Abstract: The mixed refrigerant composition according to embodiments of the present disclosure includes carbon dioxide (R-744), trifluoroiodomethane (R-13I1), and 1,1-difluoroethane (R-152a), wherein a sum of contents of the trifluoroiodomethane (R-13I1) and the 1,1-difluoroethane (R-152a) based on a total weight of the mixed refrigerant composition may be 60 wt. % or more and less than 100 wt. %. Accordingly, environmental pollution caused by the mixed refrigerant composition may be suppressed, and the cooling performance of the mixed refrigerant composition may be improved.

Abstract: The present disclosure relates to a method for manufacturing a spicule capable of promoting percutaneous absorption of skin improvement active ingredients and fine diamonds, a spicule manufactured thereby, and a cosmetic composition comprising the same. A spicule cosmetic composition prepared according to the present disclosure can be used in the preparation of a cosmetic composition that may have excellent percutaneous penetration efficacy and may be excellent in functionality.

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber and including a lower electrode; a source RF generator coupled to the plasma processing chamber and configured to generate a source RF signal including high states and low states in alternate manner; and a bias DC generator coupled to the lower electrode and configured to generate a bias DC signal including ON states and OFF states in alternate manner. Each ON state includes a plurality of cycles, each cycle including a first sequence of first pulses and a second sequence of second pulses, each first pulse having a first voltage level, and each second pulse having a second voltage level different from the first voltage level.

Abstract: A plasma generating apparatus includes a chamber that encloses a reaction space that is isolated from the outside; a wafer chuck disposed in a lower portion of the chamber; a plasma generation unit disposed in an upper portion of the chamber; a first radio-frequency (RF) power source that supplies RF power to the plasma generation unit; a first matching unit interposed between the first RF power source and the plasma generation unit; a second RF power source that supplies RF power to the wafer chuck; and a second matching unit interposed between the second RF power source and the wafer chuck. The first RF power source supplies a first pulse power level and a different second pulse power level at different times.