Abstract: The embodiments of the present invention relate to a thermoelectric element and a thermoelectric module, and may provide a thermoelectric element and a thermoelectric module having notably improved cooling capacity (Qc) and rate of temperature change (AT) to be provided by constructing the thermoelectric element by stacking unit members, each of which comprises a semiconductor layer on a substrate, thereby lowering thermal conductivity and raising electric conductivity.

Abstract: Provided is a heat conversion device, including: a housing; a thermoelectric module received in the housing and including a thermoelectric semiconductor between substrates disposed to face each other; a first temperature conversion portion and a second temperature conversion portion disposed between the substrates, respectively; and a heat reduction portion adopted to guide a part of a fluid flowing in the housing and passing through the first temperature conversion portion to the second temperature conversion portion.

Abstract: Provided is a heat conversion device, including: a unit thermoelectric module including a first semiconductor element and a second semiconductor element; and a heat conversion module performing heat conversion by coming into contact with the unit thermoelectric module, wherein the heat conversion module includes: a heat conversion substrate coming into direct contact with at least any one of one end and the other end of the first semiconductor element or the second semiconductor element; and a radiating unit disposed on the heat conversion substrate.

Abstract: Provided is a thermoelectric material including metal oxide powder and thermoelectric powder. Thus, an internal filling rate is improved so that a Peltier effect can be maximized according to the increase of electrical conductivity and a Seebeck coefficient and the reduction of thermal conductivity, thereby enabling the improvement of the figure of merit (ZT) of a thermoelectric element.

Abstract: Provided is a thermoelectric module, including: a first substrate and a second substrate disposed to face each other; at least one unit thermoelectric element composed of a pair of semiconductor elements including a P-type semiconductor element and an N-type semiconductor element disposed in an internal area between the first substrate and the second substrate disposed to face each other and having respective ends electrically connected to each other via electrodes; and at least two kinds of sealing parts having different thermal conductivities and coated on at least one area of the internal area between the first substrate and the second substrate disposed to face each other.