Abstract: A reforming method may include: reforming a hydrocarbon with steam plasma to generate a first synthetic gas, which includes hydrogen and carbon dioxide, from the hydrocarbon; cooling the first synthetic gas to a predetermined temperature, removing water vapor included in the first synthetic gas, and separating hydrogen from the first synthetic gas; reforming the first synthetic gas, from which hydrogen is separated, and a hydrocarbon with steam plasma to generate hydrogen, and generating a second synthetic gas in which carbon dioxide is decreased; and cooling the second synthetic gas to a predetermined temperature, removing water vapor included in the second synthetic gas, and separating hydrogen from the second synthetic gas.

Abstract: Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.

Abstract: A reforming method may include: reforming a hydrocarbon with steam plasma to generate a first synthetic gas, which includes hydrogen and carbon dioxide, from the hydrocarbon; cooling the first synthetic gas to a predetermined temperature, removing water vapor included in the first synthetic gas, and separating hydrogen from the first synthetic gas; reforming the first synthetic gas, from which hydrogen is separated, and a hydrocarbon with steam plasma to generate hydrogen, and generating a second synthetic gas in which carbon dioxide is decreased; and cooling the second synthetic gas to a predetermined temperature, removing water vapor included in the second synthetic gas, and separating hydrogen from the second synthetic gas.

Abstract: There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor wafer processing device comprising a chamber, and, a showerhead configured to supply a gas into the chamber, wherein the showerhead includes, a plate, a plurality of first spray hole groups in a first row from a center of the plate, and a second spray hole group in a second row outside the first row, wherein each of the first spray hole groups includes a plurality of first spray holes, and when L is an average value of distances from the center of the plate to each spray hole of each of the first spray hole groups, the number of first spray holes where a distance from the center of the plate is smaller than L is more than the number of first spray holes where the distance from the center of the plate is greater than L.

Abstract: Disclosed is a display apparatus including an LED module having a first fastening member, a front bracket having a second fastening member on which the LED module is mounted by an attractive force generated between the first and second fastening members, and at least one level adjusting member disposed on the LED module and configured to adjust a level difference between the LED module and another adjacent LED module.

Abstract: Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.

Abstract: Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.

Abstract: Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.

Abstract: Disclosed is a display apparatus including an LED module having a first fastening member, a front bracket having a second fastening member on which the LED module is mounted by an attractive force generated between the first and second fastening members, and at least one level adjusting member disposed on the LED module and configured to adjust a level difference between the LED module and another adjacent LED module.

Abstract: A fracturing device using a shock wave of a plasma reaction includes a partition unit for partitioning a reaction space such that a reaction medium is accommodated therein, by sealing a part having a plurality of through-holes among well casing of a gas well provided at shale rock layer so as to extract shale gas and a probe for applying energy to the reaction medium such that the reaction medium generates shock wave by a plasma reaction as the energy is applied to the reaction medium accommodated inside the reaction space, so as to propagate shock wave to the shale rock layer.

Abstract: Provided is a fracturing device using a shock wave of a plasma reaction, the fracturing device comprising: a partition unit for partitioning a reaction space such that a reaction medium is accommodated therein, by sealing a part having a plurality of through-holes among well casing of a gas well provided at shale rock layer so as to extract shale gas; and a probe for applying energy to the reaction medium such that the reaction medium generates shock wave by a plasma reaction as the energy is applied to the reaction medium accommodated inside the reaction space, so as to propagate shock wave to the shale rock layer.

Abstract: Provided is an impeller for a fuel pump of a vehicle capable of decreasing a magnitude of high frequency fluid noise due to high speed rotation of the impeller by upper and lower blades of impeller blades positioned between upper and lower casings of the fuel pump and coupled to a shaft of a driving motor to deliver a fuel by rotational force so as to have asymmetrical angles based on the center of a thickness of an impeller body in sucking the fuel from a fuel tank and supplying the fuel to an engine of an internal combustion engine.

Abstract: Provided is an impeller for a fuel pump of a vehicle capable of decreasing a magnitude of high frequency fluid noise due to high speed rotation of the impeller by upper and lower blades of impeller blades positioned between upper and lower casings of the fuel pump and coupled to a shaft of a driving motor to deliver a fuel by rotational force so as to have asymmetrical angles based on the center of a thickness of an impeller body in sucking the fuel from a fuel tank and supplying the fuel to an engine of an internal combustion engine.

Abstract: A liquid medium plasma discharge generating apparatus includes a main body; a power electrode, provided at one side within the main body, for receiving electric power; a diaphragm member provided within the main body, and consisting of a dielectric defining one or more holes or slits; and a liquid medium charged inside the main body, wherein a ground electrode may be further provided in the main body, opposite the power electrode with the diaphragm member therebetween, whereupon the diaphragm member is arranged contacting the ground electrode.

Abstract: The present invention relates to the new structure antenna to create the uniform large area plasma using microwave. The microwave antenna to create the plasma of present invention comprises the waveguide, main body of antenna and the coaxial structure connecting part which connects said waveguide and said main body of antenna electrically, the main body of antenna comprises the conductive block in donut shape forming multiple slots, and notches are formed between the multiple slots of the conductive block and multiple permanent magnets are inserted into the notches. The multiple slots can be formed by passing through the inside and outside of the conductive block and the multiple slots can be formed with repetitive square wave pattern.

Abstract: A generation system using a plasma gasifier, includes a plasma gasifier that combusts pulverized coal or biomass using plasma so as to generate a synthesis gas including hydrogen (H2) and carbon monoxide (CO), an impurity removing device that removes an impurity included in the generated synthesis gas, a gas storage tank in which the synthesis gas, an impurity of which has been removed by the impurity removing device, is stored, and a gas engine that combusts the synthesis gas stored in the gas storage tank so as to produce electricity.

Abstract: A liquid medium plasma discharge generating apparatus includes a main body; a power electrode, provided at one side within the main body, for receiving electric power; a diaphragm member provided within the main body, and consisting of a dielectric defining one or more holes or slits; and a liquid medium charged inside the main body, wherein a ground electrode may be further provided in the main body, opposite the power electrode with the diaphragm member therebetween, whereupon the diaphragm member is arranged contacting the ground electrode.

Abstract: The present invention relates to the new structure antenna to create the uniform large area plasma using microwave. The microwave antenna to create the plasma of present invention comprises the waveguide, main body of antenna and the coaxial structure connecting part which connects said waveguide and said main body of antenna electrically, the main body of antenna comprises the conductive block in donut shape forming multiple slots, and notches are formed between the multiple slots of the conductive block and multiple permanent magnets are inserted into the notches. The multiple slots can be formed by passing through the inside and outside of the conductive block and the multiple slots can be formed with repetitive square wave pattern.

Abstract: The present invention relates to a vertical handoff method. According to the present invention, a serving network of a mobile station is determined. Herein, the mobile station that can access a first network having relatively wide service coverage and a second network having relatively narrow service coverage in an area where service coverages of heterogeneous networks are overlapped. When accessing the serving network of the first network, it is determined whether a received signal strength received from the second network is greater than a first threshold value. In addition, a first vertical handoff is decided by using a result of prediction of a transition pattern of the received signal strength that is greater than the first threshold value. When the serving network is the second network, it is determined whether the received signal strength received from the second network is less than a second threshold value.