Abstract: Disclosed is a method of fabricating a MEMS membrane structure. The method comprises: forming a silicon oxide film dam structure on a silicon substrate; depositing an adhesive layer and then forming a sacrificial layer; depositing a surface protective film on the sacrificial layer; etching the surface protective film and the sacrificial layer, thus forming trenches of first to third rows on the silicon oxide film dam structure; depositing a support film inside of the trenches of first to third rows and on the surface protective film of the sacrificial layer, thus forming a membrane; and removing the sacrificial layer disposed inside the support film deposited inside of the trench of first row, thus forming an empty space.

Abstract: Disclosed is a method of fabricating a MEMS membrane structure. The method comprises: forming a silicon oxide film dam structure on a silicon substrate; depositing an adhesive layer and then forming a sacrificial layer; depositing a surface protective film on the sacrificial layer; etching the surface protective film and the sacrificial layer, thus forming trenches of first to third rows on the silicon oxide film dam structure; depositing a support film inside of the trenches of first to third rows and on the surface protective film of the sacrificial layer, thus forming a membrane; and removing the sacrificial layer disposed inside the support film deposited inside of the trench of first row, thus forming an empty space.

Abstract: A method for fabricating an image sensor capable of preventing a salicide layer formation on a photodiode as simultaneously as of forming the salicide layer selectively on a gate electrode closely located to a transistor which includes the steps of: forming a gate electrode on a substrate; forming an insulating spacer at lateral sides of the gate electrode; forming a photodiode in the substrate exposed at an one edge of the gate electrode; forming a floating diffusion area in the substrate exposed at the other edge of the gate electrode; forming a salicide barrier layer on the photodiode, wherein the salicide barrier layer exposes a upper surface and corners of the gate electrode; and forming a salicide layer on the exposed upper surface and the upper corners of the gate.

Abstract: The present invention provides a method for fabricating an image sensor capable of preventing a salicide layer formation on a photodiode as simultaneously as of forming the salicide layer selectively on a gate electrode closely located to a transistor. The present invention includes the steps of: forming a gate electrode on a substrate; forming an insulating spacer at lateral sides of the gate electrode; forming a photodiode in the substrate exposed at an one edge of the gate electrode; forming a floating diffusion area in the substrate exposed at the other edge of the gate electrode; forming a salicide barrier layer on the photodiode, wherein the salicide barrier layer exposes a upper surface and corners of the gate electrode; and forming a salicide layer on the exposed upper surface and the upper corners of the gate.