) apparatus having the same. The conditioner device of the present invention comprises a rotable support plate including a support plate surface comprising a center area located about the rotational axis of the support plate, a mid area surrounding the center area, and a peripheral area surrounding the mid area, a plurality of conditioning zones located within a portion of the mid area of the support plate surface. A plurality of hard particles which are densely arranged within the conditioning zones and are attached to the support plate surface. A plurality of passages defined by the conditioning zones within which a slurry flows, the passages occupying a portion of the mid area which is not occupied by the conditioning zones, the center area and the peripheral area.

Abstract: A polishing pad of a CMP apparatus has a plurality of pores. A characteristic associated with the pores, such as average size or pore density, varies substantially from region to region of the pad across the pad in a diametral direction of the pad. The polishing pad can be designed and manufactured using sample pads whose pore characteristics differ from each other. CMP test processes are performed in which the sample pads are used to polish test wafers, and the rates at which the test wafers are polished are measured and stored in a database. The polishing pad is fabricated using data from the database so that a chemical mechanical polishing apparatus employing the pad will polish wafers with a high degree of uniformity. The database can be used to select sample pads from a stockpile. Sections of the sample pads are cut out, respectively, and fastened to one another.

Abstract: A pad conditioner may include a surface having a first region including a portion having relatively irregular shaped and friable polishing particles, and a second region including a portion having relatively regular shaped and tough polishing particles. The relatively regular shaped and tough polishing particles may be provided on the edge portion of the surface and the relatively irregular shaped and friable polishing particles may be provided on the center portion of the surface.