Patents by Inventor Boolean FAN

Boolean FAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming split gate memory cells with thinner tunnel oxide
    Patent number: 11488970
    Abstract: A method of forming a memory cell includes forming a first polysilicon block over an upper surface of a semiconductor substrate and having top surface and a side surface meeting at a sharp edge, forming an oxide layer with a first portion over the upper surface, a second portion directly on the side surface, and a third portion directly on the sharp edge, performing an etch that thins the oxide layer in a non-uniform manner such that the third portion is thinner than the first and second portions, performing an oxide deposition that thickens the first, second and third portions of the oxide layer, wherein after the oxide deposition, the third portion is thinner than the first and second portions, and forming a second polysilicon block having one portion directly on the first portion of the oxide layer and another portion directly on the third portion of the oxide layer.
    Type: Grant
    Filed: February 18, 2021
    Date of Patent: November 1, 2022
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Jeng-Wei Yang, Man-Tang Wu, Boolean Fan, Nhan Do
  • Method Of Forming Split Gate Memory Cells With Thinner Tunnel Oxide
    Publication number: 20220013531
    Abstract: A method of forming a memory cell includes forming a first polysilicon block over an upper surface of a semiconductor substrate and having top surface and a side surface meeting at a sharp edge, forming an oxide layer with a first portion over the upper surface, a second portion directly on the side surface, and a third portion directly on the sharp edge, performing an etch that thins the oxide layer in a non-uniform manner such that the third portion is thinner than the first and second portions, performing an oxide deposition that thickens the first, second and third portions of the oxide layer, wherein after the oxide deposition, the third portion is thinner than the first and second portions, and forming a second polysilicon block having one portion directly on the first portion of the oxide layer and another portion directly on the third portion of the oxide layer.
    Type: Application
    Filed: February 18, 2021
    Publication date: January 13, 2022
    Inventors: Jeng-Wei YANG, Man-Tang WU, Boolean FAN, Nhan DO