Abstract: A semiconductor process includes the following steps. A wafer on a pedestal is provided. The pedestal is lifted to approach a heating source and an etching process is performed on the wafer. An annealing process is performed on the wafer by the heating source. In another way, a wafer on a pedestal, and a heating source on a same side of the wafer as the pedestal are provided. An etching process is performed on the wafer by setting the temperature difference between the heating source and the pedestal larger than 180° C.

Abstract: A method for fabricating a semiconductor device is provided. The method includes the following steps. Firstly, a substrate having a nitride layer and a platinum (Pt)-containing nickel (Ni)-semiconductor compound layer is provided. Then the nitride layer and the Pt are removed in situ with a chemical solution including a sulfuric acid component and a phosphoric acid component.

Abstract: A manufacturing method of a semiconductor device comprises the following steps. First, a substrate is provided, at least one fin structure is formed on the substrate, and a metal layer is then deposited on the fin structure to form a salicide layer. After depositing the metal layer, the metal layer is removed but no RTP is performed before the metal layer is removed. Then a RTP is performed after the metal layer is removed.

Abstract: A method for fabricating a semiconductor device is provided. The method includes the following steps. Firstly, a substrate having a nitride layer and a platinum (PO-containing nickel (Ni)-semiconductor compound layer is provided. Then the nitride layer and the Pt are removed in situ with a chemical solution including a sulfuric acid component and a phosphoric acid component.

Abstract: A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process.

Abstract: A manufacturing method of a semiconductor device comprises the following steps. First, a substrate is provided, at least one fin structure is formed on the substrate, and a metal layer is then deposited on the fin structure to form a salicide layer. After depositing the metal layer, the metal layer is removed but no RTP is performed before the metal layer is removed. Then a RTP is performed after the metal layer is removed.

Abstract: A semiconductor process includes the following steps. A wafer on a pedestal is provided. The pedestal is lifted to approach a heating source and an etching process is performed on the wafer. An annealing process is performed on the wafer by the heating source. In another way, a wafer on a pedestal, and a heating source on a same side of the wafer as the pedestal are provided. An etching process is performed on the wafer by setting the temperature difference between the heating source and the pedestal larger than 180° C.

Abstract: A salicide process is described. A substrate having thereon an insulating layer and a silicon-based region is provided. A nickel-containing metal layer is formed on the substrate. A first anneal process is performed to form a nickel-rich silicide layer on the silicon-based region. The remaining nickel-containing metal layer is stripped. A thermal recovery process is performed at a temperature of 150-250° C. for a period longer than 5 minutes. A second anneal process is performed to change the phase of the nickel-rich silicide layer and form a low-resistivity mononickel silicide layer.

Abstract: A semiconductor process includes the following steps. An interdielectric layer is formed on a substrate and the interdielectric layer has a first recess and a second recess. A metal layer is formed to cover the surface of the interdielectric layer, the first recess and the second recess. Partially fills a sacrificed material into the first recess and the second recess so that a portion of the metal layer in each of the recesses is respectively covered. The uncovered metal layer in each of the recesses is removed. The sacrificed material is removed. An etching process is performed to remove the remaining metal layer in the first recess and reserve the remaining metal layer in the second recess.

Abstract: A manufacturing method of a semiconductor device comprises the following steps. First, a substrate is provided, at least one fin structure is formed on the substrate, and a metal layer is then deposited on the fin structure to form a salicide layer. After depositing the metal layer, the metal layer is removed but no RTP is performed before the metal layer is removed. Then a RTP is performed after the metal layer is removed.

Abstract: A salicide process is described. A substrate having thereon an insulating layer and a silicon-based region is provided. A nickel-containing metal layer is formed on the substrate. A first anneal process is performed to form a nickel-rich silicide layer on the silicon-based region. The remaining nickel-containing metal layer is stripped. A thermal recovery process is performed at a temperature of 150-250° C. for a period longer than 5 minutes. A second anneal process is performed to change the phase of the nickel-rich silicide layer and form a low-resistivity mononickel silicide layer.

Abstract: The present invention provides a method for forming a salicide layer. First, a metal-atom-containing layer is formed on a substrate, a first rapid thermal process (RTP) is then performed to the metal-atom-containing layer to form a transitional salicide layer on a specific region. The metal-atom-containing layer is then removed, a thermal conductive layer is formed on the surface of the transitional salicide layer, and a second RTP is performed on the transitional salicide layer.

Abstract: A manufacturing method of a semiconductor device comprises the following steps. First, a substrate is provided, at least one fin structure is formed on the substrate, and a metal layer is then deposited on the fin structure to form a salicide layer. After depositing the metal layer, the metal layer is removed but no RTP is performed before the metal layer is removed. Then a RTP is performed after the metal layer is removed.

Abstract: A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process.

Abstract: A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process.

Abstract: The invention provides a supporting substrate and method for fabricating the same. The supporting substrate includes: a substrate; a first surface metal layer formed on the substrate, wherein the first surface metal layer has a first opening; a second surface metal layer formed on the substrate and disposed oppositely to the first surface metal layer, wherein the substrate has a through hole, and the through hole is formed along the first opening to expose the second surface metal layer; a protective layer formed on the first surface metal layer and the second surface metal layer, wherein the protective layer has a second opening which exposes the through hole; and a conductive bump formed in the through hole, the first opening and the second opening, wherein the conductive bump is electrically connected to the second surface metal layer.

Abstract: A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process.

Abstract: A semiconductor process includes the following steps. An interdielectric layer is formed on a substrate and the interdielectric layer has a first recess and a second recess. A metal layer is formed to cover the surface of the interdielectric layer, the first recess and the second recess. Partially fills a sacrificed material into the first recess and the second recess so that a portion of the metal layer in each of the recesses is respectively covered. The uncovered metal layer in each of the recesses is removed. The sacrificed material is removed. An etching process is performed to remove the remaining metal layer in the first recess and reserve the remaining metal layer in the second recess.

Abstract: The invention provides a supporting substrate and method for fabricating the same. The supporting substrate includes: a substrate; a first surface metal layer formed on the substrate, wherein the first surface metal layer has a first opening; a second surface metal layer formed on the substrate and disposed oppositely to the first surface metal layer, wherein the substrate has a through hole, and the through hole is formed along the first opening to expose the second surface metal layer; a protective layer formed on the first surface metal layer and the second surface metal layer, wherein the protective layer has a second opening which exposes the through hole; and a conductive bump formed in the through hole, the first opening and the second opening, wherein the conductive bump is electrically connected to the second surface metal layer.