Patents by Inventor Boon Meng Seah

Boon Meng Seah has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120255586
    Abstract: An first example method and apparatus for etching and cleaning a substrate comprises device with a first manifold and a second manifold. The first manifold has a plurality of nozzles for dispensing chemicals onto the substrate. The second manifold is attached to a vacuum source and/or a dry air/gas source. A second example embodiment is a wafer cleaning device and method that uses a manifold with capillary jet nozzles and a liquid capillary jet stream to clean substrates.
    Type: Application
    Filed: April 11, 2012
    Publication date: October 11, 2012
    Applicant: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Boon Meng SEAH, Bei Chao ZHANG, Raymond JOY, Shao Beng LAW, John SUDIJONO, Liang Choo HSIA
  • Patent number: 8177993
    Abstract: An first example method and apparatus for etching and cleaning a substrate comprises device with a first manifold and a second manifold. The first manifold has a plurality of nozzles for dispensing chemicals onto the substrate. The second manifold is attached to a vacuum source and/or a dry air/gas source. A second example embodiment is a wafer cleaning device and method that uses a manifold with capillary jet nozzles and a liquid capillary jet stream to clean substrates.
    Type: Grant
    Filed: November 5, 2006
    Date of Patent: May 15, 2012
    Assignee: GLOBALFOUNDRIES Singapore Pte Ltd
    Inventors: Boon Meng Seah, Bei Chao Zhang, Raymond Joy, Shao Beng Law, John Sudijono, Liang Choo Hsia
  • Patent number: 7601607
    Abstract: An embodiment of the invention shows a process to form a damascene opening preferably without hardmask overhang or dielectric layer undercut/void. The low-k dielectric material can be sandwiched in two hardmask films to form the dielectric film through which an interconnect opening is etched. A first example embodiment comprises the following. We form a lower interconnect and an insulating layer over a semiconductor structure. We form a first hardmask a dielectric layer, and a second hardmask layer, over the lower interconnect and insulating layer. We etch a first interconnect opening in the first hardmask, the dielectric layer and the second hardmask layer. Lastly, we form an interconnect in the first interconnect opening.
    Type: Grant
    Filed: May 15, 2006
    Date of Patent: October 13, 2009
    Assignee: Chartered Semiconductor Manufacturing, Ltd.
    Inventors: Wuping Liu, Raymond Joy, Beichao Zhang, Liang Choo Hsia, Boon Meng Seah, Shyam Pal
  • Publication number: 20080105653
    Abstract: An first example method and apparatus for etching and cleaning a substrate comprises device with a first manifold and a second manifold. The first manifold has a plurality of nozzles for dispensing chemicals onto the substrate. The second manifold is attached to a vacuum source and/or a dry air/gas source. A second example embodiment is a wafer cleaning device and method that uses a manifold with capillary jet nozzles and a liquid capillary jet stream to clean substrates.
    Type: Application
    Filed: November 5, 2006
    Publication date: May 8, 2008
    Inventors: Boon Meng Seah, Bei Chao Zhang, Raymond Joy, Shao Beng Law, John Sudijono, Liang Choo Hsia