Patents by Inventor Boo Ho Jung
Boo Ho Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9276500Abstract: A reservoir capacitor includes a first capacitor group having two or more capacitors, which are serially coupled to each other between a first power voltage supply terminal and a second power voltage supply terminal, a second capacitor group having two or more capacitors, which are serially coupled to each other between a third power voltage supply terminal and a fourth power voltage supply terminal and a connection line suitable for electrically coupling a first coupling node between the capacitors of the first capacitor group to a second coupling node between the capacitors of the second capacitor group.Type: GrantFiled: December 15, 2013Date of Patent: March 1, 2016Assignee: SK Hynix Inc.Inventors: Boo-Ho Jung, Sung-Woo Han, Ic-Su Oh, Jun-Ho Lee, Hyun-Seok Kim, Sun-Ki Cho, Tae-Hoon Kim, Ki-Chul Hong
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Patent number: 9124252Abstract: Provided is a semiconductor apparatus which includes a plurality of output buffers configured to connect a plurality of power sources, and a data noise measuring unit configured to fix an output data of a selected output buffer among the plurality of output buffers to have a specific level, measure a noise of the output data using a capacitance and control a slew rate of the plurality of output buffers based on the noise.Type: GrantFiled: December 23, 2014Date of Patent: September 1, 2015Assignee: SK Hynix Inc.Inventors: Sung Woo Han, Ic Su Oh, Jun Ho Lee, Boo Ho Jung, Sun Ki Cho, Yang Hee Kim, Tae Hoon Kim
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Publication number: 20150109041Abstract: Provided is a semiconductor apparatus which includes a plurality of output buffers configured to connect a plurality of power sources, and a data noise measuring unit configured to fix an output data of a selected output buffer among the plurality of output buffers to have a specific level, measure a noise of the output data using a capacitance and control a slew rate of the plurality of output buffers based on the noise.Type: ApplicationFiled: December 23, 2014Publication date: April 23, 2015Inventors: Sung Woo HAN, Ic Su OH, Jun Ho LEE, Boo Ho JUNG, Sun Ki CHO, Yang Hee KIM, Tae Hoon KIM
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Publication number: 20150076924Abstract: This technology provides a semiconductor device capable of controlling an equivalent series resistance (ESR) generated from decoupling capacitors. To this end, the semiconductor device may include a plurality of decoupling capacitors electrically coupled between a first wire and a second wire in parallel, and a plurality of switches coupled between common source/drain terminals of two adjacent decoupling capacitors of the plurality of decoupling capacitors and the second wire.Type: ApplicationFiled: December 16, 2013Publication date: March 19, 2015Applicant: SK hynix Inc.Inventors: Hyun-Seok KIM, Sung-Woo HAN, Ic-Su OH, Jun-Ho LEE, Boo-Ho JUNG, Sun-Ki CHO, Tae-Hoon KIM, Ki-Chul HONG
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Publication number: 20150055399Abstract: A reservoir capacitor includes a first capacitor group having two or more capacitors, which are serially coupled to each other between a first power voltage supply terminal and a second power voltage supply terminal, a second capacitor group having two or more capacitors, which are serially coupled to each other between a third power voltage supply terminal and a fourth power voltage supply terminal and a connection line suitable for electrically coupling a first coupling node between the capacitors of the first capacitor group to a second coupling node between the capacitors of the second capacitor group.Type: ApplicationFiled: December 15, 2013Publication date: February 26, 2015Applicant: SK hynix Inc.Inventors: Boo-Ho JUNG, Sung-Woo HAN, Ic-Su OH, Jun-Ho LEE, Hyun-Seok KIM, Sun-Ki CHO, Tae-Hoon KIM, Ki-Chul HONG
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Patent number: 8941406Abstract: Provided is a method for reducing output data noise of a semiconductor apparatus which includes a plurality of output buffers to output data. The method includes the steps of: driving low data to a specific output buffer among the plurality of output buffers, and driving data transiting from a high level to a low level to the other output buffers; and measuring the magnitude of data noise occurring in output data of the specific output buffer, and deciding slew rates of the plurality of output buffers based on the measurement result.Type: GrantFiled: December 19, 2012Date of Patent: January 27, 2015Assignee: SK Hynix Inc.Inventors: Sung Woo Han, Ic Su Oh, Jun Ho Lee, Boo Ho Jung, Sun Ki Cho, Yang Hee Kim, Tae Hoon Kim
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Publication number: 20140140016Abstract: A power metal mesh and a semiconductor memory device including the same are provided. As the power metal mesh configured to reduce noise coupling generated between adjacent chips disposed on an interposer, a band stop filter unit including an inductor and a capacitor coupled in parallel is disposed between the adjacent chips to effectively reduce the noise coupling of a specific frequency band generated between the adjacent chips.Type: ApplicationFiled: March 18, 2013Publication date: May 22, 2014Applicant: SK HYNIX INC.Inventors: Jun Ho LEE, Sung Woo HAN, Ic Su OH, Boo Ho JUNG, Sun Ki CHO, Yang Hee KIM, Tae Hoon KIM
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Publication number: 20140062557Abstract: Provided is a method for reducing output data noise of a semiconductor apparatus which includes a plurality of output buffers to output data. The method includes the steps of: driving low data to a specific output buffer among the plurality of output buffers, and driving data transiting from a high level to a low level to the other output buffers; and measuring the magnitude of data noise occurring in output data of the specific output buffer, and deciding slew rates of the plurality of output buffers based on the measurement result.Type: ApplicationFiled: December 19, 2012Publication date: March 6, 2014Applicant: SK HYNIX INC.Inventors: Sung Woo HAN, Ic Su OH, Jun Ho LEE, Boo Ho JUNG, Sun Ki CHO, Yang Hee KIM, Tae Hoon KIM
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Patent number: 8633568Abstract: Provided is an MCP including a plurality chips stacked therein. Each of the chips includes a plurality of inductor pads configured to transmit power or signals, and at both sides of a reference inductor pad, a first and a second inductor pads are formed to generate magnetic fluxes in different directions from each other.Type: GrantFiled: December 31, 2010Date of Patent: January 21, 2014Assignee: SK Hynix Inc.Inventors: Young Won Kim, Jun Ho Lee, Hyun Seok Kim, Boo Ho Jung, Sun Ki Cho, Yang Hee Kim
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Publication number: 20130320504Abstract: A semiconductor integrated circuit apparatus includes a semiconductor substrate, a plurality of through-silicon vias (TSVs) formed in the semiconductor substrate, and an impedance path blocking unit located between the plurality of TSVs.Type: ApplicationFiled: August 31, 2012Publication date: December 5, 2013Applicant: SK HYNIX INC.Inventors: Jun Ho LEE, Hyun Seok KIM, Boo Ho JUNG, Sun Ki CHO, Yang Hee KIM, Young Won KIM
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Patent number: 8503212Abstract: A semiconductor memory apparatus includes a plurality of banks each having a plurality of cell mats; a plurality of power lines disposed over predetermined portions of each of the plurality of banks; a column control region disposed adjacent to at least one of sides of each bank which are perpendicular to an extending direction of the power lines; and a conductive plate disposed over the column control region and electrically connected to the plurality of power lines.Type: GrantFiled: July 26, 2010Date of Patent: August 6, 2013Assignee: SK Hynix Inc.Inventors: Boo Ho Jung, Jun Ho Lee, Hyun Seok Kim, Sun Ki Cho, Yang Hee Kim, Young Won Kim
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Publication number: 20130117477Abstract: A wireless signal transmitting/receiving apparatus for a semiconductor system is disclosed The apparatus includes a serializer/deserializer (SERDES) circuit and a coupling pad. The SERDES circuit outputs a parallel input signal as a serial signal during transmission, and outputs a serial input signal as a parallel signal during reception. The coupling pad generates an inductively coupled wireless signal according to the serial signal outputted from the SERDES circuit, and provides a signal generated by inductive coupling with an external device as the serial input signal of the SERDES circuit.Type: ApplicationFiled: June 15, 2012Publication date: May 9, 2013Applicant: SK hynix, Inc.Inventors: Yang Hee KIM, Ic Su Oh, Jun Ho Lee, Hyun Seok Kim, Boo Ho Jung, Sun Ki Cho
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Publication number: 20130093490Abstract: An internal voltage generation method includes the steps of: setting first to third sections by using a reference voltage; determining to which section an internal voltage level corresponds, among the first to third sections; and generating the internal voltage by controlling a voltage pumping amount according to a section corresponding to the internal voltage level.Type: ApplicationFiled: December 21, 2011Publication date: April 18, 2013Applicant: Hynix Semiconductor Inc.Inventors: Hyun Seok KIM, Ic Su OH, Jun Ho LEE, Boo Ho JUNG, Sun Ki CHO, Yang Hee KIM
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Patent number: 8421528Abstract: A semiconductor integrated circuit includes a first voltage line to which a first ground voltage is applied, a second voltage line to which a second ground voltage is applied, a third voltage line to which a first power supply voltage is applied, and a coupling unit including a MOS transistor having a source coupled to the first voltage line, a drain coupled to the second voltage line, and a gate coupled to the third voltage line.Type: GrantFiled: April 29, 2011Date of Patent: April 16, 2013Assignee: SK Hynix Inc.Inventors: Hyun Seok Kim, Jun Ho Lee, Boo Ho Jung, Sun Ki Cho, Yang Hee Kim, Young Won Kim
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Patent number: 8405454Abstract: An output circuit of a semiconductor apparatus having two different types of decoupling capacitors is presented. The output circuit includes a first pad, a second pad, a main output unit and a decoupling capacitor region. The first and second pads are configured to respectively provide a power supply voltage and a ground voltage. The main output unit is coupled to the first and second pads. One end of the decoupling capacitor region is coupled to the first pad and the other end is coupled to the second pad. The decoupling capacitor region includes a first decoupling capacitor region spaced apart from a portion of the main output unit by a first distance, and a second decoupling capacitor region spaced apart from the main output unit by a second distance which is greater than the first distance.Type: GrantFiled: July 27, 2010Date of Patent: March 26, 2013Assignee: Hynix Semiconductor Inc.Inventors: Boo Ho Jung, Jun Ho Lee, Hyun Seok Kim, Yang Hee Kim
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Publication number: 20120248586Abstract: A semiconductor integrated circuit apparatus includes a semiconductor substrate, a plurality of signal lines, and at least one interface member. The signal lines are disposed on the semiconductor substrate. The interface member is disposed in the semiconductor substrate between the adjacent signal lines among the signal lines to pierce the semiconductor substrate.Type: ApplicationFiled: August 27, 2011Publication date: October 4, 2012Applicant: HYNIX SEMICONDUCTOR INC.Inventors: Jun Ho LEE, Hyun Seok KIM, Boo Ho JUNG, Sun Ki CHO, Yang Hee KIM, Young Won KIM
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Publication number: 20120061739Abstract: Provided are a method for fabricating a capacitor and a semiconductor device using the same. The semiconductor device includes a MOS transistor capacitor, first and second plate capacitors, and a metal interconnection. The MOS transistor capacitor is arranged between a power supply and a ground. The first and second plate capacitors are arranged between the power supply and the ground. The metal interconnection is configured to connect the first and second plate capacitors.Type: ApplicationFiled: February 24, 2011Publication date: March 15, 2012Applicant: HYNIX SEMICONDUCTOR INC.Inventors: Hyun Seok KIM, Jun Ho LEE, Boo Ho JUNG, Sun Ki CHO, Yang Hee KIM, Young Won KIM
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Publication number: 20120049260Abstract: A semiconductor device includes a MOS capacitor including a gate, a source, and a drain, a cylinder capacitor including a top electrode, a dielectric layer, and a bottom electrode, and a metal interconnection that connects the gate to the bottom electrode.Type: ApplicationFiled: August 25, 2011Publication date: March 1, 2012Applicant: HYNIX SEMICONDUCTOR INC.Inventors: Hyun Seok KIM, Jun Ho LEE, Boo Ho JUNG, Sun Ki CHO, Yang Hee KIM, Young Won KIM
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Publication number: 20120049943Abstract: A semiconductor integrated circuit includes a first voltage line to which a first ground voltage is applied, a second voltage line to which a second ground voltage is applied, a third voltage line to which a first power supply voltage is applied, and a coupling unit including a MOS transistor having a source coupled to the first voltage line, a drain coupled to the second voltage line, and a gate coupled to the third voltage line.Type: ApplicationFiled: April 29, 2011Publication date: March 1, 2012Applicant: HYNIX SEMICONDUCTOR INC.Inventors: Hyun Seok KIM, Jun Ho LEE, Boo Ho JUNG, Sun Ki CHO, Yang Hee KIM, Young Won KIM
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Publication number: 20120026807Abstract: A semiconductor memory chip includes: a driving voltage reception unit configured to receive a power supply voltage and a ground voltage; a first data driving unit configured to be supplied with the power supply voltage and the ground voltage, and drive first data to output the driven first data through a first data line; a second data driving unit configured to be supplied with the power supply voltage and the ground voltage, and drive second data to output the driven second data through a second data line; and a MOS transistor coupled between the first data line and the second data line.Type: ApplicationFiled: January 24, 2011Publication date: February 2, 2012Applicant: HYNIX SEMICONDUCTOR INC.Inventors: Hyun Seok KIM, Sung Woo HAN, Jun Ho LEE, Boo Ho JUNG, Yang Hee KIM