Patents by Inventor Bor-Cherng CHEN

Bor-Cherng CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10186647
    Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; an electrode comprising a surface next to the semiconductor system; a contact material in the semiconductor system and in the electrode, wherein the contact material has a largest intensity at a first depth position in the electrode, and the contact material is selected from the group consisting of Be, Se, Sn, Zn, and combinations thereof; and a base material different from the base material and in the electrode.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: January 22, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Tsen-Kuei Wang, Ming-Yung Jow, Bor-Cherng Chen, Tsung-Ta Yu
  • Publication number: 20170186929
    Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; an electrode comprising a surface next to the semiconductor system; a contact material in the semiconductor system and in the electrode, wherein the contact material has a largest intensity at a first depth position in the electrode, and the contact material is selected from the group consisting of Be, Se, Sn, Zn, and combinations thereof; and a base material different from the base material and in the electrode.
    Type: Application
    Filed: March 15, 2017
    Publication date: June 29, 2017
    Inventors: Tsen-Kuei WANG, Ming-Yung JOW, Bor-Cherng CHEN, Tsung-Ta YU
  • Patent number: 9634195
    Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; and an electrode comprising a surface next to the semiconductor system and comprising a base material and a contact material different from the base material, wherein the contact material diffuses into the semiconductor system; wherein the contact material has a largest intensity at a first depth position from a SIMS spectrum, and a distance between the first depth position and the surface is not less than 500 nm.
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: April 25, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Tsen-Kuei Wang, Ming-Yung Jow, Bor-Cherng Chen, Tsung-Ta Yu
  • Publication number: 20160155903
    Abstract: A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; and an electrode comprising a surface next to the semiconductor system and comprising a base material and a contact material different from the base material, wherein the contact material diffuses into the semiconductor system; wherein the contact material has a largest intensity at a first depth position from a SIMS spectrum, and a distance between the first depth position and the surface is not less than 500 nm.
    Type: Application
    Filed: February 4, 2016
    Publication date: June 2, 2016
    Inventors: Tsen-Kuei WANG, Ming-Yung JOW, Bor-Cherng CHEN, Tsung-Ta YU
  • Patent number: 9287459
    Abstract: A light-emitting device comprises: a light-emitting semiconductor stack; and an electrode on the light-emitting semiconductor stack comprising a base material and a contact material different from the base material and capable of forming an ohmic contact with semiconductor material; wherein the contact material is distributed over a part of the light-emitting device and has a largest concentration in the electrode.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: March 15, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Tsen-Kuei Wang, Ming-Yung Jow, Bor-Cherng Chen, Tsung-Ta Yu
  • Publication number: 20150236204
    Abstract: A light-emitting device comprises: a light-emitting semiconductor stack; and an electrode on the light-emitting semiconductor stack comprising a base material and a contact material different from the base material and capable of forming an ohmic contact with semiconductor material; wherein the contact material is distributed over a part of the light-emitting device and has a largest concentration in the electrode.
    Type: Application
    Filed: February 14, 2014
    Publication date: August 20, 2015
    Applicant: Epistar Corporation
    Inventors: Tsen-Kuei WANG, Ming-Yung JOW, Bor-Cherng CHEN, Tsung-Ta YU