Patents by Inventor Bor-Jou Lin

Bor-Jou Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250093211
    Abstract: A lateral-bipolar junction transistor (BJT) including a semiconductor substrate, an insulator region disposed on the semiconductor substrate, and a well region comprising a well semiconductor of a first conductivity type disposed over the insulator region. An emitter region of a second conductivity type is disposed in the well region, and at least one collector region of a second conductivity type is disposed in the well region. A T shaped, Pi shaped or H shaped gate and gate oxide layer includes a gate portion extending between the emitter region and one or more collector regions, and a base is disposed underneath the gate portion. In other embodiments, a metal oxide semiconductor (MOS) transistor-based circuit similarly employs a compact Pi or H shaped gate and gate oxide layer.
    Type: Application
    Filed: September 20, 2023
    Publication date: March 20, 2025
    Inventors: Wei-Jen Chang, Bor-Jou Lin, Hung-Han Lin, Chung-Shih Chiang