Patents by Inventor BONNIE T. CHIA
BONNIE T. CHIA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11031273Abstract: Embodiments of an electrostatic chuck are provided herein. In some embodiments an electrostatic chuck includes an electrode, a dielectric body having a disk shape and covering the electrode, the dielectric body including a central region and a peripheral region, and the dielectric body including a lower surface having a central opening and an upper surface having a first opening in the central region and a plurality of second openings in the peripheral region, wherein the upper surface includes a plurality of protrusions and a diameter of each of the plurality of second openings is greater than 25.0 mils, and gas distribution channels that extend from the lower surface to the upper surface to define a plenum within the dielectric body.Type: GrantFiled: December 7, 2018Date of Patent: June 8, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Bonnie T Chia, Ross Marshall, Tomoharu Matsushita, Cheng-Hsiung Tsai
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Patent number: 10892180Abstract: Embodiments of lift pin assemblies are provided herein. In some embodiments, a lift pin assembly includes an elongate base formed of a first material and having a first feature formed in a distal end of the base to interface with and removably support a tip; and a tip formed of a second material different than the first material and having a support surface on a first side of the tip and an opposing second side of the tip, wherein the opposing second side includes a second feature to mate with the first feature of the base to removably retain the tip on the distal end of the base.Type: GrantFiled: August 2, 2014Date of Patent: January 12, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Bonnie T. Chia, Jallepally Ravi, Manjunatha Koppa, Vinod Konda Purathe, Cheng-Hsiung Matthew Tsai, Aravind Miyar Kamath
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Patent number: 10763086Abstract: Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.Type: GrantFiled: January 8, 2018Date of Patent: September 1, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Bonnie T. Chia, Cheng-hsiung Tsai
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Publication number: 20200230782Abstract: Embodiments of methods and apparatus for cleaning contaminants from a substrate are disclosed herein. In some embodiments, a substrate cleaning apparatus includes: a substrate support to support a substrate along an edge of the substrate, wherein the substrate further includes a first side and an opposing second side having contaminants disposed on the second side; a showerhead disposed a first distance of about 1.5 mm to about 4.4 mm opposite the substrate support and facing the first side of the substrate; and one or more nozzles disposed a second distance of about 1 inch to about 2 inches beneath the substrate support to discharge a mixture of solid and gaseous carbon dioxide toward the contaminants on the second side of the substrate, and wherein the one or more nozzles have an angle of about 20 to about 40 degrees.Type: ApplicationFiled: April 2, 2020Publication date: July 23, 2020Inventors: Pulkit AGARWAL, Bonnie T. CHIA, Song-Moon SUH, Cheng-Hsiung TSAI, Dhritiman Subha KASHYAP, Xiaoxiong YUAN, Eric RIESKE
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Publication number: 20200185247Abstract: Embodiments of an electrostatic chuck are provided herein. In some embodiments an electrostatic chuck includes an electrode, a dielectric body having a disk shape and covering the electrode, the dielectric body including a central region and a peripheral region, and the dielectric body including a lower surface having a central opening and an upper surface having a first opening in the central region and a plurality of second openings in the peripheral region, wherein the upper surface includes a plurality of protrusions and a diameter of each of the plurality of second openings is greater than 25.0 mils, and gas distribution channels that extend from the lower surface to the upper surface to define a plenum within the dielectric body.Type: ApplicationFiled: December 7, 2018Publication date: June 11, 2020Inventors: BONNIE T CHIA, ROSS MARSHALL, TOMOHARU MATSUSHITA, CHENG-HSIUNG TSAI
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Publication number: 20180130644Abstract: Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.Type: ApplicationFiled: January 8, 2018Publication date: May 10, 2018Inventors: Bonnie T. CHIA, Cheng Hsiung TSAI
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Patent number: 9865437Abstract: Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.Type: GrantFiled: December 30, 2014Date of Patent: January 9, 2018Assignee: Applied Materials, Inc.Inventors: Bonnie T. Chia, Cheng-Hsiung Tsai
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Publication number: 20160322239Abstract: Embodiments of methods and apparatus for cleaning contaminants from a substrate are disclosed herein. In some embodiments, a substrate cleaning apparatus includes: a substrate support to support a substrate along an edge of the substrate, wherein the substrate further includes a first side and an opposing second side having contaminants disposed on the second side; a showerhead disposed a first distance of about 1.5 mm to about 4.4 mm opposite the substrate support and facing the first side of the substrate; and one or more nozzles disposed a second distance of about 1 inch to about 2 inches beneath the substrate support to discharge a mixture of solid and gaseous carbon dioxide toward the contaminants on the second side of the substrate, and wherein the one or more nozzles have an angle of about 20 to about 40 degrees.Type: ApplicationFiled: June 24, 2015Publication date: November 3, 2016Inventors: Pulkit AGARWAL, Bonnie T. CHIA, Song-Moon SUH, Cheng-Hsiung TSAI, Dhritiman Subha KASHYAP, Xiaoxiong YUAN, Eric RIESKE
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Publication number: 20160189936Abstract: Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.Type: ApplicationFiled: December 30, 2014Publication date: June 30, 2016Inventors: Bonnie T. CHIA, Cheng-Hsiung TSAI
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Publication number: 20150348823Abstract: Embodiments of lift pin assemblies are provided herein. In some embodiments, a lift pin assembly includes an elongate base formed of a first material and having a first feature formed in a distal end of the base to interface with and removably support a tip; and a tip formed of a second material different than the first material and having a support surface on a first side of the tip and an opposing second side of the tip, wherein the opposing second side includes a second feature to mate with the first feature of the base to removably retain the tip on the distal end of the base.Type: ApplicationFiled: August 2, 2014Publication date: December 3, 2015Inventors: BONNIE T. CHIA, JALLEPALLY RAVI, MANJUNATHA KOPPA, VINOD KONDA PURATHE, CHENG-HSIUNG MATTHEW TSAI, ARAVIND MIYAR KAMATH
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Patent number: 9147558Abstract: Shutter disks for use in process chambers are provided herein. In some embodiments, a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body.Type: GrantFiled: January 16, 2013Date of Patent: September 29, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Bonnie T. Chia, Song-Moon Suh, Cheng-Hsiung Matthew Tsai, Robert Dinsmore, Glen T. Mori
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Publication number: 20140196848Abstract: Shutter disks for use in process chambers are provided herein. In some embodiments, a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body.Type: ApplicationFiled: January 16, 2013Publication date: July 17, 2014Applicant: APPLIED MATERIALS, INC.Inventors: BONNIE T. CHIA, SONG-MOON SUH, CHENG-HSIUNG MATTHEW TSAI, ROBERT DINSMORE, GLEN T. MORI