Patents by Inventor Boo-Yeon Choi

Boo-Yeon Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5810935
    Abstract: An apparatus for transferring a wafer in a semiconductor manufacturing process, and for carrying a wafer between a cassette and a wafer chuck without an additional tool such as a tripod. The apparatus includes: a holder capable of holding the side of the wafer; a wafer transfer assembly including an actuator of the holder and a detector that detects a malfunction of the holder; and a process reactor having a vacuum exhaust port installed under a wafer chuck so as to guide gas in an axially-symmetric flow pattern. The holder grasps the rounded side of a wafer. Removal of additional tools makes the structure of an overall system more simple and an exhaust port can be installed under the reactor so as to cause processing gas to be guided in an axially-symmetric flow, resulting in an enhancement of the process uniformity.
    Type: Grant
    Filed: November 29, 1995
    Date of Patent: September 22, 1998
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Jong-Hyun Lee, Hyung-Joun Yoo, Boo-Yeon Choi, Won-Ick Jang, Ki-Ho Jang
  • Patent number: 5783749
    Abstract: A vibrating disk type micro-gyroscope and a method of manufacture thereof are disclosed. The micro-gyroscope includes a support platform for supporting a vibrating disk, the vibrating disk converting a resonance frequency into two beat frequencies, a bottom detection electrode for detecting the angular velocity of the gyroscope from a detection of the electrostatic capacitance changes between the bottom detection electrode and the vibrating disk, and an upper drive electrode for exciting the vibrating disk. The method includes the steps of: depositing an insulator layer, a polycrystalline silicon layer, the bottom detection layer, and the bottom sacrificial layer; dry etching the bottom sacrificial layer; depositing polycrystalline silicon doped with dopants; dry etching every area except the support platform and the vibrating disk; depositing an oxide upper sacrificial layer; and forming a pattern and then wet etching the upper sacrificial layer and the bottom sacrificial layer.
    Type: Grant
    Filed: July 5, 1996
    Date of Patent: July 21, 1998
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Jong-Hyun Lee, Boo-Yeon Choi, Kyung-Ho Park, Hyung-Joun Yoo