Abstract: A display device comprises pixels including a first sub-pixel, a second sub-pixel, a third sub-pixel, a fourth sub-pixel, and a fifth sub-pixel, each sub-pixel including an emission area, wherein the first sub-pixel and the fourth sub-pixel emit light of a first color, the second sub-pixel and the fifth sub-pixel emit light of a second color, the third sub-pixel emits light of a third color, a first emission area of the first sub-pixel, a second emission area of the second sub-pixel, a fourth emission area of the fourth sub-pixel, and a fifth emission area of the fifth sub-pixel surround a third emission area of the third sub-pixel, and the third emission area of the third sub-pixel has four interior angles equal to or greater than about 180 degrees, and another four interior angles equal to or less than about 90 degrees.

Abstract: An indoor lighting device of a vehicle includes: a substrate, a plurality of light sources assembled with the substrate to be arranged in a row, and a light guide panel including: a plurality of incidence parts such that light emitted by the light sources is incident thereupon, a diffusion area part provided behind the incidence parts to diffuse and reflect the light incident upon the incidence parts, a visual field area part provided behind the diffusion area part to emit the light diffused and reflected by the diffusion area part outside, and light diffusion holes provided behind the respective incidence parts. In particular, each of the light diffusion holes is surrounded by a transmission plane, a pair of reflection planes and a diffusion plane.

Abstract: A semiconductor memory device comprises, a substrate, a mold structure including gate electrodes and mold insulating films alternately stacked on the substrate, and a channel structure penetrating the mold structure, wherein the channel structure comprises a semiconductor pattern and a dielectric film on the semiconductor pattern, wherein the dielectric film comprises a first crystalline film in contact with the gate electrodes and a second crystalline film between the first crystalline film and the semiconductor pattern, wherein the first crystalline film includes a first matrix and a first impurity and the second crystalline film includes a second matrix and a second impurity, wherein each of the first matrix and the second matrix comprises at least one of HfO2, HfxZr1-xO2 (0.5<x<1) and Hf1-yZryO2 (0.5<y<1), and wherein each of the first impurity and the second impurity is 10 at % or less of the first crystalline film and second crystalline film, respectively.

Abstract: A display device according to an embodiment includes: a substrate; a transistor that is disposed on the substrate; a light emitting diode that is disposed on the substrate, and connected to the transistor; and a passivation layer that is disposed between the transistor and the light emitting diode, wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm.

Abstract: A method for fabricating the OLED including a color conversion layer using roll-to-roll processing is provided. To elaborate, the method for fabricating an OLED comprising: bonding an OLED and an inorganic phosphor to each other through roll-to-roll processing is provided, wherein the inorganic phosphor is provided as a color conversion layer.

Abstract: A method for fabricating the OLED including a color conversion layer using roll-to-roll processing is provided. To elaborate, the method for fabricating an OLED comprising: bonding an OLED and an inorganic phosphor to each other through roll-to-roll processing is provided, wherein the inorganic phosphor is provided as a color conversion layer.