Abstract: A method of forming an optoelectronic semiconductor device involves providing an amorphous substrate. A transparent and conductive oxide layer is deposited on the amorphous substrate. The transparent and conductive oxide layer is annealed to form an annealed transparent and conductive oxide layer having a cubic-oriented and/or rhombohedral-oriented surface. A nanorod array is formed on the cubic-oriented and/or rhombohedral-oriented surface of the annealed transparent and conductive oxide layer. The annealing of the transparent conductive oxide layer and the formation of the nanorod array are performed using molecular beam epitaxy (MBE). The nanorods of the nanorod array comprise a group-III material and are non-polar.

Abstract: An underwater wireless communication network includes a first buoyant platform, including a radio-frequency communication transceiver and a wired communication transceiver, floating at a surface of a body of water. A first underwater sensor node is coupled to the first buoyant platform by at least one wire over which the first buoyant platform and the first underwater sensor node communicate. The first underwater sensor includes a wired communication transceiver to communicate with the first buoyant platform over the at least one wire. The first buoyant platform or the first underwater sensor node includes a first ambient energy collector configured to power the first buoyant platform or the first underwater sensor node. A second underwater sensor node, arranged under the body of water, includes a second ambient energy collector configured to power the second underwater sensor node.

Abstract: A compounded light-focusing optical element is configured to focus light, and the compounded light-focusing optical element includes a body having a first, flat, end face and a second, curved end face, the second, curved end face being opposite to the first, flat end face, and plural optical fibers extending through the body, from the first, flat end face to the second, curved end face. The plural optical fibers are fused to each other to form the body, and end faces of the plural optical fibers, corresponding to the second, curved end face, are pointing in different directions.

Abstract: A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

Abstract: An array of surface-emitting gain chips includes a common substrate, plural gain chips formed on the common substrate, each configured to generate a light beam, plural optical couplers, each located on a top surface of a corresponding gain chip of the plural gain chips, plural optical fibers, each connected with one end to a corresponding optical coupler of the plurality of optical couplers, an array wide optical coupler connected to another end of the plural optical fibers, and a single optical fiber connected to the array wide optical coupler and configured to output the combined light beams.

Abstract: An autonomous mining system includes a real-time digital video transmission sub-system configured to obtain video streams from underground, and transfer the video streams to a control center located above ground; and an exploration and maintenance sub-system located underground, and configured to extract a resource and bring the resource to the surface, based exclusively on commands received from the control center through the real-time digital video transmission sub-system.

Abstract: Embodiments provide novel devices, nanowires, apparatuses, artificial leaves, photoelectrodes and membranes for photochemical energy production and methods of fabricating the same. The devices, apparatuses, artificial leaves, photoelectrodes, and membranes are planar and are embedded with nanowires, including InGaN nanowires. The unique devices, artificial leaves, apparatuses photoelectrodes, and nanowire-embedded membranes provide a high degree of flexibility and incorporate a large amount of indium, making them valuable for use for hydrogen production from sunlight and water. Embodiments also provide flexible substrates combining water oxidation and hydrogen reduction in a seamless manner to enhance the overall efficiency of water splitting.

Abstract: A visible-light communication and illumination array includes a substrate and plural surface-emitting superluminescent diodes, SLDs, distributed across the substrate. A first set of SLDs of the plural SLDs generates a first light beam having substantially a first wavelength, a second set of SLDs of the plural SLDs generates a second light beam having substantially a second wavelength, and a third set of SLDs of the plural SLDs generates a third light beam having substantially a third wavelength. The array further includes a controller configured to encode at least one of the first light beam, the second light beam and the third light beam to transmit information. A combination of the first light beam, the second light beam and the third light beam produces white light.

Abstract: Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000 K with color rendering index (CRI) values reaching 83.1. Orange-emitting NWs LED are utilized as an active-phosphor, while a blue LD was used for both color mixing and optical wireless communications.

Abstract: Devices for photoelectrodes for water splitting based on indium nanowires on flexible substrates as well as methods of manufacture by transferring nanowire arrays to flexible substrates.

Abstract: A high-speed, wavelength-converting receiver that includes a housing; a high-speed, wavelength-converting layer attached to the housing and configured to absorb a first light having a first wavelength range and emit a second light having a second wavelength range, which is different from the first wavelength range; and a high-speed photodetector attached to the housing and having an active face configured to absorb the second light having the second wavelength range and generate an electrical signal. The active face of the photodetector is fully placed within the housing.

Abstract: Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and/or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and/or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided.

Abstract: A high-speed, wavelength-converting receiver that includes a housing; a high-speed, wavelength-converting layer attached to the housing and configured to absorb a first light having a first wavelength range and emit a second light having a second wavelength range, which is different from the first wavelength range; and a high-speed photodetector attached to the housing and having an active face configured to absorb the second light having the second wavelength range and generate an electrical signal. The active face of the photodetector is fully placed within the housing.

Abstract: A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

Abstract: A method of forming an optoelectronic semiconductor device involves providing an amorphous substrate. A transparent and conductive oxide layer is deposited on the amorphous substrate. The transparent and conductive oxide layer is annealed to form an annealed transparent and conductive oxide layer having a cubic-oriented and/or rhombohedral-oriented surface. A nanorod array is formed on the cubic-oriented and/or rhombohedral-oriented surface of the annealed transparent and conductive oxide layer. The annealing of the transparent conductive oxide layer and the formation of the nanorod array are performed using molecular beam epitaxy (MBE). The nanorods of the nanorod array comprise a group-III material and are non-polar.

Abstract: A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.

Abstract: A system and method providing correlated color temperature-tunable (CCT-tunable) white light using a laser diode(s) in conjunction with a III-Nitride nanowires-based LED element grown on a semi-transparent substrate. The tunability spans across yellow, amber, and red wavelengths and can be implemented by current injection. The current-dependent broad wavelength tunability enables control of wide range of CCT values (intensity, peak wavelength, and spectral coverage). The broad coverage in the yellow-amber-red color regime mimics that of a passive yellow phosphor, while the injection of current into the LED element defines an active phosphor element. The semi-transparent active phosphor element allows direct transmission of light from a laser diode(s) for achieving extreme wide tunability of CCT.

Abstract: Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000K with color rendering index (CRI) values reaching 83.1.

Abstract: Embodiments of the present disclosure describe an underwater optical communication and illumination system employing laser diodes directly encoded with data, including spectrally efficient orthogonal frequency division multiplex quadrature amplitude modulation (QAM-OFDM) data. A broadband light source may be utilized to provide both illumination to an underwater field of interest and underwater optical communication from the field of interest to a remote location.

Abstract: An optical mirror diversity receiver for a visible light communication system is provided with an array of photodiodes each having an optical-signal-receiving area, with a mirror positioned between an adjacent pair of photodiodes to preferentially redirect light toward one of the photodiodes while also blocking light that would otherwise be received at the photodiode. An angle-aided mirror diversity receiver is also provided with surfaces of the photodiodes aligned relative to the mirror to yield reductions in correlation.