Patents by Inventor Bongseob YANG

Bongseob YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICES INCLUDING GATE SPACER
    Publication number: 20240038873
    Abstract: A semiconductor device includes a first active region defined on a substrate, a first gate electrode across the first active region, a first drain region in the first active region at a position adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on a side surface of the first gate electrode and extending into the undercut region.
    Type: Application
    Filed: October 9, 2023
    Publication date: February 1, 2024
    Inventors: Bongseok Suh, Daewon Kim, Beomjin Park, Sukhyung Park, Sungil Park, Jaehoon Shin, Bongseob Yang, Junggun You, Jaeyun Lee
  • Semiconductor devices including gate spacer
    Patent number: 11810964
    Abstract: A semiconductor device includes a first active region defined on a substrate, a first gate electrode across the first active region, a first drain region in the first active region at a position adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on a side surface of the first gate electrode and extending into the undercut region.
    Type: Grant
    Filed: October 1, 2020
    Date of Patent: November 7, 2023
    Inventors: Bongseok Suh, Daewon Kim, Beomjin Park, Sukhyung Park, Sungil Park, Jaehoon Shin, Bongseob Yang, Junggun You, Jaeyun Lee
  • FIELD EFFECT TRANSISTOR STRUCTURE
    Publication number: 20220328671
    Abstract: A field effect transistor structure is disclosed. The field effect transistor structure includes: a fin-shaped channel protruding from a substrate and extending in one direction; a source electrode on one side of the fin-shaped channel; a drain electrode separated from the source electrode with the fin-shaped channel therebetween; a gate insulating film surrounding side and upper surfaces of the fin-shaped channel; a gate electrode on the gate insulating film; and a two-dimensional semiconductor material layer between the gate insulating film and the gate electrode.
    Type: Application
    Filed: December 1, 2021
    Publication date: October 13, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Changhyun KIM, Hyeonjin SHIN, Minhyun LEE, Taejin CHOI, Sangwon KIM, Bongseob YANG, Eunkyu LEE
  • SEMICONDUCTOR DEVICES INCLUDING GATE SPACER
    Publication number: 20210313442
    Abstract: A semiconductor device includes a first active region defined on a substrate, a first gate electrode across the first active region, a first drain region in the first active region at a position adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on a side surface of the first gate electrode and extending into the undercut region.
    Type: Application
    Filed: October 1, 2020
    Publication date: October 7, 2021
    Inventors: Bongseok SUH, Daewon KIM, Beomjin PARK, Sukhyung PARK, Sungil PARK, Jaehoon SHIN, Bongseob YANG, Junggun YOU, Jaeyun LEE