Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory device are configured to add variable delays to a command. The variable delays may be provided by a host device (e.g., a test equipment) using a test mode of the memory devices. Alternatively, the variable delays may be stored in nonvolatile memory (NVM) components of the memory devices. Further, mode registers of the memory devices may be set to indicate that the command is associated with the variable delays stored in the NVM components. Further, the memory devices may include delay components configured to add the variable delays to the command. Such variable delays facilitate staggered execution of the command across multiple memory devices so as to avoid (or mitigate) issues related to an instantaneous, large amount of current drawn from a power supply connected to the memory devices.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may disable ECC functions of the memory devices. When the ECC function is disabled by the host device, the memory device may deactivate various ECC periphery components coupled with an ECC circuit of the memory device to reduce power consumption of the memory device. In some cases, the memory device may disconnect an electrical power supply to the ECC periphery components. In other cases, the memory device may selectively disable the ECC periphery components or block an access command from reaching the ECC periphery components during an access operation. Further, the ECC array may be configured to replace faulty portions of a main array of the memory device when the ECC function is disabled.

Abstract: Wafer-level testing of multiple adjacent semiconductor die of a semiconductor wafer in parallel using built-in self-test circuitry for a memory (mBIST) and scribe lines that connect certain terminals of a semiconductor die to terminals of an adjacent semiconductor die. During the wafer-level testing, probe needles of a test setup connect to a single one of the multiple adjacent semiconductor die, and mBIST commands are passed from the single one of the multiple adjacent semiconductor die to one or more adjacent semiconductor die. In some examples, the scribe lines connect mBIST circuit terminals of one semiconductor die to mBIST circuit terminals of an adjacent semiconductor die. In some examples, the scribe lines connect I/O terminals of one semiconductor die to I/O terminals of an adjacent semiconductor die. The scribe lines may cross scribe regions of the wafer to connect the respective terminals of the adjacent semiconductor die.

Abstract: A memory device includes a memory array having a plurality of memory cells and a column decoder circuit that is configured to provide at least one column select signal for selecting corresponding bit-lines for memory operations on the plurality of memory cells. The memory device also includes a column select section that is configured to route the at least one column select signal such that non-adjacent bit-lines are exclusively selected during a same column select access memory operation.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory device are configured to add variable delays to a command. The variable delays may be provided by a host device (e.g., a test equipment) using a test mode of the memory devices. Alternatively, the variable delays may be stored in nonvolatile memory (NVM) components of the memory devices. Further, mode registers of the memory devices may be set to indicate that the command is associated with the variable delays stored in the NVM components. Further, the memory devices may include delay components configured to add the variable delays to the command. Such variable delays facilitate staggered execution of the command across multiple memory devices so as to avoid (or mitigate) issues related to an instantaneous, large amount of current drawn from a power supply connected to the memory devices.

Abstract: Systems, methods, and apparatuses for temperature-compensated operation of electronic devices are described. For example, an apparatus for performing voltage compensation on a sense amplifier based on temperature may include a sense amplifier control circuit coupled to the sense amplifier to provide a compensation pulse to the sense amplifier, wherein the sense amplifier operates in a voltage compensation phase during the compensation pulse. The apparatus may determine the compensation pulse responsive to a voltage compensation duration signal that is based on the operating temperature of the apparatus. The voltage compensation occurs when there is no activate command immediately before or immediately after so that compensation duration change do not happen during an activate command from the command decoder.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may disable ECC functions of the memory devices. When the ECC function is disabled by the host device, the memory device may deactivate various ECC periphery components coupled with an ECC circuit of the memory device to reduce power consumption of the memory device. In some cases, the memory device may disconnect an electrical power supply to the ECC periphery components. In other cases, the memory device may selectively disable the ECC periphery components or block an access command from reaching the ECC periphery components during an access operation. Further, the ECC array may be configured to replace faulty portions of a main array of the memory device when the ECC function is disabled.

Abstract: Systems, methods, and apparatuses for temperature-compensated operation of electronic devices are described. For example, an apparatus for performing voltage compensation on a sense amplifier based on temperature may include a sense amplifier control circuit coupled to the sense amplifier to provide a compensation pulse to the sense amplifier, wherein the sense amplifier operates in a voltage compensation phase during the compensation pulse. The apparatus may determine the compensation pulse responsive to a voltage compensation duration signal that is based on the operating temperature of the apparatus. The voltage compensation occurs when there is no activate command immediately before or immediately after so that compensation duration change do not happen during an activate command from the command decoder.

Abstract: A memory device includes a memory array having a plurality of memory cells and a column decoder circuit that is configured to provide at least one column select signal for selecting corresponding bit-lines for memory operations on the plurality of memory cells. The memory device also includes a column select section that is configured to route the at least one column select signal such that non-adjacent bit-lines are exclusively selected during a same column select access memory operation.

Abstract: A memory device includes a memory array having a plurality of memory cells and a column decoder circuit that is configured to provide at least one column select signal for selecting corresponding bit-lines for memory operations on the plurality of memory cells. The memory device also includes a column select section that is configured to route the at least one column select signal such that non-adjacent bit-lines are exclusively selected during a same column select access memory operation.

Abstract: A memory device includes a memory array having a plurality of memory cells and a column decoder circuit that is configured to provide at least one column select signal for selecting corresponding bit-lines for memory operations on the plurality of memory cells. The memory device also includes a column select section that is configured to route the at least one column select signal such that non-adjacent bit-lines are exclusively selected during a same column select access memory operation.

Abstract: Wafer-level testing of multiple adjacent semiconductor die of a semiconductor wafer in parallel using built-in self-test circuitry for a memory (mBIST) and scribe lines that connect certain terminals of a semiconductor die to terminals of an adjacent semiconductor die. During the wafer-level testing, probe needles of a test setup connect to a single one of the multiple adjacent semiconductor die, and mBIST commands are passed from the single one of the multiple adjacent semiconductor die to one or more adjacent semiconductor die. In some examples, the scribe lines connect mBIST circuit terminals of one semiconductor die to mBIST circuit terminals of an adjacent semiconductor die. In some examples, the scribe lines connect I/O terminals of one semiconductor die to I/O terminals of an adjacent semiconductor die. The scribe lines may cross scribe regions of the wafer to connect the respective terminals of the adjacent semiconductor die.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory device are configured to add variable delays to a command. The variable delays may be provided by a host device (e.g., a test equipment) using a test mode of the memory devices. Alternatively, the variable delays may be stored in nonvolatile memory (NVM) components of the memory devices. Further, mode registers of the memory devices may be set to indicate that the command is associated with the variable delays stored in the NVM components. Further, the memory devices may include delay components configured to add the variable delays to the command. Such variable delays facilitate staggered execution of the command across multiple memory devices so as to avoid (or mitigate) issues related to an instantaneous, large amount of current drawn from a power supply connected to the memory devices.

Abstract: In some examples, an inactive word line voltage control (IWVC) circuit may be configured to provide a respective subword driver associated with a memory bank of a plurality of memory banks a non-active potential from a default off-state word line voltage (VNWL) to a reduced voltage VNWL lower than the default VNWL following a time duration after activating the memory bank. The IWVC circuit may also be configured to provide the respective subword driver with the default VNWL responsive to precharging the memory bank. The IWVC circuit may include a multiplexer coupled to the subword driver and configured to provide the default VNWL or the reduced voltage VNWL to the respective subword driver responsive to a VNWL control signal. The IWVC circuit may also include a time control circuit configured to provide the VNWL control signal responsive to a clock signal and a time control signal.

Abstract: An exemplary memory includes a memory cell array configured to store a plurality of data bits each associated with a respective column plane, and an input/output circuit including a compression circuit configured to provide error data based on a comparison between a bit of the plurality of data bits received from the memory cell array and an expected value and based on a respective column plane of the memory cell array with which the bit is associated. The compression circuit is further configured to encode a column plane error code based on the error data for provision to a data terminal.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may disable ECC functions of the memory devices. When the ECC function is disabled by the host device, the memory device may deactivate various ECC periphery components coupled with an ECC circuit of the memory device to reduce power consumption of the memory device. In some cases, the memory device may disconnect an electrical power supply to the ECC periphery components. In other cases, the memory device may selectively disable the ECC periphery components or block an access command from reaching the ECC periphery components during an access operation. Further, the ECC array may be configured to replace faulty portions of a main array of the memory device when the ECC function is disabled.

Abstract: In some examples, an inactive word line voltage control (IWVC) circuit may be configured to provide a respective subword driver associated with a memory bank of a plurality of memory banks a non-active potential from a default off-state word line voltage (VNWL) to a reduced voltage VNWL lower than the default VNWL following a time duration after activating the memory bank. The IWVC circuit may also be configured to provide the respective subword driver with the default VNWL responsive to precharging the memory bank. The IWVC circuit may include a multiplexer coupled to die subword driver and configured to provide the default VNWL or the reduced voltage VNWL. to the respective subword driver responsive to a VNWL control signal. The IWVC circuit may also include a time control circuit configured to provide the VNWL control signal responsive to a clock signal and a time control signal.

Abstract: Systems, methods, and apparatuses for temperature-compensated operation of electronic devices are described. For example, an apparatus for performing voltage compensation on a sense amplifier based on temperature may include a sense amplifier control circuit coupled to the sense amplifier to provide a compensation pulse to the sense amplifier, wherein the sense amplifier operates in a voltage compensation phase during the compensation pulse. The apparatus may determine the compensation pulse responsive to a voltage compensation duration signal that is based on the operating temperature of the apparatus. The voltage compensation occurs when there is no activate command immediately before or immediately after so that compensation duration change do not happen during an activate command from the command decoder.

Abstract: Systems, methods, and apparatuses for temperature-compensated operation of electronic devices are described. For example, an apparatus for performing voltage compensation on a sense amplifier based on temperature may include a sense amplifier control circuit coupled to the sense amplifier to provide a compensation pulse to the sense amplifier, wherein the sense amplifier operates in a voltage compensation phase during the compensation pulse. The apparatus may determine the compensation pulse responsive to a voltage compensation duration signal that is based on the operating temperature of the apparatus. The voltage compensation occurs when there is no activate command immediately before or immediately after so that compensation duration change do not happen during an activate command from the command decoder.

Abstract: Various embodiments include apparatus, systems, and methods having multiple dies arranged in a stack in which the dies or a logic chip in communication with the dies stores a flag for indicating whether a threshold number of cells of the dies have failed during test operations.