Patents by Inventor BOON KHOON TEE

BOON KHOON TEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Micro light-emitting device and micro light-emitting device structure
    Patent number: 12652893
    Abstract: A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode, a first contact layer and a diffusion structure. The epitaxial structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer stacked in sequence. The second-type semiconductor layer has an outer surface relatively away from the first-type semiconductor layer. The first and second electrodes are respectively disposed on the epitaxial structure and electrically connected to the first-type and the second-type semiconductor layers. The first contact layer is disposed between the first electrode and the first-type semiconductor layer. The diffusion structure is disposed on a side of the second-type semiconductor layer away from the first-type semiconductor layer. A conductivity of the diffusion structure is less than that of the second-type semiconductor layer.
    Type: Grant
    Filed: July 17, 2023
    Date of Patent: June 9, 2026
    Assignee: PlayNitride Display Co., Ltd.
    Inventors: Boon Khoon Tee, You-Lin Peng, Chee-Yun Low, Wan-Jung Peng, Pai-Yang Tsai, Fei-Hong Chen, Ching-Liang Lin
  • MICRO LIGHT-EMITTING DEVICE AND MICRO LIGHT-EMITTING DEVICE STRUCTURE
    Publication number: 20240413277
    Abstract: A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode, a first contact layer and a diffusion structure. The epitaxial structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer stacked in sequence. The second-type semiconductor layer has an outer surface relatively away from the first-type semiconductor layer. The first and second electrodes are respectively disposed on the epitaxial structure and electrically connected to the first-type and the second-type semiconductor layers. The first contact layer is disposed between the first electrode and the first-type semiconductor layer. The diffusion structure is disposed on a side of the second-type semiconductor layer away from the first-type semiconductor layer. A conductivity of the diffusion structure is less than that of the second-type semiconductor layer.
    Type: Application
    Filed: July 17, 2023
    Publication date: December 12, 2024
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: BOON KHOON TEE, You-Lin Peng, Chee-Yun Low, Wan-Jung Peng, Pai-Yang Tsai, Ching-Liang Lin, Fei-Hong Chen