Abstract: A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.

Abstract: A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.

Abstract: Provided is a hard mask composition for spin-coating, and more particularly, a hard mask composition including a graphene copolymer and a solvent for spin-coating. The hard mask composition according to an exemplary embodiment has an improved etching resistance, and thus, etching with an increased aspect ratio may also be performed on a mask having a smaller thickness.

Abstract: A photoresist composition comprises a photosensitive resin including a blend of a photoresist polymer and a dye resin, a photo-acid generator, and a solvent, in which an amount of the dye resin is in a range from about 20 weight percent to about 80 weight percent based on a total weight of the photosensitive resin.

Abstract: Provided is a hard mask composition for spin-coating, and more particularly, a hard mask composition including a graphene copolymer and a solvent for spin-coating. The hard mask composition according to an exemplary embodiment has an improved etching resistance, and thus, etching with an increased aspect ratio may also be performed on a mask having a smaller thickness.

Abstract: A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.

Abstract: A method of forming patterns of a semiconductor device may include forming a photoresist layer that includes a photo acid generator (PAG) and a photo base generator (PBG), generating an acid from the PAG in a first exposed portion of the photoresist layer by first-exposing the photoresist layer, and generating a base from the PBG in a second exposed portion of the photoresist layer by second-exposing a part of the first exposed portion and neutralizing the acid. The method may also include baking the photoresist layer after the first and second-exposing and deblocking the photoresist layer of the first exposed portion in which the acid is generated to form a deblocked photoresist layer, and forming a photoresist pattern by removing the deblocked photoresist layer by using a developer.

Abstract: A method of forming patterns of a semiconductor device may include forming a photoresist layer that includes a photo acid generator (PAG) and a photo base generator (PBG), generating an acid from the PAG in a first exposed portion of the photoresist layer by first-exposing the photoresist layer, and generating a base from the PBG in a second exposed portion of the photoresist layer by second-exposing a part of the first exposed portion and neutralizing the acid. The method may also include baking the photoresist layer after the first and second-exposing and deblocking the photoresist layer of the first exposed portion in which the acid is generated to form a deblocked photoresist layer, and forming a photoresist pattern by removing the deblocked photoresist layer by using a developer.

Abstract: A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.

Abstract: In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.

Abstract: In a method of forming a pattern and a method of manufacturing a capacitor using the same, a conductive layer is formed on a mold layer having an opening. A first buffer layer pattern including a polymer having a repeating unit of anthracene-methyl methacrylate and a repeating unit of alkoxyl-vinyl benzene is formed on the conductive layer in the opening. The first buffer layer pattern is baked to cross-link the polymers and form a second buffer layer pattern that is insoluble in a developing solution. The conductive layer on a top portion of the mold layer is selectively removed by using the second buffer layer pattern as an etching mask. Accordingly, a conductive pattern for a semiconductor device is formed. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

Abstract: In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.

Abstract: In a photoresist composition and a method of forming a pattern using the same, the photoresist composition includes about 0.1 to about 0.5 percent by weight of a photoacid generator including a positively charged sulfonium ion and a negatively charged sulfonate ion having a hydrophilic carboxylic group, about 4 to about 10 percent by weight of a resin, and a solvent.

Abstract: Disclosed are a siloxane compound, a photoresist composition using the same, and a method of forming a pattern, wherein the siloxane compound is having a general formula: wherein R1 is a tertiary butyl group or a 1-(tert-butoxy)ethyl group, and R2 and R3 is each independently a lower alkyl group having 1 to 4 carbon atoms.

Abstract: A method of forming a protection layer on a photoresist pattern and a method of forming a fine pattern using the same are provided. A photoresist layer may be formed on a substrate. Exposure regions and non-exposure regions may be defined in the photoresist layer by an exposure process. A reactive material layer may be formed on the photoresist layer having the exposure regions. A protection layer may be formed on the exposure regions by the reactive material layer reacting via a chemical attachment process. The non-exposure regions and the reactive material layer that remains after the reaction may be removed by a development process to form photoresist patterns. The substrate may be etched using the protection layer and the photoresist patterns as etching masks.

Abstract: In a photoresist composition for a semiconductor manufacturing process and a method of forming a photoresist pattern using the photoresist composition, the photoresist composition includes an organic dispersing agent for dispersing acid (H+). The photoresist film may have enough spaces among photosensitive polymers so that acid may be dispersed sufficiently in an exposure process. Thus, a photoresist pattern may be easily formed in a defocus region. Defects in a semiconductor device may be reduced and a productivity of the semiconductor manufacturing process may be enhanced.

Abstract: In a photoresist composition and a method of forming a pattern using the same, the photoresist composition includes about 0.1 to about 0.5 percent by weight of a photoacid generator including a positively charged sulfonium ion and a negatively charged sulfonate ion having a hydrophilic carboxylic group, about 4 to about 10 percent by weight of a resin, and a solvent.

Abstract: In a method of forming a pattern and a method of manufacturing a capacitor using the same, a conductive layer is formed on a mold layer having an opening. A first buffer layer pattern including a polymer having a repeating unit of anthracene-methyl methacrylate and a repeating unit of alkoxyl-vinyl benzene is formed on the conductive layer in the opening. The first buffer layer pattern is baked to cross-link the polymers and form a second buffer layer pattern that is insoluble in a developing solution. The conductive layer on a top portion of the mold layer is selectively removed by using the second buffer layer pattern as an etching mask. Accordingly, a conductive pattern for a semiconductor device is formed. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

Abstract: A photoresist is formed on an object layer of a semiconductor device by coating the object layer with a photoresist composition including about 7 percent to about 14 percent by weight of an inclusion complex having a ?-cyclodextrin derivative as a host and an adamantane derivative as a guest, about 0.1 percent to about 0.5 percent by weight of a photoacid generator, and a remainder of an organic solvent.

Abstract: A photoresist composition for preventing exposing failures and a method of forming a pattern using the same are disclosed. The photoresist composition preferably comprises about 0.1% to about 0.5% by weight of a photo acid generator, and about 2% to about 10% by weight of a polymer resin, the PAG including a monophenyl sulfonium compound, a triphenyl sulfonium compound or a mixture thereof. The footing phenomenon and the top loss of a pattern are sufficiently prevented.